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Items where Author is "Sealy, BJ"

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O'Reilly, L, Horan, K, McNally, PJ, Bennett, NS, Cowern, NEB, Lankinen, A, Sealy, BJ, Gwilliam, RM, Noakes, TCQ and Bailey, P (2008) Constraints on micro-Raman strain metrology for highly doped strained Si materials APPLIED PHYSICS LETTERS, 92 (23). ? - ?. ISSN 0003-6951

Tsang, WM, Stolojan, V, Wong, S, Linder, JKN, Sealy, BJ and Silva, SRR (2007) The structural and electron field emission properties of ion-beam-synthesised metallic-dielectric nanocomposites In: Fall Meeting of the European-Materials-Research-Society, 2006-09-04 - 2006-09-08, Warsaw Univ Technol, Warsaw, POLAND.

Tsang, WM, Stolojan, V, Sealy, BJ, Wong, SP and Silva, SRP (2007) Electron field emission properties of Co quantum dots in SiO2 matrix synthesised by ion implantation In: Joint 50th International Field Emission Symposium/19th International Vacuum Nanoelectronics Conference, 2006-07-17 - 2006-07-20, Guilin, PEOPLES R CHINA.

Tsang, WM, Stolojan, V, Sealy, BJ, Silva, SRP and Wong, SP (2007) Electron field emission properties of co quantum dots in SiO matrix synthesised by ion implantation IVNC and IFES 2006 - Technical Digest - l9th International Vacuum Nanoelectronics Conference and 50th International Field Emission Symposium. 47 - 48.

Bennett, NS, Cowern, NEB, Smith, AJ, Gwilliam, RM, Sealy, BJ, O'Reilly, L, McNally, PJ, Cooke, G and Kheyrandish, H (2006) Highly conductive Sb-doped layers in strained Si APPLIED PHYSICS LETTERS, 89 (18). ? - ?. ISSN 0003-6951

Abdulmalik, DA, Coleman, PG, Cowern, NEB, Smith, AJ, Sealy, BJ, Lerch, W, Paul, S and Cristiano, F (2006) Fluorine-vacancy complexes in ultrashallow B-implanted Si APPLIED PHYSICS LETTERS, 89 (5). ? - ?. ISSN 0003-6951

Smith, AJ, Cowern, NEB, Gwilliam, R, Sealy, BJ, Colombeau, B, Collart, EJH, Gennaro, S, Giubertoni, D, Bersani, M and Barozzi, M (2006) Vacancy-engineering implants for high boron activation in silicon on insulator APPLIED PHYSICS LETTERS, 88 (8). ? - ?. ISSN 0003-6951

Cowern, NEB, Smith, AJ, Colombeau, B, Gwilliam, R, Sealy, BJ and Collart, EJH (2005) Understanding, modeling and optimizing vacancy engineering for stable highly boron-doped ultrashallow junctions In: IEEE International Electron Devices Meeting, 2005-12-05 - 2005-12-07, Washington, DC.

Claudio, G, Boudreault, G, Jeynes, C, Sealy, BJ, Low, R, Brown, B, Alford, TL, Nastasi, M and Vella, MC (2003) Absolute dose performance of the SWIFT single wafer ion implanter In: 14th International Conference on Ion Implantation Technology, 2002-09-18 - 2002-09-27, TAOS, NM.

Claudio, G, Jeynes, C, Kirkby, KJ, Sealy, BJ, Gwilliam, R, Low, R, Brown, B, Alford, TL, Nastasi, M and Vella, MC (2003) Electrical behaviour of arsenic implanted silicon wafers at large tilt angle IIT2002: ION IMPLANTATION TECHNOLOGY, PROCEEDINGS. 614 - 617.

Silva, SRP, Forrest, RD, Shannon, JM and Sealy, BJ (1999) Electron field emission from amorphous silicon JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 17 (2). 596 - 600.

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