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Items where Author is "Knights, A"

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Article

Ishii, M, Crowe, IF, Halsall, MP, Knights, AP, Gwilliam, RM and Hamilton, B (2014) Luminescence quenching of conductive Si nanocrystals via "Linkage emission": Hopping-like propagation of infrared-excited Auger electrons JOURNAL OF APPLIED PHYSICS, 116 (6), ARTN 06351.

Marques, LA, Aboy, M, Dudeck, KJ, Botton, GA, Knights, AP and Gwilliam, RM (2014) Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon JOURNAL OF APPLIED PHYSICS, 115 (14), ARTN 14351.

Ishii, M, Crowe, IF, Halsall, MP, Knights, AP, Gwilliam, RM and Hamilton, B (2014) Electrical observation of non-radiative recombination in Er doped Si nano-crystals during thermal quenching of intra-4f luminescence JAPANESE JOURNAL OF APPLIED PHYSICS, 53 (3), ARTN 03130.

Dudeck, KJ, Huante-Ceron, E, Knights, AP, Gwilliam, RM and Botton, GA (2013) Direct observation of indium precipitates in silicon following high dose ion implantation SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28 (12), ARTN 12501.

Yang, P, Gwilliam, RM, Crowell, IF, Papachristodoulou, N, Halsall, MP, Hylton, NP, Hulko, O, Knights, AP, Shah, M and Kenyon, AJ (2013) Size limit on the phosphorous doped silicon nanocrystals for dopant activation NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 307. pp. 456-458.

Dudeck, KJ, Marques, LA, Knights, AP, Gwilliam, RM and Botton, GA (2013) Sub-angstrom Experimental Validation of Molecular Dynamics for Predictive Modeling of Extended Defect Structures in Si PHYSICAL REVIEW LETTERS, 110 (16), ARTN 16610.

Crowe, IF, Papachristodoulou, N, Halsall, MP, Hylton, NP, Hulko, O, Knights, AP, Yang, P, Gwilliam, RM, Shah, M and Kenyon, AJ (2013) Donor ionization in size controlled silicon nanocrystals: The transition from defect passivation to free electron generation JOURNAL OF APPLIED PHYSICS, 113 (2), ARTN 02430.

Ishii, M, Crowe, IF, Halsall, MP, Knights, AP, Gwilliam, RM and Hamilton, B (2012) Investigation of the thermal charge "trapping-detrapping" in silicon nanocrystals: Correlation of the optical properties with complex impedance spectra APPLIED PHYSICS LETTERS, 101 (24), ARTN 24210.

Coleman, PG, Edwardson, CJ, Knights, AP and Gwilliam, RM (2012) Vacancy-type defects created by single-shot and chain ion implantation of silicon NEW JOURNAL OF PHYSICS, 14, ARTN 02500.

Coleman, PG, Nash, D, Edwardson, CJ, Knights, AP and Gwilliam, RM (2011) The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron annihilation spectroscopy JOURNAL OF APPLIED PHYSICS, 110 (1), ARTN 0.

Crowe, IF, Halsall, MP, Hulko, O, Knights, AP, Gwilliam, RM, Wojdak, M and Kenyon, AJ (2011) Probing the phonon confinement in ultrasmall silicon nanocrystals reveals a size-dependent surface energy JOURNAL OF APPLIED PHYSICS, 109 (8), ARTN 0.

Knights, AP, Bradley, JDB, Hulko, O, Stevanovic, DV, Edwards, CJ, Kallis, A, Coleman, PG, Crowe, IF, Halsall, MP and Gwilliam, RM (2011) Probing the formation of silicon nano-crystals (Si-ncs) using variable energy positron annihilation spectroscopy Journal of Physics: Conference Series, 262 (1).

Thomson, D, Reed, G, Knights, A, Yang, P, Gardes, F, Smith, A and Litvinenko, K (2010) Total internal reflection optical switch in SOI with defect engineered barrier region Journal of Lightwave Technology, 28 (17). pp. 2483-2491.

Crowe, IF, Kashtiban, RJ, Sherliker, B, Bangert, U, Halsall, MP, Knights, AP and Gwilliam, RM (2010) Spatially correlated erbium and Si nanocrystals in coimplanted SiO2 after a single high temperature anneal JOURNAL OF APPLIED PHYSICS, 107 (4), ARTN 04431.

Doylend, JK, Knights, AP, Luff, BJ, Shafiiha, R, Asghari, M and Gwilliam, RM (2010) Modifying functionality of variable optical attenuator to signal monitoring through defect engineering ELECTRONICS LETTERS, 46 (3). pp. 234-235.

Milošević, MM, Mashanovich, GZ, Gardes, FY, Hu, Y, Knights, AP, Tarr, NG and Reed, GT (2010) Athermal and low loss ridge silicon waveguides Proceedings of SPIE - The International Society for Optical Engineering, 7606.

