University of Surrey

Test tubes in the lab Research in the ATI Dance Research

Items where Author is "Sealy, B"

Up a level
Export as [feed] RSS 1.0 [feed] RSS 2.0
Group by: Item Type | No Grouping
Number of items: 80.

Article

Alzanki, T, Bennett, N, Gwilliam, R, Jeynes, C, Bailey, P, Noakes, T and Sealy, B (2014) Ion Beam Analysis for Hall Scattering Factor Measurements in Antimony Implanted Bulk and Strained Silicon JOURNAL OF ENGINEERING RESEARCH, 2 (1). pp. 121-132.

Alzanki, T, Bennett, N, Gwilliam, R, Jeynes, C, Sealy, B, Bailey, P and Noakes, T (2014) Ion beam analysis for hall scattering factor measurements in antimony implanted bulk and strained silicon Journal of Engineering Research, 2 (1). pp. 122-132.

Ali-Boucetta, H, Bensalem, R, Alleg, S, Smith, A, Gwilliam, R and Sealy, B (2009) Simulation of electrical properties in ion implanted GaAs Physics Procedia, 2 (3). pp. 797-801.

Bennett, NS, Radamson, HH, Beer, CS, Smith, AJ, Gwilliam, RM, Cowern, NEB and Sealy, BJ (2008) Enhanced n-type dopant solubility in tensile-strained Si THIN SOLID FILMS, 517 (1). pp. 331-333.

O'Reilly, L, Horan, K, McNally, PJ, Bennett, NS, Cowern, NEB, Lankinen, A, Sealy, BJ, Gwilliam, RM, Noakes, TCQ and Bailey, P (2008) Constraints on micro-Raman strain metrology for highly doped strained Si materials APPLIED PHYSICS LETTERS, 92 (23), ARTN 2.

Bennett, NS, Smith, AJ, Gwilliam, RM, Webb, RP, Sealy, BJ, Cowern, NEB, O'Reilly, L and McNally, PJ (2008) Antimony for n-type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic? JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 26 (1). pp. 391-395.

Bennett, NS, Cowern, NEB, Smith, AJ, Kah, M, Gwilliam, RM, Sealy, BJ, Noakes, TCQ, Bailey, P, Giubertoni, D and Bersani, M (2008) Differential Hall characterisation of ultrashallow doping in advanced Si-based materials Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 154-15 (1-3). pp. 229-233.

Cowern, NEB, Smith, AJ, Bennett, N, Sealy, BJ, Gwilliam, R, Webb, RP, Colombeau, B, Paul, S, Lerch, W and Pakfar, A (2008) Vacancy engineering - An ultra-low thermal budget method for high-concentration 'diffusionless' implantation doping Materials Science Forum, 573-57. pp. 295-304.

Gwilliam, R, Cowern, NEB, Colombeau, B, Sealy, B and Smith, AJ (2007) Vacancy engineering for ultra-shallow junction formation NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 261 (1-2). pp. 600-603.

Tsang, WM, Stolojan, V, Sealy, BJ, Silva, SRP and Wong, SP (2007) Electron field emission properties of co quantum dots in SiO matrix synthesised by ion implantation IVNC and IFES 2006 - Technical Digest - l9th International Vacuum Nanoelectronics Conference and 50th International Field Emission Symposium. pp. 47-48.

Bennett, NS, Cowern, NEB, Smith, AJ, Gwilliam, RM, Sealy, BJ, O'Reilly, L, McNally, PJ, Cooke, G and Kheyrandish, H (2006) Highly conductive Sb-doped layers in strained Si APPLIED PHYSICS LETTERS, 89 (18), ARTN 1.

Webb, M, Jeynes, C, Gwilliam, R, Royle, A and Sealy, B (2006) Characterising ion-cut in GaAs by Rutherford backscattering spectroscopy Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 249 (1-2). pp. 429-431.

Abdulmalik, DA, Coleman, PG, Cowern, NEB, Smith, AJ, Sealy, BJ, Lerch, W, Paul, S and Cristiano, F (2006) Fluorine-vacancy complexes in ultrashallow B-implanted Si APPLIED PHYSICS LETTERS, 89 (5), ARTN 0.

