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Items where Author is "Lourenco, M"

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Article

Lourenco, MD, Hughes, MA, Lai, KT, Sofi, IM, Ludurczak, W, Wong, L, Gwilliam, RM and Homewood, KP (2016) Silicon-Modified Rare-Earth Transitions - a New Route to Near- and Mid-IR Photonics Advanced Functional Materials, 26. pp. 1986-1994.

Lourenco, MA, Ludurczak, W, Prins, AD, Milosavljevic, M, Gwilliam, RM and Homewood, KP (2015) Light emission from rare-earths in dislocation engineered silicon substrates JAPANESE JOURNAL OF APPLIED PHYSICS, 54 (7), ARTN 07JB0.

Homewood, KP and Lourenco, MA (2015) OPTOELECTRONICS The rise of the GeSn laser NATURE PHOTONICS, 9 (2). pp. 78-79.

Hughes, MA, Lourenco, MA, Carey, JD, Ben, M and Homewood, KP (2014) Crystal field analysis of Dy and Tm implanted silicon for photonic and quantum technologies OPTICS EXPRESS, 22 (24). pp. 29292-29303.

Berhanuddin, DD, Lourenco, MA, Jeynes, C, Milosavljevic, M, Gwilliam, RM and Homewood, KP (2012) Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre JOURNAL OF APPLIED PHYSICS, 112 (10), ARTN 1.

Berhanuddin, DD, Lourenco, MA, Gwilliam, RM and Homewood, KP (2012) Co-Implantation of Carbon and Protons: An Integrated Silicon Device Technology Compatible Method to Generate the Lasing G-Center ADVANCED FUNCTIONAL MATERIALS, 22 (13). pp. 2709-2712.

Milosavljevic, M, Lourenco, MA, Gwilliam, RM and Homewood, KP (2011) Role of heavy ion co-implantation and thermal spikes on the development of dislocation loops in nanoengineered silicon light emitting diodes JOURNAL OF APPLIED PHYSICS, 110 (3), ARTN 0.

Milosavljevic, M, Wong, L, Lourenco, M, Valizadeh, R, Colligon, J, Shao, G and Homewood, K (2010) Correlation of Structural and Optical Properties of Sputtered FeSi2 Thin Films JAPANESE JOURNAL OF APPLIED PHYSICS, 49 (8), ARTN 08140.

Sun, CM, Tsang, HK, Wong, SP, Cheung, WY, Ke, N, Lourenco, MA and Homewood, KP (2009) Electroluminescence from metal-oxide-silicon tunneling diode with ion-beam-synthesized beta-FeSi2 precipitates embedded in the active region NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 267 (7). pp. 1081-1084.

Lourenco, MA and Homewood, KP (2008) Dislocation-engineered silicon light emitters for photonic integration SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 23 (6), ARTN 06400.

Lourenco, MA, Gwilliam, RM and Homewood, KP (2008) Silicon light emitting diodes emitting over the 1.2-1.4 mu m wavelength region in the extended optical communication band APPLIED PHYSICS LETTERS, 92 (16), ARTN 1.

Wong, L, Milosavljevic, M, Lourenco, MA, Shao, G, Valizadeh, R, Colligon, JS and Homewood, KP (2008) Annealing and deposition temperature dependence of the bandgap of amorphous FeSi(2) fabricated by co-sputter deposition SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 23 (3), ARTN 03500.

Lourenco, MA, Gwilliam, RM and Homewood, KP (2007) Extraordinary optical gain from silicon implanted with erbium APPLIED PHYSICS LETTERS, 91 (14), ARTN 1.

Gao, Y, Shao, GS, Li, Q, Xu, YM, Wong, SP, Zhou, MY, Lourenco, MA and Homewood, KP (2007) Microstructural and optical properties of semiconducting MnSi1.7 synthesized by ion implantation JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46 (9A). pp. 5777-5779.

Milosavljevic, M, Lourenco, MA, Shao, G, Gwilliam, RM and Homewood, KP (2006) Optimising dislocation-engineered silicon light-emitting diodes APPLIED PHYSICS B-LASERS AND OPTICS, 83 (2). pp. 289-294.

