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Items where Author is "Marko, IP"

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Chai, GMT, Hosea, TJC, Fox, NE, Hild, K, Ikyo, AB, Marko, IP, Sweeney, SJ, Bachmann, A, Arafin, S and Amann, M-C (2014) Characterization of 2.3 mu m GaInAsSb-based vertical-cavity surface-emitting laser structures using photo-modulated reflectance JOURNAL OF APPLIED PHYSICS, 115 (1). ? - ?. ISSN 0021-8979

Tan, SL, Soong, WM, Green, JE, Steer, MJ, Zhang, S, Tan, LJJ, Ng, JS, Marko, IP, Sweeney, SJ, Adams, AR, Allam, J and David, JPR (2013) Experimental evaluation of impact ionization in dilute nitride GaInNAs diodes APPLIED PHYSICS LETTERS, 103 (10). ? - ?. ISSN 0003-6951

Ludewig, P, Knaub, N, Hossain, N, Reinhard, S, Nattermann, L, Marko, IP, Jin, SR, Hild, K, Chatterjee, S, Stolz, W, Sweeney, SJ and Volz, K (2013) Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser APPLIED PHYSICS LETTERS, 102 (24). ? - ?. ISSN 0003-6951

Tan, SL, Hunter, CJ, Zhang, S, Tan, LJJ, Goh, YL, Ng, JS, David, JPR, Marko, IP, Sweeney, SJ, Adams, AR and Allam, J (2012) Improved optoelectronic properties of rapid thermally annealed dilute nitride GaInNAs photodetectors Journal of Electronic Materials, 41 (12). 3393 - 3401. ISSN 0361-5235

Marko, IP, Batool, Z, Hild, K, Jin, SR, Hossain, N, Hosea, TJC, Sweeney, SJ, Hosea, TJC, Petropoulos, JP, Zhong, Y, Dongmo, PB and Zide, JMO (2012) Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications Applied Physics Letters, 101 (22). ISSN 0003-6951

Blume, G, Hild, K, Marko, IP, Hosea, TJC, Yu, S-Q, Chaparro, SA, Samal, N, Johnson, SR, Zhang, Y-H and Sweeney, SJ (2012) Cavity mode gain alignment in GaAsSb-based near-infrared vertical cavity lasers studied by spectroscopy and device measurements JOURNAL OF APPLIED PHYSICS, 112 (3). ? - ?. ISSN 0021-8979

Hossain, N, Marko, IP, Jin, SR, Hild, K, Sweeney, SJ, Lewis, RB, Beaton, DA and Tiedje, T (2012) Recombination mechanisms and band alignment of GaAs1-xBix/GaAs light emitting diodes APPLIED PHYSICS LETTERS, 100 (5). ? - ?. ISSN 0003-6951

Reed, GT, Thomson, DJ, Gardes, FY, Hu, Y, Owens, N, Yang, X, Petropoulos, P, Debnath, K, O'Faolain, L, Krauss, TF, Lever, L, Ikonic, Z, Kelsall, RW, Myronov, M, Leadley, DR, Marko, IP, Sweeney, SJ, Cox, DC, Brimont, A, Sanchis, P, Duan, G-H, Le Liepvre, A, Jany, C, Lamponi, M, Make, D, Lelarge, F, Fedeli, JM, Messaoudene, S, Keyvaninia, S, Roelkens, G, Van Thourhout, D and Liu, S (2012) High performance silicon optical modulators Proceedings of SPIE - The International Society for Optical Engineering, 8564. ISSN 0277-786X

Lever, L, Hu, Y, Myronov, M, Liu, X, Owens, N, Gardes, FY, Marko, IP, Sweeney, SJ, Ikonic, Z, Leadley, DR, Reed, GT and Kelsall, RW (2011) Modulation of the absorption coefficient at 1.3 mu m in Ge/SiGe multiple quantum well heterostructures on silicon OPTICS LETTERS, 36 (21). 4158 - 4160. ISSN 0146-9592

Cheetham, KJ, Krier, A, Marko, IP, Aldukhayel, A and Sweeney, SJ (2011) Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes APPL PHYS LETT, 99 (14). ISSN 0003-6951

