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Items where Author is "McNally, P"

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Number of items: 8.

Article

O'Reilly, L, Horan, K, McNally, PJ, Bennett, NS, Cowern, NEB, Lankinen, A, Sealy, BJ, Gwilliam, RM, Noakes, TCQ and Bailey, P (2008) Constraints on micro-Raman strain metrology for highly doped strained Si materials APPLIED PHYSICS LETTERS, 92 (23), ARTN 2.

Bennett, NS, Smith, AJ, Gwilliam, RM, Webb, RP, Sealy, BJ, Cowern, NEB, O'Reilly, L and McNally, PJ (2008) Antimony for n-type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic? JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 26 (1). pp. 391-395.

Bennett, NS, Cowern, NEB, Smith, AJ, Gwilliam, RM, Sealy, BJ, O'Reilly, L, McNally, PJ, Cooke, G and Kheyrandish, H (2006) Highly conductive Sb-doped layers in strained Si APPLIED PHYSICS LETTERS, 89 (18), ARTN 1.

Bennett, NS, Smith, AJ, Beer, CS, O'Reilly, L, Colombeau, B, Dilliway, GD, Harper, R, McNally, PJ, Gwilliam, R, Cowern, NEB and Sealy, BJ (2006) Enhanced antimony activation for ultra-shallow junctions in strained silicon Doping Engineering for Device Fabrication, 912. pp. 59-64.

Bennett, NS, O'Reilly, L, Smith, AJ, Gwilliam, RM, McNally, PJ, Cowern, NEB and Sealy, BJ (2006) Strain-enhanced activation of Sb ultrashallow junctions Ion Implantation Technology, 866. pp. 54-57.

Dilliway, GDM, Cowern, NEB, Xu, L, McNally, PJ, Jeynes, C, Mendoza, E, Ashburn, P and Bagnall, DM (2004) Influence of H2 preconditioning on the nucleation and growth of self-assembled germanium islands on silicon (001) Materials Research Society Symposium Proceedings, 820. pp. 351-356.

Dilliway, GDM, Cowern, NEB, Jeynes, C, O'Reilly, L, McNally, PJ and Bagnall, DM (2003) Structural and compositional evolution of self-assembled germanium islands on silicon (001) during high growth rate LPCVD Materials Research Society Symposium - Proceedings, 775. pp. 275-280.

Conference or Workshop Item

Xu, L, McNally, PJ, Dilliway, GDM, Cowern, NEB, Jeynes, C, Mendoza, E, Ashburn, P and Bagnall, DM (2005) Raman study of the strain and H-2 preconditioning effect on self-assembled Ge island on Si (001) In: 5th International Conference on Materials for Microelectronics and Nanoengineering, 2004-09-13 - 2004-09-14, Univ Southampton, Southampton, ENGLAND.

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