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Article

Nidever, David L., Olsen, Knut, Walker, Alistair R., Vivas, A. Katherina, Blum, Robert D., Kaleida, Catherine, Choi, Yumi, Conn, Blair C., Gruendl, Robert A., Bell, Eric F., Besla, Gurtina, Muñoz, Ricardo R., Gallart, Carme, Martin, Nicolas F., Olszewski, Edward W., Saha, Abhijit, Monachesi, Antonela, Monelli, Matteo, de Boer, Thomas J. L., Johnson, L. Clifton, Zaritsky, Dennis, Stringfellow, Guy S., van der Marel, Roeland P., Cioni, Maria-Rosa L., Jin, Shoko, Majewski, Steven R., Martinez-Delgado, David, Monteagudo, Lara, Noel, Noelia, Bernard, Edouard J., Kunder, Andrea, Chu, You-Hua, Bell, Cameron P. M., Santana, Felipe, Frechem, Joshua, Medina, Gustavo E., Parkash, Vaishali, Navarrete, J. C. Serón and Hayes, Christian (2017) SMASH: Survey of the MAgellanic Stellar History The Astronomical Journal, 154 (5).

Broderick, CA, Jin, S, Marko, Igor, Hild, Konstanze, Ludewig, P, Bushell, Zoe, Stolz, W, Rorison, JM, O’Reilly, EP, Volz, K and Sweeney, Stephen (2017) GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics Scientific Reports, 7, 46371.

Jin, S, Corradi, V and Swanson, NR (2016) Robust forecast comparison Econometric Theory.

Martin, Nicolas F., Jungbluth, Valentin, Nidever, David L., Bell, Eric F., Besla, Gurtina, Blum, Robert D., Cioni, Maria-Rosa L., Conn, Blair C., Kaleida, Catherine C., Gallart, Carme, Jin, Shoko, Majewski, Steven R., Martinez-Delgado, David, Monachesi, Antonela, Muñoz, Ricardo R., Noel, Noelia, Olsen, Knut, Stringfellow, Guy S., van der Marel, Roeland P., Vivas, A. Katherina, Walker, Alistair R. and Zaritsky, Dennis (2016) SMASH 1: A Very Faint Globular Cluster Disrupting in the Outer Reaches of the LMC? Letters of the Astrophysical Journal, 830 (L10).

Marko, I, Broderick, CA, Jin, S, Ludewig, P, Stolz, W, Volz, K, Rorison, JM, O’Reilly, EP and Sweeney, SJ (2016) Optical gain in GaAsBi/GaAs quantum well diode lasers Scientific Reports, 6.

Simmons, RA, Jin, SR, Sweeney, SJ and Clowes, SK (2015) Enhancement of Rashba interaction in GaAs/AlGaAs quantum wells due to the incorporation of bismuth APPLIED PHYSICS LETTERS, 107 (14), ARTN 1.

Chai, GMT, Broderick, CA, O'Reilly, EP, Othaman, Z, Jin, SR, Petropoulos, JP, Zhong, Y, Dongmo, PB, Zide, JMO, Sweeney, SJ and Hosea, TJC (2015) Experimental and modelling study of InGaBiAs/InP alloys with up to 5.8% Bi, and with Delta(so) > E-g SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30 (9), ARTN 09401.

Marko, IP, Jin, SR, Hild, K, Batool, Z, Bushell, ZL, Ludewig, P, Stolz, W, Volz, K, Butkute, R, Pacebutas, V, Geizutis, A, Krotkus, A and Sweeney, SJ (2015) Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30 (9), ARTN 0.

Martin, NF, Nidever, DL, Besla, G, Olsen, K, Walker, AR, Vivas, AK, Gruendl, RA, Kaleida, CC, Muñoz, RR, Blum, RD, Saha, A, Conn, BC, Bell, EF, Chu, YH, Cioni, MRL, De Boer, TJL, Gallart, C, Jin, S, Kunder, A, Majewski, SR, Martinez-Delgado, D, Monachesi, A, Monelli, M, Monteagudo, L, Noël, NED, Olszewski, EW, Stringfellow, GS, Van Der Marel, RP and Zaritsky, D (2015) Hydra II: A Faint and Compact Milky Way Dwarf Galaxy Found in the Survey of the Magellanic Stellar History Astrophysical Journal Letters, 804 (1).