Hild, K, Marko, IP, Johnson, SR, Yu, S-Q, Zhang, Y-H and Sweeney, SJ (2011) Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3 mu m GaAsSb/GaAs vertical cavity surface emitting lasers APPLIED PHYSICS LETTERS, 99 (7). ? - ?. ISSN 0003-6951

Ikyo, BA, Marko, IP, Adams, AR, Sweeney, SJ, Canedy, CL, Vurgaftman, I, Kim, CS, Kim, M, Bewley, WW and Meyer, JR (2011) Temperature dependence of 4.1 mu m mid-infrared type II "W" interband cascade lasers APPLIED PHYSICS LETTERS, 99 (2). ? - ?. ISSN 0003-6951

Sayid, SA, Marko, IP, Sweeney, SJ, Barrios, P and Poole, PJ (2010) Efficiency limiting processes in 1.55 mu m InAs/InP-based quantum dots lasers APPLIED PHYSICS LETTERS, 97 (16). ? - ?. ISSN 0003-6951

Marko, IP, Aldukhayel, AM, Adams, AR, Sweeney, SJ, Teissier, R, Baranov, AN and Tomić, S (2010) Physical properties of short wavelength 2.6μm InAs/AlSb-based quantum cascade lasers Conference Digest - IEEE International Semiconductor Laser Conference. 95 - 96. ISSN 0899-9406

Tan, SL, Tan, LJJ, Goh, YL, Zhang, S, Ng, JS, David, JPR, Marko, IP, Allam, J, Sweeney, SJ and Adams, AR (2010) Reduction of dark current and unintentional background doping in InGaAsN photodetectors by ex situ annealing In: Optical Sensing and Detection, 2010-04-12 - 2010-04-15, Brussels, Belgium.

Sayid, SA, Marko, IP, Sweeney, SJ and Poole, P (2010) Temperature sensitivity of 1.55μm (100) InAs/InP-based quantum dot lasers In: 22nd IPRM, 2010-05-31 - 2010-06-04, Kagawa, Japan.

Sayid, SA, Marko, IP, Cannard, PJ, Chen, X, Rivers, LJ, Lealman, IF and Sweeney, SJ (2010) Thermal performance of 1.55μm InGaAlAs quantum well buried heterostructure lasers In: 22nd IPRM, 2010-05-31 - 2010-06-04, Kagawa, Japan.

Marko, IP, Ikyo, AB, Adams, AR, Sweeney, SJ, Bachmann, A, Kashani-Shirazi, K and Amann, M-C (2009) Band-structure and gain-cavity tuning of 2.4-μm GaSb buried tunnel junction VCSELs Proceedings of European Conference on Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference.

Adams, AR, Marko, IP, Sweeney, SJ, Teissier, R, Baranov, AN and Tomić, S (2009) The effect of hydrostatic pressure on the operation of quantum cascade lasers In: Quantum Sensing and Nanophotonic Devices VI, 2009-01-25 - 2009-01-28, San Jose, USA.

Masse, NF, Homeyer, E, Marko, IP, Adams, AR, Sweeney, SJ, Dehaese, O, Piron, R, Grillot, F and Loualiche, S (2007) Temperature and pressure dependence of the recombination processes in 1.5 mu m InAs/InP (311)B quantum dot lasers APPL PHYS LETT, 91 (13). ? - ?. ISSN 0003-6951

Masse, NF, Homeyer, E, Marko, IP, Adams, AR, Sweeney, SJ, Dehaese, O, Piron, R, Grillot, F and Loualiche, S (2007) Temperature and pressure dependence of the recombination processes in 1.5 mu m InAs/InP (311)B quantum dot lasers APPLIED PHYSICS LETTERS, 91 (13). ? - ?. ISSN 0003-6951

Marko, IP, Masse, NF, Sweeney, SJ, Adams, AR, Hatori, N, Sugawara, M, Jantsch, W and Schaffler, F (2007) Recombination, transport and loss mechanisms in p-doped InAs/GaAs quantum dots In: 28th International Conference on the Physics of Semiconductors (ICPS-28), 2006-07-24 - 2006-07-28, Vienna, AUSTRIA.

