Items where Author is "Nejim, A."
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Vyatkin, A. F., Avrutin, V. S., Izyumskaya, N. F., Egorov, V. K., Starkov, V. V., Zinenko, V. I., Smirnova, I. A., Hemment, Peter L. F., Nejim, A., Vdovin, V. I. and Yugova, T. G. (2000) Ion beam induced strain relaxation in pseudomorphous epitaxial SiGe layers Conference on Ion Implantation Technology, 2000. . pp. 70-72.
Graouil, H., Nejim, A., Hemment, Peter L. F., Riley, L., Hall, S., Mitchell, M. and Ashburn, P. (2000) SiGe device architectures synthesised by local area Ge+ implantation-structural and electrical characterisation Conference on Ion Implantation Technology, 2000 . pp. 38-41.
Nejim, A., Cristiano, F., Knights, A. P., Barradas, N. P., Hemment, P. L. F. and Coleman, P. G. (1998) Dose rate dependence of residual defects in device grade Si/SiGe heterostructures formed by ion beam synthesis Proceedings of the 1998 International Conference on Ion Implantation Technology, 2 . pp. 692-695.
Cristiano, F., Nejim, A. and Hemment, Peter L. F. (1998) The surface proximity effect on the formation of extended defects in ion beam synthesised SiGe/Si heterostructures 1998 International Conference on Ion Implantation Technology Proceedings, 2 . pp. 913-916.
Nejim, A., Cristiano, F., Gwilliam, R. M., Hemment, P. L. F., Hope, D. A. O., Newey, J. and Houlton, M. R. (1996) Synthesis of Si/Si1-xGex/Si heterostructures for device applications using Ge+ implantation into silicon Proceedings of the 11th International Conference on Ion Implantation Technology .
Giles, L. F., Nejim, A., Marsh, C. D., Hemment, P. L. F. and Booker, G. R. (1993) Formation of oxidation induced stacking sacrificial thinning of SIMOX materials Proceedings of the 1993 International SOI Conference . pp. 54-55.
Marsh, C. D., Booker, G. R., Nejim, A., Giles, L. F., Hemment, P. L. F., Li, Y., Chater, R. J., Kilner, J. A., Wainwright, S. and Hall, S. (1992) Identification of Optimal Doses for Device Quality Thin-Film and Standard Simox Structures Formed by Low (50keV, 70keV or 90keV) or High (200keV) Energy Oxygen Implantation Proceedings of the 1992 International SOI Conference . pp. 6-8.
