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Items where Author is "Pohl, H"

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Article

Saeedi, K., Stavrias, N., Redlich, B., Riemann, H., Abrosimov, N.V., Becker, P., Pohl, H-J., Thewalt, M.L.W. and Murdin, Benedict (2018) Short lifetime components in the relaxation of boron acceptors in silicon Physical Review B, 97 (12), 125205. 125205-1 - 125205-6.

Huebers, H-W, Pavlov, SG, Lynch, SA, Greenland, T, Litvinenko, KL, Murdin, B, Redlich, B, van der Meer, AFG, Riemann, H, Abrosimov, NV, Becker, P, Pohl, H-J, Zhukavin, RK and Shastin, VN (2013) Isotope effect on the lifetime of the 2p(0) state in phosphorus-doped silicon PHYSICAL REVIEW B, 88 (3), ARTN 0.

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