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Items where Author is "Reithmaier, J"

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Number of items: 12.

Article

Marko, I P, Andreev, A D, Adams, A R, Krebs, R, Reithmaier, J P and Forchel, A (2003) The Role of Auger Recombination in InAs 1.3-/mu m Quantum-Dot Lasers Investigated Using High Hydrostatic Pressure IEEE Journal of Selected Topics in Quantum Electronics, 9 (5).

Marko, IP, Andreev, AD, Adams, AR, Krebs, R, Reithmaier, JP and Forchel, A (2003) Importance of Auger recombination in InAs 1.3 mu m quantum dot lasers ELECTRONICS LETTERS, 39 (1). pp. 58-59.

Marko, I P, Andreev, A D, Adams, A R, Krebs, R, Reithmaier, J P and Forchel, A (2003) The Importance of Auger Recombination in InAs 1.3 um Quantum Dot Lasers Electronics Letters, 58 (59).

Marko, IP, Andreev, AD, Adams, AR, Krebs, R, Reithmaier, JP and Forchel, A (2003) Auger recombination in 1.3-μm InAs/GaInAs quantum dot lasers studied using high pressure Conference on Lasers and Electro-Optics Europe - Technical Digest. p. 175.

Conference or Workshop Item

Marko, IP, Adams, AR, Sweeney, SJ, Masse, NF, Krebs, R, Reithmaier, JP, Forchel, A, Mowbray, DJ, Skolnick, MS, Liu, HY, Groom, KM, Hatori, N and Sugawara, M (2007) Band gap dependence of the recombination processes in InAs/GaAs quantum dots studied using hydrostatic pressure In: 12th International Conference on High Pressure Semiconductor Physics (HPSP-12), 2006-07-31 - 2006-08-03, Barcelona, SPAIN.

Marko, IP, Andreev, AD, Sweeney, SJ, Adams, AR, Krebs, R, Deubert, S, Reithmaier, JP, Forchel, A, Menendez, J and VanDeWalle, CG (2005) The influence of auger processes on recombination in long-wavelength InAs/GaAs quantum dots In: 27th International Conference on the Physics of Semiconductors (ICPS-27), 2004-07-26 - 2004-07-30, Flagstaff, AZ.

Lock, D, Sweeney, SJ, Adams, AR, Deubner, S, Klopf, F, Reithmaier, JP and Forchel, A (2004) Carrier leakage suppression utilising short-period superlattices in 980 nm InGaAs/GaAs quantum well lasers In: 11th International Conference on High-Pressure Semiconductor Physics (HPSP-11), 2004-08-02 - 2004-08-05, Berkeley, CA.

Marko, IP, Sweeney, SJ, Adams, AR, Jin, SR, Murdin, BN, Schwertberger, R, Somers, A, Reithmaier, JP and Forchel, A (2004) Recombination mechanisms in InAs/InP quantum dash lasers studied using high hydrostatic pressure In: 11th International Conference on High-Pressure Semiconductor Physics (HPSP-11), 2004-08-02 - 2004-08-05, Berkeley, CA.

Marko, I. P., Adams, A. R., Sweeney, S. J., Jin, S. R., Murdin, B. N., Schwertberger, R., Somers, A., Reithmaier, J. P. and Forchel, A. (2004) Experimental investigations into the thermal properties of 1.5-1.8-/spl mu/m InAs/InP quantum dash lasers

Marko, I P, Adams, A R, Sweeney, S J, Jin, S R, Murdin, B N, Schwertberger, R, Somers, A, Reithmaier, J P and Forchel, A (2004) Experimental Investigations into the Thermal Properties of 1.5-1.8&#956m InAs/InP Quantum Dash Lasers In: 2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest..

Marko, IP, Adams, AR, Sweeney, SJ, Jin, SR, Murdin, BN, Schwertberger, R, Somers, A, Reithmaier, JP and Forchel, A (2004) Experimental investigations into the thermal properties of 1.5-1.8-mu m InAs/InP quantum dash lasers In: 19th IEEE International Semiconductor Laser Conference, 2004-09-21 - 2004-09-25, Matsue, JAPAN.

Marko, IP, Andreev, AD, Adams, AR, Krebs, R, Reithmaier, JP and Forchel, A (2003) High-pressure studies of the recombination processes, threshold currents, and lasing wavelengths in InAs/GaInAs quantum dot lasers In: 10th International Conference on High Pressures in Semiconductor Physics (HPSP-X), 2002-08-05 - 2002-08-08, UNIV SURREY, GUILDFORD, ENGLAND.

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