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Items where Author is "O'Reilly, E"

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Article

O'Reilly, EP, Sweeney, SJ, Wang, S and Zide, JMO (2015) Dilute bismides and related alloys Preface SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30 (9), ARTN 09030.

Chai, GMT, Broderick, CA, O'Reilly, EP, Othaman, Z, Jin, SR, Petropoulos, JP, Zhong, Y, Dongmo, PB, Zide, JMO, Sweeney, SJ and Hosea, TJC (2015) Experimental and modelling study of InGaBiAs/InP alloys with up to 5.8% Bi, and with Delta(so) > E-g SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30 (9), ARTN 09401.

Usman, M, Broderick, CA, Batool, Z, Hild, K, Hosea, TJC, Sweeney, SJ and O'Reilly, EP (2013) Impact of alloy disorder on the band structure of compressively strained GaBixAs1-x PHYSICAL REVIEW B, 87 (11), ARTN 1.

Broderick, CA, Usman, M, O'Reilly, EP, Broderick, CA, O'Reilly, EP and Sweeney, SJ (2012) Band engineering in dilute nitride and bismide semiconductor lasers Semiconductor Science and Technology, 27 (9).

Crowley, MT, Marko, IP, Masse, NF, Andreev, AD, Tomic, S, Sweeney, SJ, O'Reilly, EP and Adams, AR (2009) The Importance of Recombination via Excited States in InAs/GaAs 1.3 mu m Quantum-Dot Lasers IEEE J SEL TOP QUANT, 15 (3). pp. 799-807.

Lindsay, A, O'Reilly, E P, Andreev, A D and Ashley, T (2008) Theory of Conduction Band Structure of InNxSb1-x and GaNxSb1-x Dilute Nitride Alloys Physical Review B, 77 (16).

Williams, D P, Andreev, A D and O'Reilly, E P (2006) Dependence of Exciton Energy on Dot Size in GaN/AlN Quantum Dots Physical Review B, 73 (24).

Williams, DP, Andreev, AD, O'Reilly, EP and Faux, DA (2005) Derivation of built-in polarization potentials in nitride-based semiconductor quantum dots PHYSICAL REVIEW B, 72 (23), ARTN 2.

Fehse, R, O'Reilly, EP, Sweeney, SJ, Adams, AR, McConville, D, Riechert, H and Geelhaar, L (2005) Investigation of carrier recombination processes and transport properties in GaInAsN/GaAs quantum wells AIP Conference Proceedings, 772. pp. 985-986.

Andreev, A D and O'Reilly, E P (2005) Optical Matrix Element in InAs/GaAs Quantum Dots: Dependence on Quantum Dot Parameters Applied Physics Letters, 87 (21).

Andreev, A D and O'Reilly, E P (2004) Theoretical Study of Auger Recombination in a GaInNAs 1.3 mu m Quantum Well Laser Structure Applied Physics Letters, 84 (11).

Barker, J A, Warburton, R J and O'Reilly, E P (2004) Electron and hole wave functions in self-assembled quantum rings Physical Review B, 69, 035327.

Tomic, S, O'Reilly, EP, Fehse, R, Sweeney, Stephen, Adams, Alfred, Andreev, Aleksey, Choulis, SA, Hosea, Thomas and Riechert, H (2003) Theoretical and experimental analysis of 1.3-mu m InGaAsN/GaAs lasers IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 9 (5). pp. 1228-1238.

O'Reilly, EP, Fahy, S, Lindsay, A, Tomić, S, Fehse, R, Adams, AR, Sweeney, SJ, Andreev, AD, Klar, PJ, Grüning, H and Riechert, H (2003) Novel electronic and optoelectronic properties of GaInNAs and related alloys OSA Trends in Optics and Photonics Series, 88. pp. 523-525.

Fehse, R, Tomic, S, Adams, AR, Sweeney, SJ, O'Reilly, EP, Andreev, A and Riechert, H (2002) A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-mu m GaInNAs-based quantum-well lasers IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 8 (4). pp. 801-810.

Jin, SR, Fehse, R, Sweeney, SJ, Knowles, G, Adams, AR, O'Reilly, EP, Reichert, H, Illek, S, Egorov, AY, Thijs, PJA, Uchida, T and Fujii, T (2002) Modal refractive index of 1.3 mu m InGaAsP, AlGaInAs and GaInNAs semiconductor lasers under high hydrostatic pressure ELECTRONICS LETTERS, 38 (7). pp. 325-327.

