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Broderick, CA, Jin, S, Marko, Igor, Hild, Konstanze, Ludewig, P, Bushell, Zoe, Stolz, W, Rorison, JM, O’Reilly, EP, Volz, K and Sweeney, Stephen (2017) GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics Scientific Reports, 7, 46371.

Eales, Timothy, Marko, Igor, Ikyo, BA, Adams, Alfred, Arafin, S, Sprengel, S, Amann, M-C and Sweeney, Stephen (2017) Wavelength dependence of efficiency limiting mechanisms in Type-I Mid-infrared GaInAsSb/GaSb lasers IEEE Journal of Selected Topics in Quantum Electronics, 23 (6).

Marko, Igor and Sweeney, Stephen (2017) Progress towards III-V-Bismide Alloys for Near- and Mid-Infrared Laser Diodes IEEE Journal of Selected Topics in Quantum Electronics, 23 (6), 1501512.

Marko, I, Broderick, CA, Jin, S, Ludewig, P, Stolz, W, Volz, K, Rorison, JM, O’Reilly, EP and Sweeney, SJ (2016) Optical gain in GaAsBi/GaAs quantum well diode lasers Scientific Reports, 6.

Marko, I, Sweeney, S and hild, K (2016) Temperature stable mid-infrared GaInAsSb/GaSb Vertical Cavity Surface Emitting Lasers (VCSELs) Scientific Reports, 6, 19595.

Marko, IP, Jin, SR, Hild, K, Batool, Z, Bushell, ZL, Ludewig, P, Stolz, W, Volz, K, Butkute, R, Pacebutas, V, Geizutis, A, Krotkus, A and Sweeney, SJ (2015) Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30 (9), ARTN 0.

Marko, Igor, Read, GW, Hossain, N and Sweeney, Stephen (2015) Physical Properties and Characteristics of III-V Lasers on Silicon IEEE Journal of Selected Topics in Quantum Electronics, 21 (6), 1502208.

Adams, Alfred, Marko, Igor, Mukherjee, J, Stolojan, Vlad, Sweeney, Stephen, Gocalinska, A, Pelucchi, E, Thomas, K and Corbett, B (2015) Semiconductor Quantum Well Lasers With a Temperature-Insensitive Threshold Current IEEE Journal of Selected Topics in Quantum Electronics, 21 (6), 150080.

Marko, IP and Sweeney, SJ (2015) Optical and electronic processes in semiconductor materials for device applications Springer Series in Materials Science, 203. pp. 253-297.

Marko, IP, Bushell, ZL, Jin, SR, Hild, K, Batool, Z, Sweeney, SJ, Ludewig, P, Reinhard, S, Nattermann, L, Stolz, W and Volz, K (2014) Physical properties and optimization of GaBiAs/(Al)GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi Journal of Physics D: Applied Physics, 47 (34).

Chai, GMT, Hosea, TJC, Fox, NE, Hild, K, Ikyo, AB, Marko, IP, Sweeney, SJ, Bachmann, A, Arafin, S and Amann, M-C (2014) Characterization of 2.3 mu m GaInAsSb-based vertical-cavity surface-emitting laser structures using photo-modulated reflectance JOURNAL OF APPLIED PHYSICS, 115 (1), ARTN 0.

Sweeney, SJ, Marko, IP, Jin, SR, Hild, K, Batool, Z, Ludewig, P, Natterman, L, Bushell, Z, Stolz, W, Volz, K, Broderick, CA, Usman, M, Harnedy, PE, Oreilly, EP, Butkute, R, Pacebutas, V, Geiutis, A and Krotkus, A (2014) Electrically injected GaAsBi quantum well lasers Conference Digest - IEEE International Semiconductor Laser Conference. pp. 80-81.

Marko, IP, Adams, AR, Massé, NF and Sweeney, SJ (2014) Effect of non-pinned carrier density above threshold in InAs quantum dot and quantum dash lasers IET Optoelectronics, 8 (2). pp. 88-93.

Tan, SL, Soong, WM, Green, JE, Steer, MJ, Zhang, S, Tan, LJJ, Ng, JS, Marko, IP, Sweeney, SJ, Adams, AR, Allam, J and David, JPR (2013) Experimental evaluation of impact ionization in dilute nitride GaInNAs diodes APPLIED PHYSICS LETTERS, 103 (10), ARTN 1.

