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Items where Author is "Nejim, A"

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Gandhi, KK, Nejim, A, Beliatis, MJ, Mills, CA, Henley, S and Silva, SRP (2015) Simultaneous Optical and Electrical Modeling of Plasmonic Light Trapping in Thin-Film Amorphous Silicon Photovoltaic Devices Journal of Photonics for Energy, 5 (1), 057007.

Boudreault, G, Jeynes, C, Wendler, E, Nejim, A, Webb, RP and Watjen, U (2002) Accurate RBS measurement of ion implant doses in a silicon SURFACE AND INTERFACE ANALYSIS, 33 (6). pp. 478-486.

Vyatkin, A. F., Avrutin, V. S., Izyumskaya, N. F., Egorov, V. K., Starkov, V. V., Zinenko, V. I., Smirnova, I. A., Hemment, Peter L. F., Nejim, A., Vdovin, V. I. and Yugova, T. G. (2000) Ion beam induced strain relaxation in pseudomorphous epitaxial SiGe layers Conference on Ion Implantation Technology, 2000.. pp. 70-72.

Graouil, H., Nejim, A., Hemment, Peter L. F., Riley, L., Hall, S., Mitchell, M. and Ashburn, P. (2000) SiGe device architectures synthesised by local area Ge+ implantation-structural and electrical characterisation Conference on Ion Implantation Technology, 2000. pp. 38-41.

Nejim, A, Gwilliam, RM, Emerson, NG, Knights, AP, Cristiano, F, Barradas, NP and Jeynes, C (1999) Electrical behaviour associated with defect tails in germanium implanted silicon Proceedings of the International Conference on Ion Implantation Technology, 1. pp. 506-509.

Nejim, A, Jeynes, C, Zhao, Q and Muller-Steinhagen, H (1999) Ion implantation of stainless steel heater alloys for anti-fouling applications Proceedings of the International Conference on Ion Implantation Technology, 2. pp. 869-872.

Nejim, A., Cristiano, F., Knights, A. P., Barradas, N. P., Hemment, P. L. F. and Coleman, P. G. (1998) Dose rate dependence of residual defects in device grade Si/SiGe heterostructures formed by ion beam synthesis Proceedings of the 1998 International Conference on Ion Implantation Technology, 2. pp. 692-695.

Cristiano, F., Nejim, A. and Hemment, Peter L. F. (1998) The surface proximity effect on the formation of extended defects in ion beam synthesised SiGe/Si heterostructures 1998 International Conference on Ion Implantation Technology Proceedings, 2. pp. 913-916.

Nejim, A, Knights, AP, Jeynes, C, Coleman, PG and Patel, CJ (1998) Profile broadening of high dose germanium implants into (100) silicon at elevated temperatures due to channeling JOURNAL OF APPLIED PHYSICS, 83 (7). pp. 3565-3573.

Niby, MA, Li, DQ, Lourenco, MA, Nejim, A, Homewood, KP, Hemment, PLF, Ishidida, E, Current, M, Banerjee, S, Larson, L, Mehta, S, Tasch, A, Smith, TC and Romig, T (1997) The lifetime distribution of excess carriers in H+ ion implanted silicon by photoconductive frequency resolved spectroscopy ION IMPLANTATION TECHNOLOGY - 96. pp. 668-671.

Nejim, A., Cristiano, F., Gwilliam, R. M., Hemment, P. L. F., Hope, D. A. O., Newey, J. and Houlton, M. R. (1996) Synthesis of Si/Si1-xGex/Si heterostructures for device applications using Ge+ implantation into silicon Proceedings of the 11th International Conference on Ion Implantation Technology.

Giles, L. F., Nejim, A., Marsh, C. D., Hemment, P. L. F. and Booker, G. R. (1993) Formation of oxidation induced stacking sacrificial thinning of SIMOX materials Proceedings of the 1993 International SOI Conference. pp. 54-55.

Marsh, C. D., Booker, G. R., Nejim, A., Giles, L. F., Hemment, P. L. F., Li, Y., Chater, R. J., Kilner, J. A., Wainwright, S. and Hall, S. (1992) Identification of Optimal Doses for Device Quality Thin-Film and Standard Simox Structures Formed by Low (50keV, 70keV or 90keV) or High (200keV) Energy Oxygen Implantation Proceedings of the 1992 International SOI Conference. pp. 6-8.

Conference or Workshop Item

Nejim, A, Barradas, NP, Jeynes, C, Cristiano, F, Wendler, E, Gartner, K and Sealy, BJ (1998) Residual post anneal damage of Ge and C co-implantation of Si determined by quantitative RBS-channelling In: 5th European Conference on Accelerators in Applied Research and Technology (ECAART5), 1997-08-26 - 1997-08-30, EINDHOVEN UNIV, EINDHOVEN, NETHERLANDS.

Kozanecki, A, Jeynes, C, Sealy, BJ and Nejim, A (1998) Ion beam analysis of 6H SiC implanted with erbium and ytterbium ions In: 13th International Conference on Ion Beam Analysis (IBA-13), 1997-07-27 - 1997-08-01, LISBON, PORTUGAL.

Nejim, A, Jeynes, C, Webb, RP, Cowern, NEB and Patel, CJ (1997) Influence of dynamic annealing on the depth distribution of germanium implanted in (100) silicon at elevated temperatures In: Symposium on Defects and Diffusion in Silicon Processing, 1997-04-01 - 1997-04-04, SAN FRANCISCO, CA.

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