Smith, AJ, Cowern, NEB, Gwilliam, R, Sealy, BJ, Colombeau, B, Collart, EJH, Gennaro, S, Giubertoni, D, Bersani, M and Barozzi, M (2006) Vacancy-engineering implants for high boron activation in silicon on insulator APPLIED PHYSICS LETTERS, 88 (8), ARTN 0.

Bennett, NS, Smith, AJ, Beer, CS, O'Reilly, L, Colombeau, B, Dilliway, GD, Harper, R, McNally, PJ, Gwilliam, R, Cowern, NEB and Sealy, BJ (2006) Enhanced antimony activation for ultra-shallow junctions in strained silicon Doping Engineering for Device Fabrication, 912. pp. 59-64.

Smith, AJ, Cowern, NEB, Colombeau, B, Gwilliam, R, Sealy, BJ, Collart, EJH, Gennaro, S, Giubertoni, D, Bersani, M and Barozzi, M (2006) Junction stability of B doped layers in SOI formed with optimized vacancy engineering implants Ion Implantation Technology, 866. pp. 84-87.

Sealy, BJ, Smith, AJ, Alzanki, T, Bennett, N, Li, L, Jeynes, C, Colombeau, B, Collart, EJH, Emerson, NG, Gwilliam, RM and Cowern, NEB (2006) Shallow junctions in silicon via low thermal budget processing Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06. pp. 10-15.

Bennett, NS, O'Reilly, L, Smith, AJ, Gwilliam, RM, McNally, PJ, Cowern, NEB and Sealy, BJ (2006) Strain-enhanced activation of Sb ultrashallow junctions Ion Implantation Technology, 866. pp. 54-57.

Gwilliam, RM, Cowern, NEB, Colombeau, B, Sealy, B and Smith, AJ (2006) Ultra-shallow junction formation in SOI using vacancy engineering Physics of Ionized Gases, 876. pp. 181-190.

Tsang, WM, Stolojan, V, Giusca, C, Poa, CHP, Sealy, B, Silva, SRP and Wong, SP (2005) The electron field emission properties of Ag-SiO2 nanocomposite layers Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005, 2005. pp. 206-207.

Webb, M, Jeynes, C, Gwilliam, R, Too, P, Kozanecki, A, Domagala, J, Royle, A and Sealy, B (2005) The influence of the ion implantation temperature and the dose rate on smart-cut (c) in GaAs NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 240 (1-2). pp. 142-145.

Webb, M, Jeynes, C, Gwilliam, RM, Tabatabaian, Z, Royle, A and Sealy, BJ (2005) The influence of the ion implantation temperature and the flux on smart-cut (c) in GaAs NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 237 (1-2). pp. 193-196.

Balon, F, Shannon, J M and Sealy, B J (2005) Modeling of High-Current Source-Gated Transistors in Amorphous Silicon Applied Physics Letters, 86 (7).

Alzanki, T, Gwilliam, R, Emerson, NG and Sealy, BJ (2004) Low-temperature processing of antimony-implanted silicon JOURNAL OF ELECTRONIC MATERIALS, 33 (7). pp. 767-769.

Alzanki, T, Gwilliam, R, Emerson, N, Tabatabaian, Z, Jeynes, C and Sealy, BJ (2004) Concentration profiles of antimony-doped shallow layers in silicon SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 19 (6), PII S0. pp. 728-732.

Boudreault, G, Claudio, G, Jeynes, C, Low, R and Sealy, BJ (2004) Accurate calibration of the retained fluence from a versatile single wafer implanter using RBS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 217 (1). pp. 177-182.

Alzanki, T, Gwilliam, R, Emerson, N and Sealy, B J (2004) Differential Hall Effect Profiling of Ultrashallow Junctions in Sb Implanted Silicon Applied Physics Letters, 85 (11).

Claudio, G, Kirkby, K J, Bersani, M, Low, R, Sealy, B J and Gwilliam, R (2004) Effect of the Tilt Angle on Antimony in Silicon Implanted Wafers Journal of Applied Physics, 95 (10).

Claudio, G, Jeynes, C, Kirkby, KJ, Sealy, BJ, Gwilliam, R, Low, R, Brown, B, Alford, TL, Nastasi, M and Vella, MC (2003) Electrical behaviour of arsenic implanted silicon wafers at large tilt angle IIT2002: ION IMPLANTATION TECHNOLOGY, PROCEEDINGS. pp. 614-617.

