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Items where Author is "Ng, J"

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Number of items: 19.

Article

Chen, SX, Lam, BCP, Hui, BPH, Ng, JCK, Mak, WWS, Guan, Y, Buchtel, EE, Tang, WCS and Lau, VCY (2015) Conceptualizing Psychological Processes in Response to Globalization: Components, Antecedents, and Consequences of Global Orientations Journal of Personality and Social Psychology.

Chen, SX, Lam, BCP, Wu, WCH, Ng, JCK, Buchtel, EE, Guan, Y and Deng, H (2015) Do People's World Views Matter? The Why and How Journal of Personality and Social Psychology.

Mohmad, AR, Bastiman, F, Hunter, CJ, Richards, RD, Sweeney, SJ, Ng, JS, David, JPR and Majlis, BY (2014) Localization effects and band gap of GaAsBi alloys PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 251 (6). pp. 1276-1281.

Tan, SL, Soong, WM, Green, JE, Steer, MJ, Zhang, S, Tan, LJJ, Ng, JS, Marko, IP, Sweeney, SJ, Adams, AR, Allam, J and David, JPR (2013) Experimental evaluation of impact ionization in dilute nitride GaInNAs diodes APPLIED PHYSICS LETTERS, 103 (10), ARTN 1.

Tan, S, Hunter, CJ, Zhang, S, Tan, LJJ, Goh, YL, Ng, JS, David, JPR, Marko, Igor, Sweeney, Stephen, Adams, Alfred and Allam, Jeremy (2012) Improved optoelectronic properties of rapid thermally annealed dilute nitride GaInNAs photodetectors Journal of Electronic Materials, 41 (12). pp. 3393-3401.

Mohmad, AR, Bastiman, F, Hunter, CJ, Richards, R, Sweeney, SJ, Ng, JS and David, JPR (2012) Effects of rapid thermal annealing on GaAs1-xBix alloys APPLIED PHYSICS LETTERS, 101 (1), ARTN 0.

Hunter, CJ, Bastiman, F, Mohmad, AR, Richards, R, Ng, JS, David, JPR and Sweeney, SJ (2012) Absorption characteristics of GaAsBi/GaAs diodes in the near-infrared IEEE Photonics Technology Letters, 24 (23). pp. 2191-2194.

Bastiman, F, Mohmad, ARB, Ng, JS, David, JPR and Sweeney, SJ (2012) Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth Journal of Crystal Growth, 338 (1). pp. 57-61.

Mohmad, AR, Bastiman, F, Ng, JS, Sweeney, SJ and David, JPR (2012) Room temperature photoluminescence intensity enhancement in GaAs 1-xBi x alloys Physica Status Solidi (C) Current Topics in Solid State Physics, 9 (2). pp. 259-261.

Mohmad, AR, Bastiman, F, Hunter, CJ, Ng, JS, Sweeney, SJ and David, JPR (2011) The effect of Bi composition to the optical quality of GaAs1-xBix APPLIED PHYSICS LETTERS, 99 (4), ARTN 0.

Tan, SL, Zhang, S, Soong, WM, Goh, YL, Tan, LJJ, Ng, JS, David, JPR, Marko, IP, Adams, AR, Sweeney, SJ and Allam, J (2011) GaInNAsSb/GaAs Photodiodes for Long-Wavelength Applications IEEE ELECTRON DEVICE LETTERS, 32 (7). pp. 919-921.

Mohmad, AR, Bastiman, F, Ng, JS, Sweeney, SJ and David, JPR (2011) Photoluminescence investigation of high quality GaAs1-xBix on GaAs APPLIED PHYSICS LETTERS, 98 (12), ARTN 1.

Ng, JS, Soong, WM, Steer, MJ, Hopkinson, M, David, JPR, Chamings, J, Sweeney, SJ and Adams, AR (2007) Long wavelength bulk GaInNAs p-i-n photodiodes lattice matched to GaAs JOURNAL OF APPLIED PHYSICS, 101 (6), ARTN 0.

Ng, JS, Soong, WM, Steer, MJ, Hopkinson, M, David, JPR, Chamings, J, Sweeney, SJ and Adams, AR (2007) Long wavelength bulk GaInNAs p-i-n photodiodes lattice matched to GaAs JOURNAL OF APPLIED PHYSICS, 101 (6), ARTN 0.

Ng, JS, Soong, WM, Steer, MJ, Hopkinson, M, David, JPR, Chamings, J, Adams, AR, Sweeney, SJ and Allam, J (2007) GaInNAs lattice-matched to GaAs for photodiodes Conference Proceedings - International Conference on Indium Phosphide and Related Materials. pp. 347-349.

Conference or Workshop Item

Ng, JS, Tan, SL, Goh, YL, Tan, CH, David, JPR, Allam, J, Sweeney, SJ and Adams, AR (2010) InGaAsN as absorber in APDs for 1.3 micron wavelength applications In: IPRM 2010, 2010-05-31 - 2010-06-04, Kagawa, Japan.

Tan, SL, Tan, LJJ, Goh, YL, Zhang, S, Ng, JS, David, JPR, Marko, IP, Allam, J, Sweeney, SJ and Adams, AR (2010) Reduction of dark current and unintentional background doping in InGaAsN photodetectors by ex situ annealing In: Optical Sensing and Detection, 2010-04-12 - 2010-04-15, Brussels, Belgium.

Tan, LJJ, Soong, WS, Tan, SL, Goh, YL, Steer, MJ, Ng, JS, David, JPR, Marko, IP, Chamings, J, Allam, J, Sweeney, SJ and Adams, AR (2009) Dark current mechanisms in InxGa1-xAs 1-yNy In: LEOS '09, 2009-10-04 - 2009-10-08, Belek-Antalya, Turkey.

Soong, WM, Ng, JS, Steer, MJ, Hopkinson, M, David, JPR, Chamings, J, Sweeney, SJ, Adams, AR and Allam, J (2008) Dark current mechanisms in bulk GaInNAs photodiodes In: IPRM 2008, 2008-05-25 - 2008-05-29, Versailles, France.

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