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Items where Author is "Kah, M"

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Number of items: 9.

Article

Giubertoni, D, Pepponi, G, Sahiner, MA, Kelty, SP, Gennaro, S, Bersani, M, Kah, M, Kirkby, KJ, Doherty, R, Foad, MA, Meirer, F, Streli, C, Woicik, JC and Pianetta, P (2010) Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 28 (1). C1B1-C1B5.

Giubertoni, D, Pepponi, G, Gennaro, S, Bersani, M, Sahiner, MA, Kelty, SP, Doherty, R, Foad, MA, Kah, M, Kirkby, KJ, Woicik, JC and Pianetta, P (2008) Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon JOURNAL OF APPLIED PHYSICS, 104 (10), ARTN 10371.

Kah, M, Smith, AJ, Hamilton, JJ, Sharp, J, Yeong, SH, Colombeau, B, Gwilliam, R, Webb, RP and Kirkby, KJ (2008) Interaction of the end of range defect band with the upper buried oxide interface for B and BF2 implants in Si and silicon on insulator with and without preamorphizing implant JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 26 (1). pp. 347-350.

Bennett, NS, Cowern, NEB, Smith, AJ, Kah, M, Gwilliam, RM, Sealy, BJ, Noakes, TCQ, Bailey, P, Giubertoni, D and Bersani, M (2008) Differential Hall characterisation of ultrashallow doping in advanced Si-based materials Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 154-15 (1-3). pp. 229-233.

Ferri, M, Solmi, S, Giubertoni, D, Bersani, M, Hamilton, JJ, Kah, M, Kirkby, K, Collart, EJH and Cowern, NEB (2007) Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator JOURNAL OF APPLIED PHYSICS, 102 (10), ARTN 1.

Hamilton, JJ, Collart, EJH, Colombeau, B, Bersani, M, Giubertoni, D, Kah, M, Cowern, NEB and Kirkby, KJ (2006) Effect of B dose and Ge preamorphization energy on the electrical and structural properties of ultrashallow junctions in silicon-on-insulator Materials Research Society Symposium Proceedings, 912. pp. 45-50.

Conference or Workshop Item

Kah, M, Smith, AJ, Hamilton, JJ, Yeong, SH, Columbeau, B, Gwilliam, R, Webb, RP and Kirkby, KJ (2008) A Comparative Study of Interaction of End of Range (EOR) Defect Band with Upper Buried Oxide (BOX) Interface for B and BF(2) Implants in SOI and Bulk Silicon with Pre-Amorphizing Implant In: 17th International Conference on Ion Implantation Technology, 2008-06-08 - 2008-06-13, Monterey, CA.

Ferri, M, Solmi, S, Giubertoni, D, Bersani, M, Hamilton, JJ, Kah, M, Cowern, NEB, Kirkby, K and Collart, EJH (2007) Boron pile-up phenomena during ultra shallow junction formation

Hamilton, JJ, Collart, EJH, Colombeau, B, Bersani, M, Giubertoni, D, Kah, M, Cowern, NEB and Kirkby, KJ (2006) Effect of B dose and Ge prearnorphization energy on the electrical and structural properties of ultrashallow junctions in silicon-on-insulator In: Symposium on Sub Second Rapid Thermal Processing for Device Fabrication held at the 2006 MRS Spring Meeting, 2006-04-18 - 2006-04-19, San Francisco, CA.

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