Too, P, Ahmed, S, Jeynes, C, Sealy, BJ and Gwilliam, R (2002) Electrical isolation of n-type InP using MeV iron implantation at different doses and substrate temperatures ELECTRONICS LETTERS, 38 (20). pp. 1225-1226.

Emerson, NG, Gwilliam, RM and Sealy, BJ (2001) Ion beam synthesis of low resistivity contacts in amorphous silicon-based materials JOURNAL OF ELECTRONIC MATERIALS, 30 (2). L5-L7.

Emerson, NG, Gwilliam, RM, Shannon, JM, Jeynes, C, Sealy, BJ, Tsvetkova, T, Tzenov, N, Tzolov, M and Dimova-Malinovska, D (2000) Electrical and optical properties of Co+ ion implanted a-Si1-xCx : H alloys NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 160 (4). pp. 505-509.

Anguita, JV, Silva, SRP, Burden, AP, Sealy, BJ, Haq, S, Hebbron, M, Sturland, I and Pritchard, A (1999) Thermal stability of plasma deposited thin films of hydrogenated carbon-nitrogen alloys JOURNAL OF APPLIED PHYSICS, 86 (11). pp. 6276-6281.

Silva, SRP, Forrest, RD, Shannon, JM and Sealy, BJ (1999) Electron field emission from amorphous silicon JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 17 (2). pp. 596-600.

Barradas, NP, Almeida, SA, Jeynes, C, Knights, AP, Silva, SRP and Sealy, BJ (1999) RBS and ERDA study of ion beam synthesised amorphous gallium nitride NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 148 (1-4). pp. 463-467.

Gwilliam, RM, Hutchinson, S, Shannon, JM, Emerson, NG and Sealy, BJ (1998) Low resistivity layers and Schottky contacts in amorphous silicon by Co+ implantation ELECTRONICS LETTERS, 34 (25). pp. 2441-2442.

Kozanecki, A, Stepikhova, M, Lanzerstorfer, S, Jantsch, W, Palmetshofer, L, Sealy, BJ and Jeynes, C (1998) Excitation of Er3+ ions in silicon dioxide films thermally grown on silicon APPLIED PHYSICS LETTERS, 73 (20). pp. 2929-2931.

Almeida, SA, Silva, SRP, Sealy, BJ and Watts, JF (1998) Ion-beam synthesis of amorphous gallium nitride PHILOSOPHICAL MAGAZINE LETTERS, 78 (4). pp. 319-324.

Barradas, NP, Jeynes, C, Homewood, KP, Sealy, BJ and Milosavljevic, M (1998) RBS/simulated annealing analysis of silicide formation in Fe/Si systems NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 139 (1-4). pp. 235-238.

Jeynes, C, Puttick, KE, Whitmore, LC, Gartner, K, Gee, AE, Millen, DK, Webb, RP, Peel, RMA and Sealy, BJ (1996) Laterally resolved crystalline damage in single-point-diamond-turned silicon NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 118 (1-4). pp. 431-436.

Tang, YS, Zhang, J, Heasman, KC and Sealy, BJ (1989) Lattice locations of erbium implants in silicon Solid State Communications, 72 (10). pp. 991-993.

Conference or Workshop Item

Bailey, MJ, Jeynes, C, Sealy, BJ, Webb, RP and Gwilliam, RM (2010) On artefacts in the secondary ion mass spectrometry profiling of high fluence H+ implants in GaAs In: 19th International Conference on Ion Beam Analysis, 2009-09-07 - 2009-09-11, Univ Cambridge, Cambridge, ENGLAND.

Smith, AJ, Yeong, SH, Colombeau, B, Sealy, BJ and Gwilliam, RM (2008) The Formation of Ultra-Shallow Phosphorous Doped Layers Using Vacancy Engineering In: 17th International Conference on Ion Implantation Technology, 2008-06-08 - 2008-06-13, Monterey, CA.