Pal, J, Migliorato, MA, Li, C-K, Wu, Y-R, Crutchley, BG, Marko, IP and Sweeney, SJ (2013) Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field management Journal of Applied Physics, 114 (7).

Ludewig, P, Knaub, N, Hossain, N, Reinhard, S, Nattermann, L, Marko, IP, Jin, SR, Hild, K, Chatterjee, S, Stolz, W, Sweeney, SJ and Volz, K (2013) Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser APPLIED PHYSICS LETTERS, 102 (24), ARTN 2.

Aldukhayel, A, Jin, SR, Marko, IP, Sweeney, SJ, Zhang, SY, Revin, DG and Cockburn, JW (2013) Investigations of carrier scattering into L-valley in λ=3.5μm InGaAs/AlAs(Sb) quantum cascade lasers using high hydrostatic pressure Physica Status Solidi (B) Basic Research, 250 (4). pp. 693-697.

Crutchley, BG, Marko, IP, Sweeney, SJ, Pal, J and Migliorato, MA (2013) Optical properties of InGaN-based LEDs investigated using high hydrostatic pressure dependent techniques Physica Status Solidi (B) Basic Research, 250 (4). pp. 698-702.

Crutchley, BG, Marko, Igor, Adams, Alfred and Sweeney, Stephen (2013) Investigating the efficiency limitations of GaN-based emitters 2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013.

Ikyo, BA, Marko, IP, Hild, K, Adams, AR, Sweeney, SJ, Arafin, S and Amann, M-C (2013) The effect of hole leakage and auger recombination on the temperature sensitivity of GaInAsSb/GaSb mid-infrared lasers Lasers and Electro-Optics Europe (CLEO EUROPE/IQEC), 2013 Conference on and International Quantum Electronics Conference.

Tan, S, Hunter, CJ, Zhang, S, Tan, LJJ, Goh, YL, Ng, JS, David, JPR, Marko, Igor, Sweeney, Stephen, Adams, Alfred and Allam, Jeremy (2012) Improved optoelectronic properties of rapid thermally annealed dilute nitride GaInNAs photodetectors Journal of Electronic Materials, 41 (12). pp. 3393-3401.

Marko, IP, Batool, Z, Hild, K, Jin, SR, Hossain, N, Hosea, TJC, Sweeney, SJ, Hosea, TJC, Petropoulos, JP, Zhong, Y, Dongmo, PB and Zide, JMO (2012) Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications Applied Physics Letters, 101 (22).

Blume, G, Hild, K, Marko, IP, Hosea, TJC, Yu, S-Q, Chaparro, SA, Samal, N, Johnson, SR, Zhang, Y-H and Sweeney, SJ (2012) Cavity mode gain alignment in GaAsSb-based near-infrared vertical cavity lasers studied by spectroscopy and device measurements JOURNAL OF APPLIED PHYSICS, 112 (3), ARTN 0.

Hossain, N, Marko, IP, Jin, SR, Hild, K, Sweeney, SJ, Lewis, RB, Beaton, DA and Tiedje, T (2012) Recombination mechanisms and band alignment of GaAs1-xBix/GaAs light emitting diodes APPLIED PHYSICS LETTERS, 100 (5), ARTN 0.

Reed, GT, Thomson, DJ, Gardes, FY, Hu, Y, Owens, N, Yang, X, Petropoulos, P, Debnath, K, O'Faolain, L, Krauss, TF, Lever, L, Ikonic, Z, Kelsall, RW, Myronov, M, Leadley, DR, Marko, IP, Sweeney, SJ, Cox, DC, Brimont, A, Sanchis, P, Duan, G-H, Le Liepvre, A, Jany, C, Lamponi, M, Make, D, Lelarge, F, Fedeli, JM, Messaoudene, S, Keyvaninia, S, Roelkens, G, Van Thourhout, D and Liu, S (2012) High performance silicon optical modulators Proceedings of SPIE - The International Society for Optical Engineering, 8564.