Milosavljevic, M, Shao, G, Lourenco, MA, Gwilliam, RM, Homewood, KP, Edwards, SP, Valizadeh, R and Colligon, JS (2005) Transition from amorphous to crystalline beta phase in co-sputtered FeSi2 films as a function of temperature JOURNAL OF APPLIED PHYSICS, 98 (12), ARTN 1.

Lourenco, MA, Milosavljevic, M, Gwilliam, RM, Homewood, KP and Shao, G (2005) On the role of dislocation loops in silicon light emitting diodes APPLIED PHYSICS LETTERS, 87 (20), ARTN 2.

Milosavljevic, M, Shao, G, Lourenco, MA, Gwilliam, RM and Homewood, KP (2005) Engineering of boron-induced dislocation loops for efficient room-temperature silicon light-emitting diodes JOURNAL OF APPLIED PHYSICS, 97 (7), ARTN 0.

Chow, CF, Gao, Y, Wong, SP, Ke, N, Li, Q, Cheung, WY, Shao, G, Lourenco, MA and Homewood, KP (2005) Photoluminescence and electroluminescence properties of FeSi2-Si structures formed by MEVVA implantation Amorphous and Nanocrystalline Silicon Science and Technology-2005, 862. pp. 507-512.

Chow, CF, Gao, Y, Wong, SP, Ke, N, Li, Q, Cheung, WY, Shao, G, Lourenco, MA and Homewood, KP (2005) Structures and light emission properties of ion beam synthesized FeSi2 in silicon Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems II, 5650. pp. 17-22.

Lourenco, MA, Siddiqui, MSA, Shao, G, Gwilliam, RM and Homewood, KP (2004) Ion beam fabricated silicon light emitting diodes PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 201 (2). pp. 239-244.

Homewood, KP, Lourenco, MA, Ng, WL, Gwilliam, RM, Shao, G and Ledain, S (2002) Novel light emitting diodes in silicon Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest.

Ng, WL, Lourenco, MA, Gwilliam, RM, Ledain, S, Shao, G and Homewood, KP (2001) An efficient room-temperature silicon-based light-emitting diode (vol 410, pg 192, 2001) NATURE, 414 (6862). p. 470.

Lourenco, MA, Butler, TM, Kewell, AK, Gwilliam, RM, Kirkby, KJ and Homewood, KP (2001) Electroluminescence of beta-FeSi2 light emitting devices JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 40 (6A). pp. 4041-4044.

Ng, WL, Lourenco, MA, Gwilliam, RM, Ledain, S, Shao, G and Homewood, KP (2001) An efficient room-temperature silicon-based light-emitting diode NATURE, 410 (6825). pp. 192-194.

Lourenco, MA, Gardiner, DJ, Gouvernayre, V, Bowden, M, Hedley, J and Wood, D (2000) Alleviation of temperature effects in the Raman micro-spectroscopy of boron doped silicon microstructures JOURNAL OF MATERIALS SCIENCE LETTERS, 19 (9). pp. 771-773.

Lourenco, MA, Gardiner, DJ, Bowden, M, Hedley, J and Wood, D (2000) Stress analysis of B doped silicon bridges and cantilever structures by Raman spectroscopy JOURNAL OF MATERIALS SCIENCE LETTERS, 19 (9). pp. 767-769.

Knights, AP, Lourenco, MA, Homewood, KP, Morrison, DJ, Wright, NG, Ortolland, S, Johnson, CM, O'Neill, AG, Coleman, PG, Hilton, KP and Uren, MJ (2000) Low temperature annealing of 4H-SiC Schottky diode edge terminations formed by 30 keV Ar+ implantation JOURNAL OF APPLIED PHYSICS, 87 (8). pp. 3973-3977.

Sharpe, JS, Chen, YL, Gwilliam, RM, Kewell, AK, McKinty, CN, Lourenco, MA, Shao, G, Homewood, KP and Kirkby, KR (1999) Ion beam synthesized Ru2Si3 APPLIED PHYSICS LETTERS, 75 (9). pp. 1282-1283.

Lourenco, MA, Ng, WL, Homewood, KP and Durose, K (1999) A deep semiconductor defect with continuously variable activation energy and capture cross section APPLIED PHYSICS LETTERS, 75 (2). pp. 277-279.