Marko, IP, Bushell, ZL, Jin, SR, Hild, K, Batool, Z, Sweeney, SJ, Ludewig, P, Reinhard, S, Nattermann, L, Stolz, W and Volz, K (2014) Physical properties and optimization of GaBiAs/(Al)GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi Journal of Physics D: Applied Physics, 47 (34).

Sweeney, SJ, Marko, IP, Jin, SR, Hild, K, Batool, Z, Ludewig, P, Natterman, L, Bushell, Z, Stolz, W, Volz, K, Broderick, CA, Usman, M, Harnedy, PE, Oreilly, EP, Butkute, R, Pacebutas, V, Geiutis, A and Krotkus, A (2014) Electrically injected GaAsBi quantum well lasers Conference Digest - IEEE International Semiconductor Laser Conference. pp. 80-81.

Jin, S and Sweeney, SJ (2013) InGaAsBi alloys on InP for efficient near- and mid-infrared light emitting devices JOURNAL OF APPLIED PHYSICS, 114 (21), ARTN 21310.

Batool, Z, Chatterjee, S, Chernikov, A, Duzik, A, Fritz, R, Gogineni, C, Hild, K, Hosea, TJC, Imhof, S, Johnson, SR, Jiang, Z, Jin, S, Koch, M, Koch, SW, Kolata, K, Lewis, RB, Lu, X, Masnadi-Shirazi, M, Millunchick, JM, Mooney, PM, Riordan, NA, Rubel, O, Sweeney, SJ, Thomas, JC, Thränhardt, A, Tiedje, T and Volz, K (2013) Bismuth-containing III-V semiconductors: Epitaxial growth and physical properties pp. 139-158.

Ludewig, P, Knaub, N, Hossain, N, Reinhard, S, Nattermann, L, Marko, IP, Jin, SR, Hild, K, Chatterjee, S, Stolz, W, Sweeney, SJ and Volz, K (2013) Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser APPLIED PHYSICS LETTERS, 102 (24), ARTN 2.

Aldukhayel, A, Jin, SR, Marko, IP, Sweeney, SJ, Zhang, SY, Revin, DG and Cockburn, JW (2013) Investigations of carrier scattering into L-valley in λ=3.5μm InGaAs/AlAs(Sb) quantum cascade lasers using high hydrostatic pressure Physica Status Solidi (B) Basic Research, 250 (4). pp. 693-697.

Sweeney, SJ and Jin, SR (2013) Bismide-nitride alloys: Promising for efficient light emitting devices in the near- and mid-infrared JOURNAL OF APPLIED PHYSICS, 113 (4), ARTN 0.

Hossain, N, Hild, K, Jin, SR, Yu, S-Q, Johnson, SR, Ding, D, Zhang, Y-H and Sweeney, SJ (2013) The influence of growth conditions on carrier recombination mechanisms in 1.3 mu m GaAsSb/GaAs quantum well lasers APPLIED PHYSICS LETTERS, 102 (4), ARTN 0.

Sweeney, SJ, Hild, K and Jin, S (2013) The potential of GaAsBiN for multi-junction solar cells 2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC). pp. 2474-2478.

Marko, IP, Batool, Z, Hild, K, Jin, SR, Hossain, N, Hosea, TJC, Sweeney, SJ, Hosea, TJC, Petropoulos, JP, Zhong, Y, Dongmo, PB and Zide, JMO (2012) Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications Applied Physics Letters, 101 (22).

Hossain, N, Jin, SR, Liebich, S, Zimprich, M, Volz, K, Kunert, B, Stolz, W and Sweeney, SJ (2012) Efficiency-limiting processes in Ga(NAsP)/GaP quantum well lasers APPLIED PHYSICS LETTERS, 101 (1), ARTN 0.

Hossain, N, Marko, IP, Jin, SR, Hild, K, Sweeney, SJ, Lewis, RB, Beaton, DA and Tiedje, T (2012) Recombination mechanisms and band alignment of GaAs1-xBix/GaAs light emitting diodes APPLIED PHYSICS LETTERS, 100 (5), ARTN 0.