Lever, L, Hu, Y, Myronov, M, Liu, X, Owens, N, Gardes, FY, Marko, IP, Sweeney, SJ, Ikonic, Z, Leadley, DR, Reed, GT and Kelsall, RW (2011) Modulation of the absorption coefficient at 1.3 mu m in Ge/SiGe multiple quantum well heterostructures on silicon OPTICS LETTERS, 36 (21). pp. 4158-4160.

Cheetham, KJ, Krier, A, Marko, IP, Aldukhayel, A and Sweeney, SJ (2011) Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes APPL PHYS LETT, 99 (14), 141110.

Hild, K, Marko, IP, Johnson, SR, Yu, S-Q, Zhang, Y-H and Sweeney, SJ (2011) Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3 mu m GaAsSb/GaAs vertical cavity surface emitting lasers APPLIED PHYSICS LETTERS, 99 (7), ARTN 0.

Ikyo, BA, Marko, IP, Adams, AR, Sweeney, SJ, Canedy, CL, Vurgaftman, I, Kim, CS, Kim, M, Bewley, WW and Meyer, JR (2011) Temperature dependence of 4.1 mu m mid-infrared type II "W" interband cascade lasers APPLIED PHYSICS LETTERS, 99 (2), ARTN 0.

Tan, SL, Zhang, S, Soong, WM, Goh, YL, Tan, LJJ, Ng, JS, David, JPR, Marko, IP, Adams, AR, Sweeney, SJ and Allam, J (2011) GaInNAsSb/GaAs Photodiodes for Long-Wavelength Applications IEEE ELECTRON DEVICE LETTERS, 32 (7). pp. 919-921.

Sayid, SA, Marko, IP, Sweeney, SJ, Barrios, P and Poole, PJ (2010) Efficiency limiting processes in 1.55 mu m InAs/InP-based quantum dots lasers APPLIED PHYSICS LETTERS, 97 (16), ARTN 1.

Sayid, SA, Marko, IP, Cannard, PJ, Chen, X, Rivers, LJ, Lealman, IF and Sweeney, SJ (2010) Thermal Characteristics of 1.55-mu m InGaAlAs Quantum Well Buried Heterostructure Lasers IEEE JOURNAL OF QUANTUM ELECTRONICS, 46 (5). pp. 700-705.

Marko, IP, Aldukhayel, AM, Adams, AR, Sweeney, SJ, Teissier, R, Baranov, AN and Tomić, S (2010) Physical properties of short wavelength 2.6μm InAs/AlSb-based quantum cascade lasers Conference Digest - IEEE International Semiconductor Laser Conference. pp. 95-96.

Ikyo, BA, Marko, IP, Adams, AR, Sweeney, SJ, Canedy, CL, Vurgaftman, I, Kim, CS, Kim, M, Bewley, WW and Meyer, JR (2010) Temperature sensitivity of mid-infrared type II "W" interband cascade lasers (ICL) emitting at 4.1μm at room temperature 22nd IEEE International Semi-conductor Laser Conference. pp. 41-42.

Crowley, MT, Marko, IP, Masse, NF, Andreev, AD, Tomic, S, Sweeney, SJ, O'Reilly, EP and Adams, AR (2009) The Importance of Recombination via Excited States in InAs/GaAs 1.3 mu m Quantum-Dot Lasers IEEE J SEL TOP QUANT, 15 (3). pp. 799-807.

Masse, NF, Marko, IP, Adams, AR and Sweeney, SJ (2009) Temperature insensitive quantum dot lasers: are we really there yet? JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 20. pp. 272-276.

Marko, IP, Ikyo, AB, Adams, AR, Sweeney, SJ, Bachmann, A, Kashani-Shirazi, K and Amann, M-C (2009) Band-structure and gain-cavity tuning of 2.4-μm GaSb buried tunnel junction VCSELs Proceedings of European Conference on Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference.

Masse, NF, Homeyer, E, Marko, IP, Adams, AR, Sweeney, SJ, Dehaese, O, Piron, R, Grillot, F and Loualiche, S (2007) Temperature and pressure dependence of the recombination processes in 1.5 mu m InAs/InP (311)B quantum dot lasers APPL PHYS LETT, 91 (13), 131113.