Marko, IP, Adams, AR, Sweeney, SJ, Whitbread, ND, Ward, AJ, Asplin, B and Robbins, DJ (2007) The influence of carrier density non-pinning on the output power of 1.55 μm lasers at high temperature In: CLEOE-IQEC 2007, 2007-06-17 - 2007-06-23, Munich, Germany.

Masse, NF, Sweeney, SJ, Marko, IP, Adams, AR, Hatori, N and Sugawara, M (2006) Temperature dependence of the gain in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum dot lasers APPL PHYS LETT, 89 (19). ? - ?. ISSN 0003-6951

Masse, NF, Sweeney, SJ, Marko, IP, Adams, AR, Hatori, N and Sugawara, M (2006) Temperature dependence of the gain in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum dot lasers APPLIED PHYSICS LETTERS, 89 (19). ? - ?. ISSN 0003-6951

Hild, K, Sweeney, SJ, Wright, S, Lock, DA, Jin, SR, Marko, IP, Johnson, SR, Chaparro, SA, Yu, SQ and Zhang, YH (2006) Carrier recombination in 1.3 mu m GaAsSb/GaAs quantum well lasers APPL PHYS LETT, 89 (17). ? - ?. ISSN 0003-6951

Hild, K, Sweeney, SJ, Wright, S, Lock, DA, Jin, SR, Marko, IP, Johnson, SR, Chaparro, SA, Yu, S-Q and Zhang, Y-H (2006) Carrier recombination in 1.3 mu m GaAsSb/GaAs quantum well lasers APPLIED PHYSICS LETTERS, 89 (17). ? - ?. ISSN 0003-6951

Massé, NF, Sweeney, SJ, Marko, IP, Andreev, AD, Adams, AR, Hatori, N and Sugawara, M (2006) Intrinsic limitations of p-doped and undoped 1.3 μm InAs/GaAs quantum dot lasers In: ISLC 2006, 2006-09-17 - 2006-09-21, Hawaii, USA.

Marko, IP, Masse, NF, Sweeney, SJ, Andreev, AD, Adams, AR, Hatori, N and Sugawara, M (2005) Carrier transport and recombination in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum-dot lasers APPLIED PHYSICS LETTERS, 87 (21). ? - ?. ISSN 0003-6951

Marko, IP, Adams, AR, Sweeney, SJ, Mowbray, DJ, Skolnick, MS, Liu, HYY and Groom, KM (2005) Recombination and loss mechanisms in low-threshold InAs-GaAs 1.3-mu m quantum-dot lasers In: 19th IEEE International Semiconductor Laser Conference, 2004-09-21 - 2004-09-25, Matsue, JAPAN.

Marko, IP, Andreev, AD, Sweeney, SJ, Adams, AR, Krebs, R, Deubert, S, Reithmaier, JP, Forchel, A, Menendez, J and VanDeWalle, CG (2005) The influence of auger processes on recombination in long-wavelength InAs/GaAs quantum dots In: 27th International Conference on the Physics of Semiconductors (ICPS-27), 2004-07-26 - 2004-07-30, Flagstaff, AZ.

Marko, IP, Masse, N, Sweeney, SJ, Adams, AR, Sellers, IR, Mowbray, DJ, Skolnick, MS, Liu, HY and Groom, KM (2005) Effect of gain saturation and nonradiative recombination on the thermal characteristics of InAs/GaAs 1.3 mu m quantum dot lasers

Masse, NF, Marko, IP, Sweeney, SJ, Adams, AR, Hatori, N and Sugarawa, M (2005) The influence of p-doping on the temperature sensitivity of 1.3 mu m quantum dot lasers

Marko, IP, Adams, AR, Sweeney, SJ, Sellers, IR, Mowbray, DJ, Skolnick, MS, Liu, HY and Groom, KM (2004) Recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 mu m quantum dot lasers In: 19th IEEE International Semiconductor Laser Conference, 2004-09-21 - 2004-09-25, Matsue, JAPAN.

This list was generated on Sat Oct 25 22:10:55 2014 IST.

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