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Items where Author is "Ng, JS"

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Number of items: 10.

Article

Tan, SL, Soong, WM, Green, JE, Steer, MJ, Zhang, S, Tan, LJJ, Ng, JS, Marko, IP, Sweeney, SJ, Adams, AR, Allam, J and David, JPR (2013) Experimental evaluation of impact ionization in dilute nitride GaInNAs diodes APPLIED PHYSICS LETTERS, 103 (10). ? - ?. ISSN 0003-6951

Tan, SL, Hunter, CJ, Zhang, S, Tan, LJJ, Goh, YL, Ng, JS, David, JPR, Marko, IP, Sweeney, SJ, Adams, AR and Allam, J (2012) Improved optoelectronic properties of rapid thermally annealed dilute nitride GaInNAs photodetectors Journal of Electronic Materials, 41 (12). 3393 - 3401. ISSN 0361-5235

Mohmad, AR, Bastiman, F, Hunter, CJ, Richards, R, Sweeney, SJ, Ng, JS and David, JPR (2012) Effects of rapid thermal annealing on GaAs1-xBix alloys APPLIED PHYSICS LETTERS, 101 (1). ? - ?. ISSN 0003-6951

Mohmad, AR, Bastiman, F, Hunter, CJ, Ng, JS, Sweeney, SJ and David, JPR (2011) The effect of Bi composition to the optical quality of GaAs1-xBix APPLIED PHYSICS LETTERS, 99 (4). ? - ?. ISSN 0003-6951

Mohmad, AR, Bastiman, F, Ng, JS, Sweeney, SJ and David, JPR (2011) Photoluminescence investigation of high quality GaAs1-xBix on GaAs APPLIED PHYSICS LETTERS, 98 (12). ? - ?. ISSN 0003-6951

Ng, JS, Soong, WM, Steer, MJ, Hopkinson, M, David, JPR, Chamings, J, Sweeney, SJ and Adams, AR (2007) Long wavelength bulk GaInNAs p-i-n photodiodes lattice matched to GaAs JOURNAL OF APPLIED PHYSICS, 101 (6). ? - ?. ISSN 0021-8979

Ng, JS, Soong, WM, Steer, MJ, Hopkinson, M, David, JPR, Chamings, J, Sweeney, SJ and Adams, AR (2007) Long wavelength bulk GaInNAs p-i-n photodiodes lattice matched to GaAs JOURNAL OF APPLIED PHYSICS, 101 (6). ? - ?. ISSN 0021-8979

Conference or Workshop Item

Ng, JS, Tan, SL, Goh, YL, Tan, CH, David, JPR, Allam, J, Sweeney, SJ and Adams, AR (2010) InGaAsN as absorber in APDs for 1.3 micron wavelength applications In: IPRM 2010, 2010-05-31 - 2010-06-04, Kagawa, Japan.

Tan, SL, Tan, LJJ, Goh, YL, Zhang, S, Ng, JS, David, JPR, Marko, IP, Allam, J, Sweeney, SJ and Adams, AR (2010) Reduction of dark current and unintentional background doping in InGaAsN photodetectors by ex situ annealing In: Optical Sensing and Detection, 2010-04-12 - 2010-04-15, Brussels, Belgium.

Soong, WM, Ng, JS, Steer, MJ, Hopkinson, M, David, JPR, Chamings, J, Sweeney, SJ, Adams, AR and Allam, J (2008) Dark current mechanisms in bulk GaInNAs photodiodes In: IPRM 2008, 2008-05-25 - 2008-05-29, Versailles, France.

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