Pacheco, FJ, Araujo, D, Molina, SI, Garcia, R, Sacedon, A, Gonzalez-Sanz, F, Calleja, E, Kidd, P and Lourenco, MA (1998) Characterisation by TEM and X-ray diffraction of linearly graded composition InGaAs buffer layers on (001) GaAs MATERIALS SCIENCE AND TECHNOLOGY, 14 (12). pp. 1273-1278.

Lourenco, MA, Yew, YK, Homewood, KP, Durose, K, Richter, H and Bonnet, D (1997) Deep level transient spectroscopy of CdS/CdTe thin film solar cells JOURNAL OF APPLIED PHYSICS, 82 (3). pp. 1423-1426.

Niby, MA, Li, DQ, Lourenco, MA, Nejim, A, Homewood, KP, Hemment, PLF, Ishidida, E, Current, M, Banerjee, S, Larson, L, Mehta, S, Tasch, A, Smith, TC and Romig, T (1997) The lifetime distribution of excess carriers in H+ ion implanted silicon by photoconductive frequency resolved spectroscopy ION IMPLANTATION TECHNOLOGY - 96. pp. 668-671.

Kidd, P, Dunstan, DJ, Colson, HG, Lourenco, MA, Sacedon, A, GonzalezSanz, F, Gonzalez, L, Gonzalez, Y, Garcia, R, Gonzalez, D, Pacheco, FJ and Goodhew, PJ (1996) Comparison of the crystalline quality of step-graded and continuously graded InGaAs buffer layers JOURNAL OF CRYSTAL GROWTH, 169 (4). pp. 649-659.

Lourenco, MA and Dunstan, DJ (1996) Interpretation of double-crystal x-ray rocking curves in relaxed strained-layer structures JOURNAL OF APPLIED PHYSICS, 79 (6). pp. 3011-3015.

Conference or Workshop Item

Milosavljevic, M, Lourenco, MA, Shao, G, Gwilliam, RM and Homewood, KP (2008) Formation of dislocation loops in silicon by ion irradiation for silicon light emitting diodes In: 9th European Conference on Accelerators in Applied Research and Technology, 2007-09-03 - 2007-09-07, Florence, ITALY.

Gao, Y, Chen, RS, Zhou, MY, Lourenco, MA, Homewood, KP and Shao, G (2008) Structural, electronic, and optical properties of Mn4Si 7 In: Sixth International Conference on Thin Film Physics and Applications (TFPA 2007), 2007-09-25 - 2007-09-28, Shanghai, China.

Lourenco, MA, Milosavljevic, M, Shao, G, Gwilliam, RM and Homewood, KP (2007) Dislocation engineered silicon light emitting devices In: Asia-Pacific Conference on Semiconducting Silicides, 2006-07-29 - 2006-07-31, Kyoto, JAPAN.

Wong, SP, Chow, CF, Roller, J, Chong, YT, Li, Q, Lourenco, MA and Homewood, KP (2007) Structures and light emission properties of nanocrystalline FeSi2/Si formed by ion beam synthesis with a metal vapor vacuum arc ion source In: Asia-Pacific Conference on Semiconducting Silicides, 2006-07-29 - 2006-07-31, Kyoto, JAPAN.

Ishibashi, Y, Kobayashi, T, Prins, AD, Nakahara, J, Lourenco, MA, Gwilliam, RM and Homewood, KP (2007) Excitation and pressure effects on photoluminescence from dislocation engineered silicon material In: 12th International Conference on High Pressure Semiconductor Physics (HPSP-12), 2006-07-31 - 2006-08-03, Barcelona, SPAIN.

Lourenco, MA, Milosavljevic, M, Shao, G, Gwilliam, RM and Homewood, KP (2006) Boron engineered dislocation loops for efficient room temperature silicon light emitting diodes In: 3rd International Conference on Materials for Advanced Technologies/9th International Conference on Advanced Materials, 2005-07-03 - 2005-07-08, Singapore, SINGAPORE.

Gwilliam, R, Lourenco, MA, Milosavljevic, M, Homewood, KP and Shao, G (2005) Dislocation engineering for Si-based light emitting diodes In: Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting, 2005-05-31 - 2005-06-03, Strasbourg, FRANCE.

