Items where Author is "Sealy, B J"

Article

Balon, F, Shannon, J M and Sealy, B J (2005) Modeling of High-Current Source-Gated Transistors in Amorphous Silicon Applied Physics Letters, 86 (7).

Alzanki, T, Gwilliam, R, Emerson, N and Sealy, B J (2004) Differential Hall Effect Profiling of Ultrashallow Junctions in Sb Implanted Silicon Applied Physics Letters, 85 (11). ISSN 00036951

Claudio, G, Kirkby, K J, Bersani, M, Low, R, Sealy, B J and Gwilliam, R (2004) Effect of the Tilt Angle on Antimony in Silicon Implanted Wafers Journal of Applied Physics, 95 (10). ISSN 00218979

Conference or Workshop Item

Smith, A J, Colombeau, B, Gwilliam, R, Collart, E, Cowern, N E B and Sealy, B J (2004) Doping and Mobility Profiles in Defect-Engineered Ultra-Shallow Junctions: Bulk and SOI

Too, P, Ahmed, S, Jakiela, R, Barcz, A, Kozanecki, A, Sealy, B J and Gwilliam, R (2003) Implant Isolation of Both n-Type InP and InGaAs by Iron Irradiation: Effect of Post-Implant Annealing Temperature In: The 11th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003..

Ahmed, S, Amirov, K, Larsson, U, Too, P, Sealy, B J and Gwilliam, R (2003) Thermal Processing Effects in Proton-Isolated N-Type GaAs Devices In: The 11th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003..

Too, P, Ahmed, S, Sealy, B J and Gwilliam, R (2002) An Effective Electrical Isolation Scheme by Iron Implantation at Different Substrate Temperatures In: SCS 2003. International Symposium on Signals, Circuits and Systems. Proceedings (Cat. No.03EX720).