Masse, NF, Homeyer, E, Marko, IP, Adams, AR, Sweeney, SJ, Dehaese, O, Piron, R, Grillot, F and Loualiche, S (2007) Temperature and pressure dependence of the recombination processes in 1.5 mu m InAs/InP (311)B quantum dot lasers APPLIED PHYSICS LETTERS, 91 (13), ARTN 1.

Masse, NF, Sweeney, SJ, Marko, IP, Adams, AR, Hatori, N and Sugawara, M (2006) Temperature dependence of the gain in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum dot lasers APPL PHYS LETT, 89 (19), 191118.

Masse, NF, Sweeney, SJ, Marko, IP, Adams, AR, Hatori, N and Sugawara, M (2006) Temperature dependence of the gain in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum dot lasers APPLIED PHYSICS LETTERS, 89 (19), ARTN 1.

Hild, K, Sweeney, SJ, Wright, S, Lock, DA, Jin, SR, Marko, IP, Johnson, SR, Chaparro, SA, Yu, S-Q and Zhang, Y-H (2006) Carrier recombination in 1.3 mu m GaAsSb/GaAs quantum well lasers APPLIED PHYSICS LETTERS, 89 (17), ARTN 1.

Marko, IP, Masse, NF, Sweeney, SJ, Andreev, AD, Adams, AR, Hatori, N and Sugawara, M (2005) Carrier transport and recombination in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum-dot lasers APPLIED PHYSICS LETTERS, 87 (21), ARTN 2.

Marko, I P, Andreev, A D, Adams, A R, Krebs, R, Reithmaier, J P and Forchel, A (2003) The Role of Auger Recombination in InAs 1.3-/mu m Quantum-Dot Lasers Investigated Using High Hydrostatic Pressure IEEE Journal of Selected Topics in Quantum Electronics, 9 (5).

Marko, IP, Andreev, AD, Adams, AR, Krebs, R, Reithmaier, JP and Forchel, A (2003) Importance of Auger recombination in InAs 1.3 mu m quantum dot lasers ELECTRONICS LETTERS, 39 (1). pp. 58-59.

Marko, I P, Andreev, A D, Adams, A R, Krebs, R, Reithmaier, J P and Forchel, A (2003) The Importance of Auger Recombination in InAs 1.3 um Quantum Dot Lasers Electronics Letters, 58 (59).

Marko, IP, Andreev, AD, Adams, AR, Krebs, R, Reithmaier, JP and Forchel, A (2003) Auger recombination in 1.3-μm InAs/GaInAs quantum dot lasers studied using high pressure Conference on Lasers and Electro-Optics Europe - Technical Digest. p. 175.

Conference or Workshop Item

Sweeney, SJ, Marko, IP, Jin, SR, Hild, K, Batool, Z, Ludewig, P, Natterman, L, Bushell, Z, Stolz, W, Volz, K, Broderick, CA, Usman, M, Harnedy, PE, O'Reilly, EP, Butkute, R, Pacebutas, V, Geizutis, A and Krotkus, A (2014) Electrically injected GaAsBi Quantum Well Lasers In: 24th IEEE International Semiconductor Laser Conference (ISLC), 2014-09-07 - 2014-09-10, Palma de Mallorca, SPAIN.

Adams, AR, Marko, IP, Mukherjee, J, Sweeney, SJ, Gocalinska, A, Pelucchi, E and Corbett, B (2014) Semiconductor Quantum Well Lasers with a Temperature Insensitive Threshold Current In: 24th IEEE International Semiconductor Laser Conference (ISLC), 2014-09-07 - 2014-09-10, Palma de Mallorca, SPAIN.

Adams, Alfred, Marko, Igor, Mukherjee, J, Sweeney, Stephen, Gocalinska, A, Pelucchi, E and Corbett, B (2014) Semiconductor quantum well lasers with a temperature insensitive threshold current

Hild, K, Batool, Z, Jin, SR, Hossain, N, Marko, IP, Hosea, TJC, Lu, X, Tiedje, T and Sweeney, SJ (2013) Auger Recombination Suppression And Band Alignment In GaAsBi/GaAs Heterostructures In: 31st International Conference on the Physics of Semiconductors (ICPS), 2012-07-29 - 2012-08-03, Zurich, SWITZERLAND.

