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Items where Author is "Reeson, K"

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Geatches, RM, Reeson, KJ, Criddle, AJ, Finney, MS, Harry, MA, Webb, RP and Pearson, PJ (1994) Characterization of ion beam synthesized materials using microscope-spectrophotometry Materials Research Society Symposium Proceedings, 316. pp. 813-818.

Robinson, A. K., Reeson, K. J., Hemment, P. L. F., Thomas, N., Davis, J. R., Christensen, K. N., Marsh, C., Booker, G. R., Kilner, J. A. and Chater, R. J. (1988) Total dielectric isolation (TDI) of silicon device islands by a single O+implantation stage IEEE Proceedings of the 1988 SOS/SOI Technology Workshop.

Thomas, N. J., Davis, J. R., Reeson, K. J., Hemment, P. L. F., Keen, J., Castledine, J., Brumhead, D., Goulding, M., Alderman, J., Farr, J. P. G. and Earwaker, L. G. (1988) A comparison of fully depleted SOI-CMOS transistors in FIPOS and SIMOX substrates IEEE Proceedings of the 1988 SOS/SOI Technology Workshop.

Conference or Workshop Item

Homewood, KP, Reeson, KJ, Gwilliam, RM, Kewell, AK, Lourenco, MA, Shao, G, Chen, YL, Sharpe, JS, McKinty, CN and Butler, T (2001) Ion beam synthesized silicides: growth, characterization and devices In: 46th Spring Meeting of the Japan-Society-of-Applied-Physics, 1999 - ?, CHIBA, JAPAN.

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