Items where Author is "Smith, AJ"

Article

Rajabali, MM, Bissell, ML, De Schepper, S, Dewolf, K, Neyens, G, Papuga, J, Lynch, KM, Billowes, J, Flanagan, KT, Procter, TJ, Smith, AJ, Cocolios, TE, Le Blanc, F, Matea, I, Verney, D, Marsh, BA, Rothe, S, Mason, PJR, Walker, PM, Wood, RT, Wendt, K, Simpson, GS and Stroke, HH (2013) A dedicated decay-spectroscopy station for the collinear resonance ionization experiment at ISOLDE Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 707 . 35 - 39. ISSN 0168-9002

Scapellato, GG, Boninelli, S, Napolitani, E, Bruno, E, Smith, AJ, Mirabella, S, Mastromatteo, M, De Salvador, D, Gwilliam, R, Spinella, C, Carnera, A and Priolo, F (2011) Self-interstitials injection in crystalline Ge induced by GeO2 nanoclusters PHYSICAL REVIEW B, 84 (2). ? - ?. ISSN 1098-0121

Smith, AJ, Gwilliam, RM, Stolojan, V, Knights, AP, Coleman, PG, Kallis, A and Yeong, SH (2009) Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates J APPL PHYS, 106 (10). ISSN 0021-8979

Wright, NM, Thomson, DJ, Litvinenko, KL, Headley, WR, Smith, AJ, Knights, AP, Deane, JHB, Gardes, FY, Mashanovich, GZ, Gwilliam, R and Reed, GT (2008) Free carrier lifetime modification for silicon waveguide based devices OPT EXPRESS, 16 (24). 19779 - 19784. ISSN 1094-4087

Sharp, JA, Smith, AJ, Webb, RP, Kirkby, KJ, Cowern, NEB, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA, Fazzini, PF and Cristiano, F (2008) Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing APPL PHYS LETT, 92 (8). ISSN 0003-6951

Bennett, NS, Cowern, NEB, Smith, AJ, Gwilliam, RM, Sealy, BJ, O'Reilly, L, McNally, PJ, Cooke, G and Kheyrandish, H (2006) Highly conductive Sb-doped layers in strained Si APPLIED PHYSICS LETTERS, 89 (18). ? - ?. ISSN 0003-6951

Abdulmalik, DA, Coleman, PG, Cowern, NEB, Smith, AJ, Sealy, BJ, Lerch, W, Paul, S and Cristiano, F (2006) Fluorine-vacancy complexes in ultrashallow B-implanted Si APPLIED PHYSICS LETTERS, 89 (5). ? - ?. ISSN 0003-6951

Smith, AJ, Cowern, NEB, Gwilliam, R, Sealy, BJ, Colombeau, B, Collart, EJH, Gennaro, S, Giubertoni, D, Bersani, M and Barozzi, M (2006) Vacancy-engineering implants for high boron activation in silicon on insulator APPLIED PHYSICS LETTERS, 88 (8). ? - ?. ISSN 0003-6951

Conference or Workshop Item

Cowern, NEB, Smith, AJ, Colombeau, B, Gwilliam, R, Sealy, BJ and Collart, EJH (2005) Understanding, modeling and optimizing vacancy engineering for stable highly boron-doped ultrashallow junctions In: IEEE International Electron Devices Meeting, 2005-12-05 - 2005-12-07, Washington, DC.