Kunert, B, Liebich, S, Zimprich, M, Beyer, A, Ziegler, S, Volz, K, Stolz, W, Hossain, N, Jin, SR and Sweeney, SJ (2011) Electrical pumped integrated III/V laser lattice-matched to a Silicon substrate Device Research Conference - Conference Digest, DRC. pp. 257-258.

Hossain, N, Jin, SR, Sweeney, SJ, Liebich, S, Ludewig, P, Zimprich, M, Kunert, B, Volz, K and Stolz, W (2010) On the temperature dependence of monolithically integrated Ga(NAsP)/(BGa)P/Si QW lasers Optics InfoBase Conference Papers.

Jin, S. R., Ahmad, C. N., Sweeney, S. J., Adams, A. R., Murdin, B. N., Page, H., Marcadet, X., Sirtori, C. and Tomić, S. (2006) Spectroscopy of GaAs/AlGaAs quantum-cascade lasers using hydrostatic pressure Applied Physics Letters, 221105 (2006).

Jin, SR, Ahmad, CN, Sweeney, SJ, Adams, AR, Murdin, BN, Page, H, Marcadet, X, Sirtori, C and Tomic, S (2006) Spectroscopy of GaAs/AlGaAs quantum-cascade lasers using hydrostatic pressure APPLIED PHYSICS LETTERS, 89 (22), ARTN 2.

Hild, K, Sweeney, SJ, Wright, S, Lock, DA, Jin, SR, Marko, IP, Johnson, SR, Chaparro, SA, Yu, S-Q and Zhang, Y-H (2006) Carrier recombination in 1.3 mu m GaAsSb/GaAs quantum well lasers APPLIED PHYSICS LETTERS, 89 (17), ARTN 1.

Jin, S R, Ahmad, C N, Sweeney, S J, Adams, A R, Murdin, B N, Page, H, Marcadet, X, Sirtori, C and Tomic, S (2006) Spectroscopy of GaAs/AlGaAs Quantum-Cascade Lasers Using Hydrostatic Pressure Applied Physics Letters, 89 (22).

Jin, S. R., Sweeney, S. J., Ahmad, C. N., Adams, A. R. and Murdin, B. N. (2004) Radiative and Auger recombination in 1.3 µm InGaAsP and 1.5 µm InGaAs quantum-well lasers measured under high pressure at low and room temperatures Applied Physics Letters, 357 (2004).

Jin, SR, Sweeney, SJ, Ahmad, CN, Adams, AR and Murdin, BN (2004) Radiative and Auger recombination in 1.3 mu m InGaAsP and 1.5 mu m InGaAs quantum-well lasers measured under high pressure at low and room temperatures APPLIED PHYSICS LETTERS, 85 (3). pp. 357-359.

Jin, S R, Sweeney, S J, Ahmad, C N, Adams, A R and Murdin, B N (2004) Radiative and Auger Recombination in 1.3 mu m InGaAsP and 1.5 mu m InGaAs Quantum-well Lasers Measured Under High Pressure at Low and Room Temperatures Applied Physics Letters, 85 (3).

Jin, SR, Sweeney, Stephen, Tomic, S, Adams, Alfred and Riechert, H (2003) High-pressure studies of recombination mechanisms in 1.3-mu m GaInNAs quantum-well lasers IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 9 (5). pp. 1196-1201.

Jin, SR, Sweeney, SJ, Tomic, S, Adams, AR and Riechert, H (2003) Unusual increase of the Auger recombination current in 1.3 mu m GaInNAs quantum-well lasers under high pressure APPLIED PHYSICS LETTERS, 82 (14). pp. 2335-2337.

Jin, SR, Fehse, R, Sweeney, SJ, Knowles, G, Adams, AR, O'Reilly, EP, Reichert, H, Illek, S, Egorov, AY, Thijs, PJA, Uchida, T and Fujii, T (2002) Modal refractive index of 1.3 mu m InGaAsP, AlGaInAs and GaInNAs semiconductor lasers under high hydrostatic pressure ELECTRONICS LETTERS, 38 (7). pp. 325-327.