Hosea, TJC, Chai, GMT, Marko, IP, Batool, Z, Hild, K, Jin, SR, Hossain, N, Sweeney, SJ, Petropoulos, JP, Zhong, Y, Dongmo, PB and Zide, JMO (2012) InGaBiAs/InP semiconductors for mid-infrared applications: Dependence of bandgap and spin-orbit splitting on temperature and bismuth content

Lever, L, Hu, Y, Myronov, M, Liu, X, Owens, N, Gardes, FY, Marko, IP, Sweeney, SJ, Ikonić, Z, Leadley, DR, Reed, GT and Kelsall, RW (2011) Strain engineering of the electroabsorption response in Ge/SiGe multiple quantum well heterostructures In: Group IV Photonics, 2011-09-14 - 2011-09-16, London, UK.

Crutchley, BG, Marko, IP, Adams, AR and Sweeney, SJ (2010) Efficiency limitations of green InGaN LEDs and laser diodes In: ISLC 2010, 2010-09-26 - 2010-09-30, Kyoto, Japan.

Tan, SL, Tan, LJJ, Goh, YL, Zhang, S, Ng, JS, David, JPR, Marko, IP, Allam, J, Sweeney, SJ and Adams, AR (2010) Reduction of dark current and unintentional background doping in InGaAsN photodetectors by ex situ annealing In: Optical Sensing and Detection, 2010-04-12 - 2010-04-15, Brussels, Belgium.

Sayid, SA, Marko, IP, Sweeney, SJ and Poole, P (2010) Temperature sensitivity of 1.55μm (100) InAs/InP-based quantum dot lasers In: 22nd IPRM, 2010-05-31 - 2010-06-04, Kagawa, Japan.

Sayid, SA, Marko, IP, Adams, AR, Sweeney, SJ, Barrios, P and Poole, P (2010) Thermal behavior of 1.55 μm (100) InAs/InP-based quantum dot lasers In: ISLC 2010, 2010-09-26 - 2010-09-30, Kyoto, Japan.

Sayid, SA, Marko, IP, Cannard, PJ, Chen, X, Rivers, LJ, Lealman, IF and Sweeney, SJ (2010) Thermal performance of 1.55μm InGaAlAs quantum well buried heterostructure lasers In: 22nd IPRM, 2010-05-31 - 2010-06-04, Kagawa, Japan.

Mashanovich, GZ, Headley, WR, Milosevic, MM, Owens, N, Teo, EJ, Xiong, BQ, Yang, PY, Nedeljkovic, M, Anguita, J, Marko, I and Hu, Y (2010) Waveguides for mid-infrared group IV photonics In: 7th IEEE GFP, 2010-09-01 - 2010-09-03, Beijing, China.

Ikyo, AB, Marko, IP, Adams, AR, Sweeney, SJ, Bachmann, A, Kashani-Shirazi, K and Amann, M-C (2009) Gain peak-cavity mode alignment optimisation in buried tunnel junction mid-infrared GaSb vertical cavity surface emitting lasers using hydrostatic pressure In: Semiconductor and Integrated Optoelectronics Conference (SIOE 2009), 2009 - ?, Cardiff, WALES.

Marko, IP, Adams, AR, Sweeney, SJ, Teissier, R, Baranov, AN and Tomic, S (2009) Evidence of carrier leakage into the L-valley in InAs-based quantum cascade lasers under high hydrostatic pressure In: 13th International Conference on High Pressure Semiconductor Physics (HPSP-13), 2008-07-22 - 2008-07-25, Fortaleza, BRAZIL.

Tan, LJJ, Soong, WS, Tan, SL, Goh, YL, Steer, MJ, Ng, JS, David, JPR, Marko, IP, Chamings, J, Allam, J, Sweeney, SJ and Adams, AR (2009) Dark current mechanisms in InxGa1-xAs 1-yNy In: LEOS '09, 2009-10-04 - 2009-10-08, Belek-Antalya, Turkey.

Adams, AR, Marko, IP, Sweeney, SJ, Teissier, R, Baranov, AN and Tomić, S (2009) The effect of hydrostatic pressure on the operation of quantum cascade lasers In: Quantum Sensing and Nanophotonic Devices VI, 2009-01-25 - 2009-01-28, San Jose, USA.