Tomić, S, Fehse, R, Choulis, SA, O'Reilly, EP, Adams, AR, Sweeney, SJ, Andreev, AD, Hosea, TJC and Riechert, H (2002) Experimental and theoretical analysis of the recombination processes in GaInNAs 1.3 μm Lasers Conference Digest - IEEE International Semiconductor Laser Conference. pp. 41-42.

Knowles, G, Fehse, R, Tomić, S, Sweeney, SJ, Sale, TE, Adams, AR, O'Reilly, EP, Steinle, G and Riechert, H (2002) The temperature and pressure dependence of 1.3 μm GaInNAs vertical-cavity surface emitting lasers (VCSELs) Conference Digest - IEEE International Semiconductor Laser Conference. pp. 139-140.

Fehse, R, Jin, S, Sweeney, SJ, Adams, AR, O'Reilly, EP, Riechert, H, Illek, S and Egorov, AY (2001) Evidence for large monomolecular recombination contribution to threshold current in 1.3 mu m GaInNAs semiconductor lasers ELECTRONICS LETTERS, 37 (25). pp. 1518-1520.

Murdin, B. N., Kamal-Saadi, M., Lindsay, A., O'Reilly, E. P., Adams, A. R., Nott, G. J., Crowder, J. G., Pidgeon, C. R., Bradley, I. V., Wells, J-P. R., Burke, T., Johnson, A. D. and Ashley, T. (2001) Auger recombination in long-wavelength infrared InN<i><sub>x</i></sub>Sb<i><sub>1–x</i></sub> alloys Applied Physics Letters, 1568 (2001).

Fehse, R, Sweeney, SJ, Adams, AR, O'Reilly, EP, Egorov, AY, Riechert, H and Illek, S (2001) Insights into carrier recombination processes in 1.3 mu m GaInNAs-based semiconductor lasers attained using high pressure ELECTRONICS LETTERS, 37 (2). pp. 92-93.

Sweeney, SJ, Adams, AR, O'Reilly, EP, Silver, M and Thijs, PJA (2000) Effect of auger generated hot-holes on 1.5-μm InGaAs(P)-based quantum well semiconductor lasers Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest. pp. 391-392.

Barker, J A and O'Reilly, E P (2000) Theoretical analysis of electron-hole alignment in InAs-GaAs quantum dots Physical Review B (PRB), 61 (20). pp. 13840-13851.

Fry, P W, Itskevich, I E, Mowbray, D J, Skolnick, M S, Finley, J J, Barker, J A, O'Reilly, E P, Wilson, L R, Larkin, I A, Maksym, P A, Hopkinson, M, Al-Khafaji, M, David, J P R, Cullis, A G, Hill, G and Clark, J C (2000) Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots Physical Review Letters (PRL), 84 (4). pp. 733-736.

Andreev, AD, Downes, JR, Faux, DA and O'Reilly, EP (1999) Strain distributions in quantum dots of arbitrary shape JOURNAL OF APPLIED PHYSICS, 86 (1). pp. 297-305.

Higashi, T, Sweeney, SJ, Phillips, AF, Adams, AR, O'Reilly, EP, Uchida, T and Fujii, T (1999) Experimental analysis of temperature dependence in 1.3-mu m AlGaInAs-InP strained MQW lasers IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 5 (3). pp. 413-419.

Higashi, T, Sweeney, SJ, Phillips, AF, Adams, AR, O'Reilly, EP, Uchida, T and Fujii, T (1999) Observation of reduced nonradiative current in 1.3-mu m AlGaInAs-InP strained MQW lasers IEEE PHOTONICS TECHNOLOGY LETTERS, 11 (4). pp. 409-411.

Sweeney, SJ, Phillips, AF, Adams, AR, O'Reilly, EP and Thijs, PJA (1998) Determination of the influence of Auger recombination on the threshold current of 1.3 μm and 1.5 μm InGaAs(P) strained-layer lasers and its variation with temperature Conference Digest - IEEE International Semiconductor Laser Conference. pp. 63-64.