Jin, SR, Sweeney, SJ, Knowles, G, Adams, AR, Higashi, T, Riechert, H and Thijs, PJA (2002) Optical investigation of recombination processes in GaInNAs, InGaAsP and AlGaInAs quantum-well lasers using hydrostatic pressure Conference Digest - IEEE International Semiconductor Laser Conference. pp. 83-84.

Sweeney, SJ, Jin, SR, Fehse, R, Adams, AR, Higashi, T, Riechert, H and Thijs, PJA (2002) A comparison of the thermal stability of InGaAsP, AlGaInAs and GaInNAs quantum-well lasers for 1.3 μm operation Conference Digest - IEEE International Semiconductor Laser Conference. pp. 43-44.

Fehse, R, Jin, S, Sweeney, SJ, Adams, AR, O'Reilly, EP, Riechert, H, Illek, S and Egorov, AY (2001) Evidence for large monomolecular recombination contribution to threshold current in 1.3 mu m GaInNAs semiconductor lasers ELECTRONICS LETTERS, 37 (25). pp. 1518-1520.

Conference or Workshop Item

Sweeney, SJ, Marko, IP, Jin, SR, Hild, K, Batool, Z, Ludewig, P, Natterman, L, Bushell, Z, Stolz, W, Volz, K, Broderick, CA, Usman, M, Harnedy, PE, O'Reilly, EP, Butkute, R, Pacebutas, V, Geizutis, A and Krotkus, A (2014) Electrically injected GaAsBi Quantum Well Lasers In: 24th IEEE International Semiconductor Laser Conference (ISLC), 2014-09-07 - 2014-09-10, Palma de Mallorca, SPAIN.

Hild, K, Batool, Z, Jin, SR, Hossain, N, Marko, IP, Hosea, TJC, Lu, X, Tiedje, T and Sweeney, SJ (2013) Auger Recombination Suppression And Band Alignment In GaAsBi/GaAs Heterostructures In: 31st International Conference on the Physics of Semiconductors (ICPS), 2012-07-29 - 2012-08-03, Zurich, SWITZERLAND.

Hosea, TJC, Chai, GMT, Marko, IP, Batool, Z, Hild, K, Jin, SR, Hossain, N, Sweeney, SJ, Petropoulos, JP, Zhong, Y, Dongmo, PB and Zide, JMO (2012) InGaBiAs/InP semiconductors for mid-infrared applications: Dependence of bandgap and spin-orbit splitting on temperature and bismuth content

Hossain, N, Jin, SR, Sweeney, SJ, Liebich, S, Ludewig, P, Zimprich, M, Volz, K, Kunert, B and Stolz, W (2011) Physical properties of monolithically integrated Ga(NAsP)/(BGa)P QW lasers on silicon In: Group IV Photonics, 2011-09-14 - 2011-09-16, London, UK.

Sweeney, SJ, Batool, Z, Hild, K, Jin, SR and Hosea, TJC (2011) The Potential Role of Bismide Alloys in Future Photonic Devices In: 13th ICTON, 2011-06-26 - 2011-06-30, Stockholm, Sweden.

Hossain, N, Jin, SR, Sweeney, SJ, Yu, S-Q, Johnson, SR, Ding, D and Zhang, Y-H (2010) Improved performance of GaAsSb/GaAs SQW lasers In: Novel In-Plane Semiconductor Lasers IX, 2010-01-25 - 2010-01-28, San Francisco, USA.

Hossain, N, Hild, K, Jin, SR, Sweeney, SJ, Yu, S-Q, Johnson, SR, Ding, D and Zhang, Y-H (2010) Influence of device structures on carrier recombination in GaAsSb/GaAs QW lasers In: PGC 2010, 2010-12-14 - 2010-12-16, Orchard, Singapore.

Hossain, N, Jin, SR, Sweeney, SJ, Liebich, S, Ludewig, P, Zimprich, M, Kunert, B, Volz, K and Stolz, W (2010) Lasing properties of monolithically integrated Ga(NAsP)/(BGa)P QW lasers on a Silicon substrate grown by MOVPE In: 22nd IEEE ISLC, 2010-09-26 - 2010-09-30, Kyoto, Japan.

