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Items where Author is "McConville, D"

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Number of items: 6.

Article

Fehse, R, O'Reilly, EP, Sweeney, SJ, Adams, AR, McConville, D, Riechert, H and Geelhaar, L (2005) Investigation of carrier recombination processes and transport properties in GaInAsN/GaAs quantum wells AIP Conference Proceedings, 772. pp. 985-986.

Conference or Workshop Item

McConville, DG, Sweeney, SJ, Adams, AR, Tomic, S and Riechert, H (2007) Temperature and pressure dependence of the recombination mechanisms in 1.3 pm and 1.5 pm GaInNAs lasers In: 12th International Conference on High Pressure Semiconductor Physics (HPSP-12), 2006-07-31 - 2006-08-03, Barcelona, SPAIN.

Sweeney, SJ, McConville, D, Masse, NF, Bouyssou, RX, Adams, AR, Ahmad, CN and Hanke, C (2004) Temperature and pressure dependence of recombination processes in 1.5 mu m InGaAlAs/InP-based quantum well lasers In: 11th International Conference on High-Pressure Semiconductor Physics (HPSP-11), 2004-08-02 - 2004-08-05, Berkeley, CA.

Fehse, R, Sweeney, SJ, Adams, AR, McConville, D, Riechert, H and Geelhaar, L (2004) Influence of growth temperature on carrier recombination in GaInNAs-based lasers In: Symposium on Dilute Nitride and Related Mismatched Semiconductor Alloys held at the 2004 Spring Meeting of the EMRS, 2004-05-24 - 2004-05-28, Strasbourg, FRANCE.

Fehse, R, Sweeney, Stephen, Adams, Alfred, McConville, D, Riechert, H and Geelhaar, L (2004) Influence of growth temperature on defect density in 1.3 mu m GaInNAs-based lasers In: 19th IEEE International Semiconductor Laser Conference, 2004-09-21 - 2004-09-25, Matsue, JAPAN.

Sweeney, Stephen, McConville, D, Jin, SR, Ahmad, CN, Masse, NF, Bouyssou, RX, Adams, Alfred and Hanke, C (2004) Temperature and wavelength dependence of recombination processes in 1.5 mu m InGaAlAs/InP-based lasers In: 16th International Conference on Indium Phosphide and Related Materials, 2004-05-31 - 2004-06-04, Kagoshima, JAPAN.

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