Chow, CF, Wong, SP, Gao, Y, Ke, N, Li, Q, Cheung, WY, Lourenco, MA and Homewood, KP (2005) Electroluminescence properties of Si MOS structures with incorporation of FeSi2 precipitates formed by iron implantation In: Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting, 2005-05-31 - 2005-06-03, Strasbourg, FRANCE.

Galata, SF, Lourenco, MA, Gwilliam, RM and Homewod, KP (2005) Sulphur doped silicon light emitting diodes In: Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting, 2005-05-31 - 2005-06-03, Strasbourg, FRANCE.

Lourenco, MA, Milosavljevic, M, Galata, S, Siddiqui, MSA, Shao, G, Gwilliam, RM and Homewood, KP (2005) Silicon-based light emitting devices In: 5th International Conference on Ion Implantation and Other Applications of Ions and Electrons (ION2004), 2004-06-14 - 2004-06-17, Kazimierz Dolny, POLAND.

Homewood, KP, Lourenco, MA, Milosavljevic, M, Shao, G and Gwilliam, RM (2005) Dislocation engineered silicon for light emission

Prins, AD, Ishibashi, Y, Sasahara, S, Nakahara, J, Lourenco, MA, Gwilliam, RM, Kobayashi, T, Nagata, A and Homewood, KP (2004) Silicon-based light emitting diode material studied under high pressure In: 11th International Conference on High-Pressure Semiconductor Physics (HPSP-11), 2004-08-02 - 2004-08-05, Berkeley, CA.

Lourenco, MA, Milosavljevic, M, Gwilliam, RM, Shao, G and Homewood, KP (2004) Experimental and theoretical study of the electroluminescence temperature dependence of iron disilicide light-emitting devices In: 8th IUMRS International Conference on Advanced Materials (ICAM 2003), 2003 - ?, Yokohama, JAPAN.

Milosavljevic, M, Shao, G, Gwilliam, RM, Gao, Y, Lourenco, MA, Valizadeh, R, Colligon, JS and Homewood, KP (2004) Semiconducting amorphous FeSi2 layers synthesized by co-sputter deposition In: 8th IUMRS International Conference on Advanced Materials (ICAM 2003), 2003 - ?, Yokohama, JAPAN.

Milosavljevic, M, Lourenco, MA, Siddiqui, MSA, Shao, G, Gwilliam, RM and Homewood, KP (2004) TEM studies of dislocation-based silicon light emitting devices In: Institute-of-Physics-Electron-Microscopy and Analysis-Group Conference (EMAG 2003), 2003-09-03 - 2003-09-05, Univ Oxford, Examinat Sch, Oxford, ENGLAND.

Lourenco, MA, Gwilliam, RM, Shao, G and Homewood, KP (2003) Dislocation engineered beta-FeSi2 light emitting diodes In: 13th International Conference on Ion Beam Modification of Materials, 2002-09-01 - 2002-09-06, KOBE, JAPAN.

Lourenco, MA, Siddiqui, MSA, Gwilliam, RM, Shao, G and Homewood, KP (2003) Efficient silicon light emitting diodes made by dislocation engineering In: Spring Meeting of the European-Materials-Research-Society (E-MRS), 2002-06-18 - 2002-06-21, STRASBOURG, FRANCE.

Lourenco, MA, Siddiqui, MSA, Shao, G, Gwilliam, RM and Homewood, KP (2003) Dislocation-based silicon light emitting devices In: Conference of the NATO Advanced Research Workshop on Towards the First Silicon Laser, 2002-09-21 - 2002-09-26, TRENT, ITALY.

Lourenco, MA, Ng, WL, Shao, G, Gwilliam, RM and Homewood, KP (2002) Dislocation engineered silicon light emitting diodes In: Silicon-based and Hybrid Optoelectronics IV Conference, 2002-01-23 - 2002-01-24, SAN JOSE, CA.

Gwilliam, R, Lourenco, MA, Galata, S, Homewood, KP and Shao, G (2002) Efficient optical sources in silicon using dislocation engineering In: 8th Conference on Photonics for Space Environments VIII, 2002-07-09 - 2002-07-10, SEATTLE, WA.

Lourenco, MA, Gwilliam, RM, Shao, G and Homewood, KP (2002) Efficient silicon light emitting diodes made by dislocation engineering In: Symposium on Defect and Impurity Engineered Semiconductors and Devices III held at the 2002 MRS Spring Meeting, 2002-04-01 - 2002-04-05, SAN FRANCISCO, CA.