Marko, IP, Adams, AR, Sweeney, SJ, Teissier, R, Baranov, AN and Tomic, S (2008) Gamma-L scattering in InAs-based quantum cascade lasers studied using high hydrostatic pressure In: IEEE 21st International Semiconductor Laser Conference, 2008-09-14 - 2008-09-18, Sorrento, ITALY.

Sweeney, SJ, Hild, K, Marko, IP, Yu, S-Q, Johnson, SR and Zhang, Y-H (2008) Thermal characteristics of 1.3 mu m GaAsSb/GaAs-based Edge- and Surface-emitting Lasers In: IEEE 21st International Semiconductor Laser Conference, 2008-09-14 - 2008-09-18, Sorrento, ITALY.

Lealman, I, Dosanjh, S, Rivers, L, O'Brien, S, Cannard, P, Sweeney, SJ, Marko, IP and Rushworth, S (2008) Reliable 1550nm SI BH lasers fabricated using an improved Ru precursor In: IPRM 2008, 2008-05-25 - 2008-05-29, Versailles, France.

Crowley, MT, Marko, IP, Masse, NF, Andreev, AD, Sweeney, SJ, O'Reilly, EP and Adams, AR (2008) The importance of recombination via excited states in InAs/GaAs 1.3μm quantum dot lasers In: 21st ISLC 2008, 2008-09-14 - 2008-09-18, Sorento, Italy.

Marko, IP, Adams, AR, Sweeney, SJ, Masse, NF, Krebs, R, Reithmaier, JP, Forchel, A, Mowbray, DJ, Skolnick, MS, Liu, HY, Groom, KM, Hatori, N and Sugawara, M (2007) Band gap dependence of the recombination processes in InAs/GaAs quantum dots studied using hydrostatic pressure In: 12th International Conference on High Pressure Semiconductor Physics (HPSP-12), 2006-07-31 - 2006-08-03, Barcelona, SPAIN.

Marko, IP, Masse, NF, Sweeney, SJ, Adams, AR, Hatori, N, Sugawara, M, Jantsch, W and Schaffler, F (2007) Recombination, transport and loss mechanisms in p-doped InAs/GaAs quantum dots In: 28th International Conference on the Physics of Semiconductors (ICPS-28), 2006-07-24 - 2006-07-28, Vienna, AUSTRIA.

Hild, K, Sweeney, SJ, Marko, IP, Jin, SR, Johnson, SR, Chaparro, SA, Yu, S and Zhang, Y-H (2007) Temperature and pressure dependence of carrier recombination processes in GaAsSb/GaAs quantum well lasers In: 12th International Conference on High Pressure Semiconductor Physics (HPSP-12), 2006-07-31 - 2006-08-03, Barcelona, SPAIN.

Marko, IP, Adams, AR, Sweeney, SJ, Whitbread, ND, Ward, AJ, Asplin, B and Robbins, DJ (2007) The influence of carrier density non-pinning on the output power of 1.55 μm lasers at high temperature In: CLEOE-IQEC 2007, 2007-06-17 - 2007-06-23, Munich, Germany.

Massé, NF, Sweeney, SJ, Marko, IP, Andreev, AD, Adams, AR, Hatori, N and Sugawara, M (2006) Intrinsic limitations of p-doped and undoped 1.3 μm InAs/GaAs quantum dot lasers In: ISLC 2006, 2006-09-17 - 2006-09-21, Hawaii, USA.

Marko, Igor, Masse, N, Sweeney, SJ, Adams, AR, Sellers, IR, Mowbray, DJ, Skolnick, MS, Liu, HY and Groom, KM (2005) Effect of gain saturation and nonradiative recombination on the thermal characteristics of InAs/GaAs 1.3 mu m quantum dot lasers In: 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 22-28 Oct 2005, Sydney, NSW, Australia.

Marko, Igor, Adams, Alfred, Sweeney, Stephen, Mowbray, DJ, Skolnick, MS, Liu, HYY and Groom, KM (2005) Recombination and loss mechanisms in low-threshold InAs-GaAs 1.3-mu m quantum-dot lasers In: 19th IEEE International Semiconductor Laser Conference, 2004-09-21 - 2004-09-25, Matsue, JAPAN.