Halsall, MP, Crowe, IF, Hylton, NP, Hulko, O, Knights, AP, Ruffell, S, Gwilliam, RM, Wojdak, M and Kenyon, AJ (2010) Novel processing for Si-nanocrystal based photonic materials ECS Transactions, 28 (3). pp. 3-13.

Kashtiban, RJ, Bangert, U, Crowe, I, Halsall, P, Sherliker, B, Harvey, J, Eccles, J, Knights, AP, Gwilliam, R and Gass, M (2010) Structural and compositional study of Erbium-doped silicon nanocrystals by HAADF, EELS and HRTEM techniques in an aberration corrected STEM Journal of Physics: Conference Series, 209.

Logan, DF, Jessop, PE, Knights, AP and Gwilliam, RM (2009) The use of deep-level dopants in silicon-on-insulator optical waveguide modulators Optics InfoBase Conference Papers.

Smith, AJ, Gwilliam, RM, Stolojan, V, Knights, AP, Coleman, PG, Kallis, A and Yeong, SH (2009) Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates J APPL PHYS, 106 (10), 103514.

Wright, NM, Thomson, DJ, Litvinenko, KL, Headley, WR, Smith, AJ, Knights, AP, Deane, JHB, Gardes, FY, Mashanovich, GZ, Gwilliam, R and Reed, GT (2009) Free carrier lifetime modification in silicon Proceedings of SPIE - The International Society for Optical Engineering, 7220.

Roschuk, T, Wilson, PRJ, Li, J, Dunn, KA, Wojcik, J, Crowe, IF, Gwilliam, RM, Halsall, MP, Knights, AP and Mascher, P (2009) Structure and luminescence of rare earth-doped silicon oxides studied through XANES and XEOL ECS Transactions, 25 (9). pp. 213-222.

Wright, NM, Thomson, DJ, Litvinenko, KL, Headley, WR, Smith, AJ, Knights, AP, Deane, JHB, Gardes, FY, Mashanovich, GZ, Gwilliam, R and Reed, GT (2008) Free carrier lifetime modification for silicon waveguide based devices OPT EXPRESS, 16 (24). pp. 19779-19784.

Thomson, D, Gardes, FY, Mashanovich, GZ, Knights, AP and Reed, GT (2008) Using SiO2 carrier confinement in total internal reflection optical switches to restrict carrier diffusion in the guiding layer JOURNAL OF LIGHTWAVE TECHNOLOGY, 26 (9-12). pp. 1288-1294.

Knights, AP, Bulk, MP, Jessop, PE, Waugh, P, Loiacono, R, Mashanovich, GZ, Reed, GT and Gwilliam, RM (2008) Optical filters utilizing ion implanted Bragg gratings in SOI waveguides Advances in Optical Technologies, 2008, 276165.

Knights, A P, Bulk, M P, Jessop, P E, Waugh, P, Loiacono, R, Mashanovich, G Z, Reed, G T and Gwilliam, R M (2008) Optical Filters Utilizing Ion Implanted Bragg Gratings in SOI Waveguides Advances in Optical Technologies, 2008.

Gardes, FY, Reed, GT, Knights, AP, Mashanovich, G, Jessop, PE, Rowe, L, McFaul, S, Bruce, D and Tarr, NG (2008) Sub-micron optical waveguides for silicon photonics formed via the Local Oxidation of Silicon (LOCOS) - art. no. 68980R SILICON PHOTONICS III, 6898. R8980-R8980.

Gardes, FY, Reed, GT, Knights, AP, Mashanovich, G, Jessop, PE, Rowe, L, McFaul, S, Bruce, D and Tarr, NG (2008) Sub-micron optical waveguides for silicon photonics formed via the local oxidation of silicon (LOCOS) Proceedings of SPIE - The International Society for Optical Engineering, 6898. 68980R.1-168980R.4.

Mathieu, MG, Knights, AJ, Pawelec, G, Riley, CL, Wernet, D, Lemonnier, FA, Straten, PT, Mueller, L, Rees, RC and McArdle, SE (2007) HAGE, a cancer/testis antigen with potential for melanoma immunotherapy: identification of several MHC class I/II HAGE-derived immunogenic peptides. Cancer Immunol Immunother, 56 (12). pp. 1885-1895.

Milgram, JN, Knights, AP, Homewood, KP and Gwilliam, RM (2007) Considerations for interpretation of luminescence from silicon-on-insulator light emitting structures SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 22 (10). pp. 1104-1110.

Surkova, T, Patane, A, Eaves, L, Main, PC, Henini, M, Polimeni, A, Knights, AP and Jeynes, C (2001) Indium interdiffusion in annealed and implanted InAs/(AlGa)As self-assembled quantum dots JOURNAL OF APPLIED PHYSICS, 89 (11). pp. 6044-6047.