Lourenco, MA, Butler, TM, Kewell, AK, Gwilliam, RM, Kirkby, KJ and Homewood, KP (2001) Electrical, electronic and optical characterisation of ion beam synthesised beta-FeSi2 light emitting devices In: 12th International Conference on Ion Beam Modification of Materials (IBMM2000), 2000-09-03 - 2000-09-08, CANELA, BRAZIL.

Lourenco, MA, Knights, AP, Homewood, KP, Gwilliam, RM, Simpson, PJ and Mascher, P (2001) A comparative study of vacancies produced by proton implantation of silicon using positron annihilation and deep level transient spectroscopy In: 12th International Conference on Ion Beam Modification of Materials (IBMM2000), 2000-09-03 - 2000-09-08, CANELA, BRAZIL.

Homewood, KP, Reeson, KJ, Gwilliam, RM, Kewell, AK, Lourenco, MA, Shao, G, Chen, YL, Sharpe, JS, McKinty, CN and Butler, T (2001) Ion beam synthesized silicides: growth, characterization and devices In: 46th Spring Meeting of the Japan-Society-of-Applied-Physics, 1999 - ?, CHIBA, JAPAN.

Sharpe, JS, Chen, YL, Gwilliam, RM, Kewell, AK, Ledain, S, McKinty, CN, Lourenco, MA, Butler, T, Homewood, KP, Kirkby, KJR and Shao, G (2000) Structural characterisation of ion beam synthesised Ru2Si3 In: 14th International Conference on Ion Beam Analysis/6th European Conference on Accelerators in Applied Research and Technology, 1999-07-26 - 1999-07-30, DRESEDEN, GERMANY.

McKinty, CN, Kewell, AK, Sharpe, JS, Lourenco, MA, Butler, TM, Valizadeh, R, Colligon, JS, Kirkby, KJR and Homewood, KP (2000) The optical properties of beta-FeSi2 fabricated by ion beam assisted sputtering In: 14th International Conference on Ion Beam Analysis/6th European Conference on Accelerators in Applied Research and Technology, 1999-07-26 - 1999-07-30, DRESEDEN, GERMANY.

Kewell, AK, Lourenco, MA, Gwilliam, RM, Sharpe, J, McKinty, C, Butler, T, Kirkby, KJR and Homewood, KP (2000) Light-emitting diodes fabricated in silicon/iron disilicide In: 2nd Conference on Silicon-Based Optoelectronics, 2000-01-28 - ?, SAN JOSE, CA.

Knights, AP, Morrison, DJ, Wright, NG, Johnson, CM, O'Neill, AG, Ortolland, S, Homewood, KP, Lourenco, MA, Gwilliam, RM and Coleman, PG (1999) The effect of annealing on argon implanted edge terminations for 4H-SiC Schottky diodes In: Symposium on Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications-1999 at the 1999 MRS Spring Meeting, 1999-04-05 - 1999-04-08, SAN FRANCISCO, CA.

Bowden, M, Gardiner, DJ, Lourenco, MA, Hedley, J, Wood, D, Burdess, JS and Harris, AJ (1998) Dopant mapping and strain analysis in B doped silicon structures using micro-Raman spectroscopy In: Symposium on Microelectromechanical Structures for Materials Research, 1998-04-15 - 1998-04-16, SAN FRANCISCO, CA.

Beanland, R, Lourenco, MA and Homewood, KP (1997) Relaxation of strained epitaxial layers by dislocation rotation, reaction and generation during annealing In: Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials, 1997-04-07 - 1997-04-10, UNIV OXFORD, OXFORD, ENGLAND.

Nohavica, D, Gladkov, P, Lourenco, MA, Yang, Z, Homewood, KP and Ehrentraut, D (1996) Meander type LPE - New approach to growth InP and GaInAsP layers In: 8th International Conference on Indium Phosphide and Related Materials, 1996-04-21 - 1996-04-25, SCHWABISCH GMUND, GERMANY.

Thesis

Lourenco, Manon d'Assuncao (1991) Evaluation of Simox Substrates using Photoconductive Frequency Resolved Spectroscopy Doctoral thesis, University of Surrey.

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