Smith, AJ, Antwis, LD, Yeong, SH, Knights, AP, Colombeau, B, Sealy, BJ and Gwilliam, RM (2008) Junction Leakage Analysis of Vacancy Engineered Ultra-Shallow p-type Layers In: 17th International Conference on Ion Implantation Technology, 2008-06-08 - 2008-06-13, Monterey, CA.

Bennett, NS, Cowern, NEB, Kheyrandish, H, Paul, S, Lerch, W, Smith, AJ, Gwilliam, R and Sealy, BJ (2008) Vacancy engineering for highly activated 'diffusionless' boron doping in bulk silicon In: ESSDERC 2008, 2008-09-15 - 2008-09-19, Edinburgh, UK.

Tsang, WM, Adikaari, AADT, Stolojan, V, Sealy, B, Wong, SP and Silva, SRP (2007) Improving the electron emission properties of ion-beam-synthesized Ag-SiO2 nanocomposites by pulsed laser annealing

Tsang, WM, Stolojan, V, Wong, S, Linder, JKN, Sealy, BJ and Silva, SRR (2007) The structural and electron field emission properties of ion-beam-synthesised metallic-dielectric nanocomposites In: Fall Meeting of the European-Materials-Research-Society, 2006-09-04 - 2006-09-08, Warsaw Univ Technol, Warsaw, POLAND.

Tsang, WM, Stolojan, V, Sealy, BJ, Wong, SP and Silva, SRP (2007) Electron field emission properties of Co quantum dots in SiO2 matrix synthesised by ion implantation In: Joint 50th International Field Emission Symposium/19th International Vacuum Nanoelectronics Conference, 2006-07-17 - 2006-07-20, Guilin, PEOPLES R CHINA.

Tsang, WM, Stolojan, V, Giusca, C, Poa, CHP, Sealy, B, Silva, SRP and Wong, SP (2006) Electron field-emission properties of Ag-SiO2 nanocomposite layers In: 18th International Vacuum Nanoelectronics Conference, 2005-07-10 - 2005-07-14, Oxford, ENGLAND.

Alzanki, T, Gwilliam, R, Emerson, N, Smith, A, Webb, R and Sealy, BJ (2006) Electrical profiles of 20 nm junctions in Sb implanted silicon In: 14th International Conference on Ion Beam Modification of Materials (IBMM 2004), 2004-09-05 - 2004-09-10, Pacific Grove, CA.

Sharp, JA, Gwilliam, RM, Sealy, BJ, Jeynes, C, Hamilton, JJ and Kirkby, KJ (2005) Evaluation of BBr2+ and B++Br+ implants in silicon In: Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting, 2005-05-31 - 2005-06-03, Strasbourg, FRANCE.

Tsang, WM, Stolojan, V, Wong, SP, Sealy, BJ and Silva, SRP (2005) The electron field emission properties of ion beam synthesised metal-dielectric nanocomposite layers on silicon substrates In: Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting, 2005-05-31 - 2005-06-03, Strasbourg, FRANCE.

Sharp, JA, Gwilliam, RM, Sealy, BJ, Jeynes, C, Hamilton, JJ and Kirkby, KJ (2005) Comparison of elemental boron and boron halide implants into silicon In: 15th International Conference on Ion Implantation Technology, 2004-10-25 - 2004-10-27, Taipei, TAIWAN.

Cowern, NEB, Smith, AJ, Colombeau, B, Gwilliam, R, Sealy, BJ and Collart, EJH (2005) Understanding, modeling and optimizing vacancy engineering for stable highly boron-doped ultrashallow junctions In: IEEE International Electron Devices Meeting, 2005-12-05 - 2005-12-07, Washington, DC.

Smith, A J, Colombeau, B, Gwilliam, R, Collart, E, Cowern, N E B and Sealy, B J (2004) Doping and Mobility Profiles in Defect-Engineered Ultra-Shallow Junctions: Bulk and SOI

Webb, RP, Winston, SH, Gwilliam, RM, Sealy, BJ, Boudreault, G, Jeynes, C and Kirkby, KJ (2003) Comparison of boron halide, decaborane and B implants in Si from molecular dynamics simulations In: 6th International Conference on Computer Simulation of Radiation Effects in Solids, 2002-06-23 - 2002-06-27, DRESDEN, GERMANY.