Higashi, T, Sweeney, SJ, Phillips, AF, Adams, AR, O'Reilly, EP, Uchida, T and Fujii, T (1998) Observation of reduced non-radiative recombination current in 1.3-μm AlGaInAs/InP multiple-quantum-well lasers Conference Digest - IEEE International Semiconductor Laser Conference. pp. 61-62.

Sweeney, SJ, Phillips, AF, Adams, AR, O'Reilly, EP and Thijs, PJA (1998) The effect of temperature dependent processes on the performance of 1.5-mu m compressively strained InGaAs(P) MQW semiconductor diode lasers IEEE PHOTONICS TECHNOLOGY LETTERS, 10 (8). pp. 1076-1078.

Sweeney, SJ, Phillips, AF, Adams, AR, O'Reilly, EP, Silver, M and Thijs, PJA (1998) Transition from radiative to nonradiative recombination in 1.3-μm and 1.5-μm InGaAs(P) multiple quantum well semiconductor diode lasers Conference on Lasers and Electro-Optics Europe - Technical Digest.

McDonald, PJ and O'Reilly, EP (1989) Ultrasound speedometer Physics Education, 24 (4). pp. 237-239.

McDonald, PJ and O'Reilly, EP (1989) Vibrating-bar depth gauge Physics Education, 24 (4). pp. 239-240.

Heasman, KC, O'Reilly, EP and Adams, AR (1989) Characterization and Design of Semiconductor Lasers Using Strain NATO ASI Series, 189. pp. 279-301.

Conference or Workshop Item

Sweeney, SJ, Marko, IP, Jin, SR, Hild, K, Batool, Z, Ludewig, P, Natterman, L, Bushell, Z, Stolz, W, Volz, K, Broderick, CA, Usman, M, Harnedy, PE, O'Reilly, EP, Butkute, R, Pacebutas, V, Geizutis, A and Krotkus, A (2014) Electrically injected GaAsBi Quantum Well Lasers In: 24th IEEE International Semiconductor Laser Conference (ISLC), 2014-09-07 - 2014-09-10, Palma de Mallorca, SPAIN.

Crowley, MT, Marko, IP, Masse, NF, Andreev, AD, Sweeney, SJ, O'Reilly, EP and Adams, AR (2008) The importance of recombination via excited states in InAs/GaAs 1.3μm quantum dot lasers In: 21st ISLC 2008, 2008-09-14 - 2008-09-18, Sorento, Italy.

Williams, DP, Andreev, AD, Faux, DA and O'Reilly, EP (2004) Surface integral determination of built-in electric fields and analysis of exciton binding energies in nitride-based quantum dots In: 11th International Conference on Modulated Semiconductor Structures (MSS11), 2003-07-14 - 2003-07-18, Nara, JAPAN.

Adams, AR, Fehse, R, Tomic, S, O'Reilly, EP, Andreev, A, Knowles, G, Sale, TE, Sweeney, SJ, Steinle, G, Ramakrishnan, A and Riechert, H (2002) Characterisation of 1.3pm wavelength GaInNAs/GaAs edge-emitting and vertical-cavity surface-emitting lasers using low-temperature and high-pressure In: Conference on Asia-Pacific Optical and Wireless Communication (APOC 2002), 2002-10-15 - 2002-10-18, SHANGHAI, PEOPLES R CHINA.

Fehse, R, Jin, S, Sweeney, SJ, Adams, AR, O'Reilly, EP, Illek, S, Egorov, AY and Riechert, H (2001) The temperature dependence of the recombination processes in 1.3 mu m GaInNAs-based edge emitting lasers In: 14th Annual Meeting of the IEEE Lasers-and-Electro-Optics-Society, 2001-11-11 - 2001-11-15, SAN DIEGO, CA.

Sweeney, SJ, Adams, AR, Silver, M, O'Reilly, EP, Watling, JR, Walker, AB and Thijs, PJA (1999) Dependence of threshold current on QW position and on pressure in 1.5 mu m InGaAs(P) lasers In: 8th International Conference on High Pressure Semiconductor Physics (HPSP-VIII), 1998-08-09 - 1998-08-13, THESSALONIKI, GREECE.

Heasman, KC, O'Reilly, EP, Witchlow, GP, Batty, W and Adams, AR (1987) Proposal For A Low Threshold Current Long Wavelength Strained Layer Laser

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