Curry, RJ, Gillin, WP, Knights, AP and Gwilliam, R (2001) 1.5 μm electroluminescence from organic light emitting diodes integrated on silicon substrates Optical Materials, 17 (1-2). pp. 161-163.

Curry, RJ, Gillin, WP, Somerton, M, Knights, AP and Gwilliam, R (2001) Hybrid silicon-organic light emitting diodes for 1.5 μm optoelectronics Proceedings of SPIE - The International Society for Optical Engineering, 4105. pp. 265-271.

Curry, RJ, Gillin, WP, Knights, AP and Gwilliam, R (2000) Silicon-based organic light-emitting diode operating at a wavelength of 1.5 μm Applied Physics Letters, 77 (15). pp. 2271-2273.

Sellin, PJ, Breese, MBH, Knights, AP, Alves, LC, Sussmann, RS and Whitehead, AJ (2000) Imaging of charge transport in polycrystalline diamond using ion-beam-induced charge microscopy APPLIED PHYSICS LETTERS, 77 (6). pp. 913-915.

Knights, AP, Lourenco, MA, Homewood, KP, Morrison, DJ, Wright, NG, Ortolland, S, Johnson, CM, O'Neill, AG, Coleman, PG, Hilton, KP and Uren, MJ (2000) Low temperature annealing of 4H-SiC Schottky diode edge terminations formed by 30 keV Ar+ implantation JOURNAL OF APPLIED PHYSICS, 87 (8). pp. 3973-3977.

Nejim, A, Gwilliam, RM, Emerson, NG, Knights, AP, Cristiano, F, Barradas, NP and Jeynes, C (1999) Electrical behaviour associated with defect tails in germanium implanted silicon Proceedings of the International Conference on Ion Implantation Technology, 1. pp. 506-509.

Barradas, NP, Knights, AP, Jeynes, C, Mironov, OA, Grasby, TJ and Parker, EHC (1999) High-depth-resolution Rutherford backscattering data and error analysis of SiGe systems using the simulated annealing and Markov chain Monte Carlo algorithms PHYSICAL REVIEW B, 59 (7). pp. 5097-5105.

Barradas, NP, Almeida, SA, Jeynes, C, Knights, AP, Silva, SRP and Sealy, BJ (1999) RBS and ERDA study of ion beam synthesised amorphous gallium nitride NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 148 (1-4). pp. 463-467.

Nejim, A., Cristiano, F., Knights, A. P., Barradas, N. P., Hemment, P. L. F. and Coleman, P. G. (1998) Dose rate dependence of residual defects in device grade Si/SiGe heterostructures formed by ion beam synthesis Proceedings of the 1998 International Conference on Ion Implantation Technology, 2. pp. 692-695.

Nejim, A, Knights, AP, Jeynes, C, Coleman, PG and Patel, CJ (1998) Profile broadening of high dose germanium implants into (100) silicon at elevated temperatures due to channeling JOURNAL OF APPLIED PHYSICS, 83 (7). pp. 3565-3573.

Webb, RP, Foad, MA, Gwilliam, RM, Knights, AP and Thomas, G (1997) Anomalous diffusion of ultra low energy boron implants in silicon DEFECTS AND DIFFUSION IN SILICON PROCESSING, 469. pp. 59-63.

Conference or Workshop Item

Crowe, IF, Hulko, O, Knights, AP, Hylton, NP, Halsall, MP, Ruffell, S and Gwilliam, RM (2010) Formation of Si-nanocrystals in SiO2 via ion implantation and rapid thermal processing In: Silicon Photonics V, 2010-01-24 - 2010-01-27, San Francisco, USA.

Hylton, NP, Crowe, IF, Knights, AP, Halsall, MP, Ruffell, S and Gwilliam, RM (2010) Optical spectroscopy of Er doped Si-nanocrystals on sapphire substrates fabricated by ion implantation into SiO2 In: Silicon Photonics V, 2010-01-24 - 2010-01-27, San Francisco, USA.

Milosevic, MM, Gardes, FY, Knights, AP, Tarr, NG, Mashanovich, GZ and Reed, GT (2009) Low loss LOCOS waveguides for silicon photonics In: Silicon Based Emission Technology (SiBET) Conference, 2009-06-14 - 2009-06-17, Manchester, UK.

Knights, AP, Milgrarn, JN, Wojcik, J, Mascher, P, Crowe, I, Sherliker, B, Halsall, MP and Gwilliam, RM (2009) Observation of non-radiative de-excitation processes in silicon nanocrystals In: 3rd International Conference on Optical, Optoelectronic and Photonic Materials and Applications, 2008-07-20 - 2008-07-25, Edmonton, CANADA.

