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Items where Author is "Peaker, A"

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Number of items: 11.

Article

Markevich, VP, Peaker, AR, Hamilton, B, Lastovskii, SB, Murin, LI, Coutinho, J, Rayson, MJ, Briddon, PR and Svensson, BG (2014) The trivacancy and trivacancy-oxygen family of defects in silicon Solid State Phenomena, 205-20. pp. 181-190.

Coutinho, J, Markevich, VP, Peaker, AR, Hamilton, B, Lastovskii, SB, Murin, LI, Svensson, BJ, Rayson, MJ and Briddon, PR (2012) Electronic and dynamical properties of the silicon trivacancy Physical Review B - Condensed Matter and Materials Physics, 86 (17).

Markevich, VP, Peaker, AR, Hamilton, B, Lastovskii, SB, Murin, LI, Coutinho, J, Markevich, AV, Rayson, MJ, Briddon, PR and Svensson, BG (2012) Reconfigurations and diffusion of trivacancy in silicon Physica B: Condensed Matter, 407 (15). pp. 2974-2977.

Markevich, VP, Peaker, AR, Hamilton, B, Litvinov, VV, Pokotilo, YM, Lastovskii, SB, Coutinho, J, Carvalho, A, Rayson, MJ and Briddon, PR (2011) Tin-vacancy complex in germanium Journal of Applied Physics, 109 (8).

Markevich, VP, Peaker, AR, Hamilton, B, Litvinov, VV, Pokotilo, YM, Petukh, AN, Lastovskii, SB, Coutinho, J, Rayson, MJ and Briddon, PR (2011) Radiation-induced defect reactions in tin-doped Ge crystals Solid State Phenomena, 178-17. pp. 392-397.

Slotte, J, Rummukainen, M, Tuomisto, F, Markevich, VP, Peaker, AR, Jeynes, Christopher and Gwilliam, Russell (2008) Evolution of vacancy-related defects upon annealing of ion-implanted germanium PHYSICAL REVIEW B, 78 (8), ARTN 0.

Peaker, AR, Markevich, VP, Slotte, J, Rummukainen, M, Capan, I, Pivac, B, Gwilliam, R, Jeynes, C and Dobaczewski, L (2006) Understanding ion implantation defects in germanium ECS Transactions, 3 (2). pp. 67-76.

Jianqing, Wen, Evans-Freeman, J., Peaker, A. R., Zhang, J. P., Hemment, Peter L. F., Marsh, C. D. and Booker, G. R. (2000) Role of oxygen on the implantation related residual defects in silicon IEEE Proceedings of Electron Devices Meeting, Hong Kong, 2000.. pp. 112-115.

Conference or Workshop Item

Auret, FD, Peaker, AR, Markevich, VP, Dobaczewski, L and Gwilliam, RM (2006) High-resolution DLTS of vacancy-donor pairs in P-, As- and Sb-doped silicon In: 23rd International Conference on Defects in Semiconductors, 2005-07-24 - 2005-07-29, Awaji Isl, JAPAN.

Peaker, AR, Evans-Freeman, JH, Kan, PYY, Hawkins, ID, Terry, J, Jeynes, C and Rubaldo, L (2000) Vacancy-related defects in ion implanted and electron irradiated silicon In: Symposium F: Process Induced Defects in Semiconductors at the 1999 Spring Meeting of the European-Materials-Research-Society, 1999-06-01 - 1999-06-04, STRASBOURG, FRANCE.

Naveed, AT, Huda, MQ, Abd El-Rahman, KF, Hartung, J, Evans-Freeman, JH, Peaker, AR, Houghton, DC, Jeynes, C and Gillin, WP (1998) Erbium in silicon-germanium quantum wells In: Symposium on Light Emission from Silicon - Procress Towards Si-based Optoelectronics at the Spring Meeting of the European-Materials-Research-Society, 1998-06-16 - 1998-06-19, STRASBOURG, FRANCE.

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