Claudio, G, Boudreault, G, Jeynes, C, Sealy, BJ, Low, R, Brown, B, Alford, TL, Nastasi, M and Vella, MC (2003) Absolute dose performance of the SWIFT single wafer ion implanter In: 14th International Conference on Ion Implantation Technology, 2002-09-18 - 2002-09-27, TAOS, NM.

Zurrug, H, Mefo, J, Sealy, B, Boudreault, G, Jeynes, C, Webb, RP, Kirkby, KJ, Collart, EJH, Brown, B, Alford, TL, Nastasi, M and Vella, MC (2003) Characterization and enviromental impact of plasma products within an ion implanter In: 14th International Conference on Ion Implantation Technology, 2002-09-18 - 2002-09-27, TAOS, NM.

Gennaro, S, Sealy, BJ, Jeynes, C, Gwilliam, R, Collart, EJH and Licciardello, A (2003) Effects of carbon content and annealing conditions on the electrical activation of indium implanted silicon In: 14th International Conference on Ion Implantation Technology, 2002-09-18 - 2002-09-27, TAOS, NM.

Mefo, J, Kirkby, KJ, Sealy, BJ, Boudreault, G, Jeynes, C and Collart, EJH (2003) Elemental analysis of residual deposits in an ion implanter using IBA techniques In: 14th International Conference on Ion Implantation Technology, 2002-09-18 - 2002-09-27, TAOS, NM.

Winston, SH, Gwilliam, RM, Sealy, BJ, Boudreault, G, Jeynes, C, Webb, RP and Kirkby, KJ (2003) Evaluation of the Boron activation and depth distribution using BBr2+ implants In: 14th International Conference on Ion Implantation Technology, 2002-09-18 - 2002-09-27, TAOS, NM.

Too, P, Ahmed, S, Jakiela, R, Barcz, A, Kozanecki, A, Sealy, B J and Gwilliam, R (2003) Implant Isolation of Both n-Type InP and InGaAs by Iron Irradiation: Effect of Post-Implant Annealing Temperature In: The 11th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003..

Ahmed, S, Amirov, K, Larsson, U, Too, P, Sealy, B J and Gwilliam, R (2003) Thermal Processing Effects in Proton-Isolated N-Type GaAs Devices In: The 11th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003..

Too, P, Ahmed, S, Sealy, B J and Gwilliam, R (2002) An Effective Electrical Isolation Scheme by Iron Implantation at Different Substrate Temperatures In: SCS 2003. International Symposium on Signals, Circuits and Systems. Proceedings (Cat. No.03EX720).

Galbiati, A, Breese, MBH, Knights, AP, Sealy, B and Sellin, PJ (2001) Characterisation of a coplanar CVD diamond radiation detector In: 2nd International Workshop on Radiation Imaging Detectors, 2000-07-02 - 2000-07-06, FREIBURG, GERMANY.

Young, WT, Silva, SRP, Anguita, JV, Shannon, JM, Homewood, KP and Sealy, BJ (2000) Low temperature growth of gallium nitride In: 10th European Conference on Diamond, Diamond-Like Materials, Nitrides and Silicon Carbide (Diamond 1999), 1999-09-12 - 1999-09-17, PRAGUE, CZECH REPUBLIC.

Young, WT, Silva, SRP, Benyoucef, M, Kuball, M, Anguita, JV, Shannon, JM, Homewood, KP and Sealy, BJ (1999) The growth of gallium nitride films produced by reactive sputtering at low temperature In: 3rd International Conference on Nitride Semiconductors (ICNS 99), 1999-07-05 - 1999-07-09, MONTPELLIER, FRANCE.

Almeida, SA, Silva, SRP, Sealy, BJ and Watts, JF (1999) Bond formation in ion beam synthesised amorphous gallium nitride In: 14th International Vacuum Congress/10th International Conference on Solid Surfaces/5th International Conference on Nanometre-Scale Science and Technology/10th International Conference on Quantitative Surface Analysis, 1998-08-31 - 1998-09-04, BIRMINGHAM, ENGLAND.

Marriott, PK, Jenkin, M, Jeynes, C, Barradas, NP, Webb, RP and Sealy, BJ (1999) Rapid accurate automated analysis of complex ion beam analysis data In: 15th International Conference on the Application of Accelerators in Research and Industry, 1998-11-04 - 1998-11-07, UNIV N TEXAS, DENTON, TX.