Liebich, S, Zimprich, M, Ludewig, P, Beyer, A, Volz, K, Stolz, W, Kunert, B, Hossain, N, Jin, SR and Sweeney, SJ (2010) MOVPE growth and characterization of Ga(NAsP) laser structures monolithically integrated on Si (001) substrates In: 22nd IEEE ISLC, 2010-09-26 - 2010-09-30, Kyoto, Japan.

Hossain, N, Jin, SR, Sweeney, SJ, Liebich, S, Reinhard, S, Volz, K, Kunert, B and Stolz, W (2010) Physical properties of Ga(NAsP)/GaP QW lasers grown by MOVPE In: Photonics 2010, 2010-11-07 - 2010-11-11, Denver, USA.

Hossain, N, Chamings, J, Jin, SR, Sweeney, SJ, Liebich, S, Reinhard, S, Volz, K, Kunert, B and Stolz, W (2010) Recombination and loss mechanisms in GaNAsP/GaP QW lasers In: PGC 2010, 2010-12-14 - 2010-12-16, Orchard, Singapore.

Hossain, N, Hild, K, Jin, S, Sweeney, SJ, Yu, S-Q, Johnson, SR, Ding, D and Zhang, Y-H (2010) Role of growth temperature on the physical characteristics of GaAsSb/GaAs QW lasers In: Photonics 2010, 2010-11-07 - 2010-11-11, Denver, USA.

Hild, K, Sweeney, SJ, Jin, SR, Healy, SB, O'Rellly, EP, Johnson, SR, Wang, J-B, Zhang, Y-H, Jantsch, W and Schaffler, F (2007) Band alignment and carrier recombination in GaAsSb/GaAs quantum wells In: 28th International Conference on the Physics of Semiconductors (ICPS-28), 2006-07-24 - 2006-07-28, Vienna, AUSTRIA.

O'Brien, K, Adams, AR, Sweeney, SJ, Jin, SR, Ahmad, CN, Murdin, BN, Canedy, CL, Vurgaftman, I and Meyer, JR (2007) High pressure studies of mid-infrared type-II "W" diode lasers at cryogenic temperatures In: 12th International Conference on High Pressure Semiconductor Physics (HPSP-12), 2006-07-31 - 2006-08-03, Barcelona, SPAIN.

Hild, K, Sweeney, SJ, Marko, IP, Jin, SR, Johnson, SR, Chaparro, SA, Yu, S and Zhang, Y-H (2007) Temperature and pressure dependence of carrier recombination processes in GaAsSb/GaAs quantum well lasers In: 12th International Conference on High Pressure Semiconductor Physics (HPSP-12), 2006-07-31 - 2006-08-03, Barcelona, SPAIN.

O'Brien, K, Sweeney, SJ, Adams, AR, Jin, SR, Ahmad, CN, Murdin, BN, Salhi, A, Rouillard, Y and Joullie, A (2007) Carrier recombination mechanisms in mid-infrared GaInAsSb quantum well lasers In: 12th International Conference on High Pressure Semiconductor Physics (HPSP-12), 2006-07-31 - 2006-08-03, Barcelona, SPAIN.

O'Brien, K, Adams, AR, Sweeney, SJ, Jin, SR, Ahmad, CN, Murdin, BN, Canedy, CL, Vurgaftman, I and Meyer, JR (2006) Analysis of the major loss processes in mid-infrared type-II "W" diode lasers

Sweeney, SJ, Jin, SR, Ahmad, CN, Adams, AR and Murdin, BN (2004) Carrier recombination processes in 1.3 mu m and 1.5 mu m InGaAs(P)-based lasers at cryogenic temperatures and high pressures In: 11th International Conference on High-Pressure Semiconductor Physics (HPSP-11), 2004-08-02 - 2004-08-05, Berkeley, CA.

Marko, IP, Sweeney, SJ, Adams, AR, Jin, SR, Murdin, BN, Schwertberger, R, Somers, A, Reithmaier, JP and Forchel, A (2004) Recombination mechanisms in InAs/InP quantum dash lasers studied using high hydrostatic pressure In: 11th International Conference on High-Pressure Semiconductor Physics (HPSP-11), 2004-08-02 - 2004-08-05, Berkeley, CA.

