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Items where Author is "Krier, A"

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Article

Cheetham, KJ, Krier, A, Marko, IP, Aldukhayel, A and Sweeney, SJ (2011) Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes APPL PHYS LETT, 99 (14), 141110.

Yin, M, Nash, G R, Coomber, S D, Buckle, L, Carrington, P J, Krier, A, Andreev, A, Przeslak, S J, de Valicourt, G, Smith, S J, Emeny, M T and Ashley, T (2008) GaInSb/AlInSb Multi-Quantum-Wells for Mid-Infrared Lasers Applied Physics Letters, 93 (12).

Nash, G R, Smith, S J, Coomber, S D, Przeslak, S, Andreev, A, Carrington, P, Yin, M, Krier, A, Buckle, L, Emeny, M T and Ashley, T (2007) Midinfrared GaInSb/AlGaInSb Quantum Well Laser Diodes Grown on GaAs Applied Physics Letters, 91 (13).

Cripps, S A, Hosea, T J, Krier, A, Smirnov, V, Batty, P J, Zhuang, Q D, Lin, H H, Liu, P W and Tsai, G (2007) Midinfrared Photoreflectance Study of InAs-rich InAsSb and GaInAsPSb Indicating Negligible Bowing for the Spin Orbit Splitting Energy Applied Physics Letters, 90 (17).

Choulis, S. A., Andreev, A., Merrick, M., Adams, A. R., Murdin, B. N., Krier, A. and Sherstnev, V. V. (2003) High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 µm Applied Physics Letters, 1149 (2003).

Choulis, S A, Andreev, A, Merrick, M, Adams, A R, Murdin, B N, Krier, A and Sherstnev, V V (2003) High-Pressure Measurements of Mid-Infrared Electroluminescence from InAs Light-Emitting Diodes at 3.3&#956m Applied Physics Letters, 82 (8). pp. 1149-1151.

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