Silva, SRP, Almeida, SA and Sealy, BJ (1999) Thin amorphous gallium nitride films formed by ion beam synthesis In: Symposium J on Ion Implantation into Semiconductors, Oxides and Ceramics, at the Spring Meeting of the European-Materials-Research-Society, 1998-06-16 - 1998-06-19, STRASBOURG, FRANCE.

Kozanecki, A, Jeynes, C, Barradas, NP, Sealy, BJ and Jantsch, W (1999) The influence of implantation and annealing conditions on optical activity of Er3+ ions in 6H SiC In: 11th International Conference on Ion Beam Modification of Materials (IBMM98), 1998-08-31 - 1998-09-04, ROYAL TROP INST, AMSTERDAM, NETHERLANDS.

Khan, RUA, Burden, AP, Silva, SRP, Shannon, JM and Sealy, BJ (1999) A study of the effects of nitrogen incorporation and annealing on the properties of hydrogenated amorphous carbon films In: Symposium K on Carbon-Based Materials for Microelectronics of the European-Materials-Research-Society-Meeting, 1998-06-16 - 1998-06-19, STRASBOURG, FRANCE.

Silva, SRP, Khan, RUA, Burden, AP, Anguita, JV, Shannon, JM, Sealy, BJ, Papworth, AJ, Kiely, CJ and Amaratunga, GAJ (1998) The microstructural dependence of the opto-electronic properties of nitrogenated hydrogenated amorphous carbon thin films In: 25th International Conference on Metallurgical Coatings and Thin Films, 1998-04-25 - 1998-05-01, SAN DIEGO, CALIFORNIA.

Sealy, B, Gwilliam, R, Shannon, J, Jeynes, C, Angelov, C and Tsvetkova, T (1998) Surface electrical conductivity of Co+-implanted a-SiC : H films In: 10th International Summer School on Vacuum, Electron and Ion Technologies (VEIT 97), 1997-09-22 - 1997-09-27, VARNA, BULGARIA.

Nejim, A, Barradas, NP, Jeynes, C, Cristiano, F, Wendler, E, Gartner, K and Sealy, BJ (1998) Residual post anneal damage of Ge and C co-implantation of Si determined by quantitative RBS-channelling In: 5th European Conference on Accelerators in Applied Research and Technology (ECAART5), 1997-08-26 - 1997-08-30, EINDHOVEN UNIV, EINDHOVEN, NETHERLANDS.

Kozanecki, A, Jeynes, C, Sealy, BJ and Nejim, A (1998) Ion beam analysis of 6H SiC implanted with erbium and ytterbium ions In: 13th International Conference on Ion Beam Analysis (IBA-13), 1997-07-27 - 1997-08-01, LISBON, PORTUGAL.

Burden, AP, Forrest, R, Silva, SRP, Sealy, BJ and Amaratunga, GAJ (1998) Field emission study of the critical parameters of amorphous carbon films deposited ion a variety of carbonaceous substrates In: Symposium on Covalently Bonded Disordered Thin-Film Materials, at the 1997 MRS Fall Meeting, 1997-12-02 - 1997-12-04, BOSTON, MA.

Kozanecki, A, Jeynes, C, Sealy, BJ, Jantsch, W, Lanzerstorfer, S, Heiss, W and Prechtl, G (1998) Photoluminescence and backscattering characterization of 6H SiC implanted with erbium and oxygen ions In: 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), 1997-08-31 - 1997-09-05, STOCKHOLM, SWEDEN.

Kozanecki, N, Jantsch, W, Heis, W, Prechtl, G, Sealy, BJ and Jeynes, C (1997) Infrared luminescence in Er and Er+O implanted 6H SiC In: XXVI International School on Physics of Semiconducting Compounds, 1997-06-06 - 1997-06-13, JASZOWIEC, POLAND.

Thesis

Sealy, B. J. (1972) Defect properties of bulk and thin film PbTe. Doctoral thesis, University of Surrey (United Kingdom)..

This list was generated on Wed Nov 22 15:04:04 2017 UTC.

Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800