Marko, I. P., Adams, A. R., Sweeney, S. J., Jin, S. R., Murdin, B. N., Schwertberger, R., Somers, A., Reithmaier, J. P. and Forchel, A. (2004) Experimental investigations into the thermal properties of 1.5-1.8-/spl mu/m InAs/InP quantum dash lasers

Marko, I P, Adams, A R, Sweeney, S J, Jin, S R, Murdin, B N, Schwertberger, R, Somers, A, Reithmaier, J P and Forchel, A (2004) Experimental Investigations into the Thermal Properties of 1.5-1.8&#956m InAs/InP Quantum Dash Lasers In: 2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest..

Marko, IP, Adams, AR, Sweeney, SJ, Jin, SR, Murdin, BN, Schwertberger, R, Somers, A, Reithmaier, JP and Forchel, A (2004) Experimental investigations into the thermal properties of 1.5-1.8-mu m InAs/InP quantum dash lasers In: 19th IEEE International Semiconductor Laser Conference, 2004-09-21 - 2004-09-25, Matsue, JAPAN.

Sweeney, Stephen, McConville, D, Jin, SR, Ahmad, CN, Masse, NF, Bouyssou, RX, Adams, Alfred and Hanke, C (2004) Temperature and wavelength dependence of recombination processes in 1.5 mu m InGaAlAs/InP-based lasers In: 16th International Conference on Indium Phosphide and Related Materials, 2004-05-31 - 2004-06-04, Kagoshima, JAPAN.

Jin, SR, Sweeney, SJ, Adams, AR and Thijs, PJA (2003) Coupling of large optical loss with Auger recombination in 1.3 mu m InGaAsP lasers investigated using hydrostatic pressure In: 10th International Conference on High Pressures in Semiconductor Physics (HPSP-X), 2002-08-05 - 2002-08-08, UNIV SURREY, GUILDFORD, ENGLAND.

Knowles, G, Tomic, S, Jin, S, Fehse, R, Sweeney, SJ, Sale, TE and Adams, AR (2003) Gain-cavity alignment profiling of 1.3 mu m emitting GaInNAs vertical cavity surface emitting lasers (VCSELs) using high pressure techniques In: 10th International Conference on High Pressures in Semiconductor Physics (HPSP-X), 2002-08-05 - 2002-08-08, UNIV SURREY, GUILDFORD, ENGLAND.

Sweeney, SJ, Jin, SR, Tomic, S, Adams, AR, Higashi, T, Riechert, H and Thijs, PJA (2003) Hydrostatic pressure dependence of recombination mechanisms in GaInNAs, InGaAsP and AlGaInAs 1.3 mu m quantum well lasers In: 10th International Conference on High Pressures in Semiconductor Physics (HPSP-X), 2002-08-05 - 2002-08-08, UNIV SURREY, GUILDFORD, ENGLAND.

Jin, SR, Sweeney, SJ, Tomic, S, Adams, AR and Riechert, H (2003) Quantifying pressure-dependent recombination currents in GaInNAs lasers using spontaneous emission measurements In: 10th International Conference on High Pressures in Semiconductor Physics (HPSP-X), 2002-08-05 - 2002-08-08, UNIV SURREY, GUILDFORD, ENGLAND.

Jin, SR, Sweeney, SJ, Adams, AR, Higashi, T, Riechert, H and Thijs, PJA (2003) Wavelength dependence of the modal refractive index in 1.3 mu m InGaAsP, AlGaInAs and GaInNAs lasers using high pressure In: 10th International Conference on High Pressures in Semiconductor Physics (HPSP-X), 2002-08-05 - 2002-08-08, UNIV SURREY, GUILDFORD, ENGLAND.

Fehse, R, Jin, S, Sweeney, SJ, Adams, AR, O'Reilly, EP, Illek, S, Egorov, AY and Riechert, H (2001) The temperature dependence of the recombination processes in 1.3 mu m GaInNAs-based edge emitting lasers In: 14th Annual Meeting of the IEEE Lasers-and-Electro-Optics-Society, 2001-11-11 - 2001-11-15, SAN DIEGO, CA.

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