Reed, GT, Mashanovich, G, Gardes, FY, Gwilliam, RM, Wright, NM, Thomson, DJ, Timotijevic, BD, Litvinenko, KL, Headley, WR, Smith, AJ, Knights, AP, Jessop, PE, Tarr, NG and Deane, JHB (2009) Silicon photonics at the University of Surrey In: Photonic Materials, Devices, and Applications III, 2009-05-04 - 2009-05-06, Dresden, Germany.

England, Jonathan, Kontos, Alexander, Renau, Anthony, Gwilliam, Russell, Smith, Andrew, Knights, Andrew, Jain, Amitabh, Seebauer, Edmund G., Felch, Susan B., Jain, Amitabh and Kondratenko, Yevgeniy V. (2008) The Effect of Amorphization Conditions on the Measured Activation of Source Drain Extension Implants In: Ion Implantation Technology 2008: 17th International Conference on Ion Implantation Technology, 8–13 Jun 2008, Monterey, USA.

Smith, AJ, Antwis, LD, Yeong, SH, Knights, AP, Colombeau, B, Sealy, BJ and Gwilliam, RM (2008) Junction Leakage Analysis of Vacancy Engineered Ultra-Shallow p-type Layers In: 17th International Conference on Ion Implantation Technology, 2008-06-08 - 2008-06-13, Monterey, CA.

Gardes, FY, Reed, GT, Knights, AP and Mashanovich, G (2008) Evolution of optical modulation using majority carrier plasma dispersion effect in SOI In: Silicon Photonics III, 2008-01-21 - 2008-01-24, San Jose, USA.

Wright, NM, Thomson, DJ, Litvinenko, KL, Headley, WR, Smith, AJ, Knights, AP, Gardes, FY, Mashanovich, GZ, Gwilliam, R and Reed, GT (2008) Free carrier lifetime modification for silicon waveguide based devices In: 5th IEEE GFP, 2008-09-17 - 2008-09-19, Cardiff, UK.

Logan, DF, Jessop, PE, Knights, AP, Gwilliam, RM and Halsall, MP (2008) The effect of doping type and concentration on optical absorption via implantation induced defects in silicon-on-insulator waveguides In: COMMAD 2008, 2008-07-28 - 2008-08-01, Sydney, Australia.

Thomson, D, Knights, AP, Walters, D, Mashanovih, GZ, Timotijevic, B, Gardes, FY and Reed, GT (2007) High performance total internal reflection type optical switches in silicon-on-insulator - art. no. 647713 In: Conference on Silicon Photonics II, 2007-01-22 - 2007-01-25, San Jose, CA.

Breese, MBH, Sellin, PJ, Alves, LC, Knights, AP, Sussmann, RS and Whitehead, AJ (2001) Imaging of charge transport properties in polycrystalline CVD diamond using IBIC and IBIL microscopy In: 7th International Conference on Nuclear Microprobe Technology and Applications, 2000-09-10 - 2000-09-15, BORDEAUX, FRANCE.

Galbiati, A, Breese, MBH, Knights, AP, Sealy, B and Sellin, PJ (2001) Characterisation of a coplanar CVD diamond radiation detector In: 2nd International Workshop on Radiation Imaging Detectors, 2000-07-02 - 2000-07-06, FREIBURG, GERMANY.

Lourenco, MA, Knights, AP, Homewood, KP, Gwilliam, RM, Simpson, PJ and Mascher, P (2001) A comparative study of vacancies produced by proton implantation of silicon using positron annihilation and deep level transient spectroscopy In: 12th International Conference on Ion Beam Modification of Materials (IBMM2000), 2000-09-03 - 2000-09-08, CANELA, BRAZIL.

Sellin, PJ, Rossi, G, Renzi, MJ, Knights, AP, Eikenberry, EF, Tate, MW, Barna, SL, Wixted, RL and Gruner, SM (2001) Performance of semi-insulating gallium arsenide X-ray pixel detectors with current-integrating readout In: 1st International Workshop on Radiation Imaging Detectors, 1999-06-13 - 1999-06-17, SUNDSVALL, SWEDEN.

Taylor, JW, Saleh, AS, Rice-Evans, PC, Knights, AP and Jeynes, C (1999) Depth profiling of defects in nitrogen implanted silicon using a slow positron beam In: 8th International Workshop on Slow-Positron Beam Techniques for Solids and Surfaces (SLOPOS-8), 1998-09-06 - 1998-09-12, CAPE TOWN, SOUTH AFRICA.

Knights, AP, Morrison, DJ, Wright, NG, Johnson, CM, O'Neill, AG, Ortolland, S, Homewood, KP, Lourenco, MA, Gwilliam, RM and Coleman, PG (1999) The effect of annealing on argon implanted edge terminations for 4H-SiC Schottky diodes In: Symposium on Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications-1999 at the 1999 MRS Spring Meeting, 1999-04-05 - 1999-04-08, SAN FRANCISCO, CA.

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