Marko, IP, Andreev, AD, Sweeney, SJ, Adams, AR, Krebs, R, Deubert, S, Reithmaier, JP, Forchel, A, Menendez, J and VanDeWalle, CG (2005) The influence of auger processes on recombination in long-wavelength InAs/GaAs quantum dots In: 27th International Conference on the Physics of Semiconductors (ICPS-27), 2004-07-26 - 2004-07-30, Flagstaff, AZ.

Masse, NF, Marko, Igor, Sweeney, Stephen, Adams, Alfred, Hatori, N and Sugarawa, M (2005) The influence of p-doping on the temperature sensitivity of 1.3 mu m quantum dot lasers In: 2005 IEEE LEOS Annual Meeting Conference (LEOS), 22-28 Oct 2005, Sydney, Australia.

Marko, IP, Sweeney, SJ, Adams, AR, Jin, SR, Murdin, BN, Schwertberger, R, Somers, A, Reithmaier, JP and Forchel, A (2004) Recombination mechanisms in InAs/InP quantum dash lasers studied using high hydrostatic pressure In: 11th International Conference on High-Pressure Semiconductor Physics (HPSP-11), 2004-08-02 - 2004-08-05, Berkeley, CA.

Marko, I. P., Adams, A. R., Sweeney, S. J., Jin, S. R., Murdin, B. N., Schwertberger, R., Somers, A., Reithmaier, J. P. and Forchel, A. (2004) Experimental investigations into the thermal properties of 1.5-1.8-/spl mu/m InAs/InP quantum dash lasers

Marko, I P, Adams, A R, Sweeney, S J, Jin, S R, Murdin, B N, Schwertberger, R, Somers, A, Reithmaier, J P and Forchel, A (2004) Experimental Investigations into the Thermal Properties of 1.5-1.8&#956m InAs/InP Quantum Dash Lasers In: 2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest..

Marko, IP, Adams, AR, Sweeney, SJ, Jin, SR, Murdin, BN, Schwertberger, R, Somers, A, Reithmaier, JP and Forchel, A (2004) Experimental investigations into the thermal properties of 1.5-1.8-mu m InAs/InP quantum dash lasers In: 19th IEEE International Semiconductor Laser Conference, 2004-09-21 - 2004-09-25, Matsue, JAPAN.

Marko, Igor, Adams, Alfred, Sweeney, Stephen, Sellers, IR, Mowbray, DJ, Skolnick, MS, Liu, HY and Groom, KM (2004) Recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 mu m quantum dot lasers In: 19th IEEE International Semiconductor Laser Conference, 2004-09-21 - 2004-09-25, Matsue, JAPAN.

Fehse, R, Marko, I and Adams, AR (2003) Long wavelength lasers on GaAs substrates In: 6th International Conference on Optoelectronics, Fibre Optics and Photonics, 2002-12 - ?, MUMBAI, INDIA.

Marko, IP, Andreev, AD, Adams, AR, Krebs, R, Reithmaier, JP and Forchel, A (2003) High-pressure studies of the recombination processes, threshold currents, and lasing wavelengths in InAs/GaInAs quantum dot lasers In: 10th International Conference on High Pressures in Semiconductor Physics (HPSP-X), 2002-08-05 - 2002-08-08, UNIV SURREY, GUILDFORD, ENGLAND.

Dataset

Marko, Igor (2017) Dataset for Progress towards III-V-Bismide Alloys for Near- and Mid-Infrared Laser Diodes [Dataset]

Marko, IP (2017) GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics [Dataset]

Marko, IP, Sweeney, SJ, Ikyo, BA and Hild, K (2015) Temperature stable mid-infrared GaInAsSb/GaSb Vertical Cavity Surface Emitting Lasers (VCSELs) [Dataset]

Marko, Igor (2015) Physical properties and characteristics of III-V lasers on silicon [Dataset]

Marko, IP and Sweeney, SJ Optical gain in GaAsBi/GaAs quantum well diode lasers [Dataset]

This list was generated on Thu Sep 21 14:28:20 2017 UTC.

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