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Items where Author is "Jantsch, W"

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Number of items: 6.

Article

Kozanecki, A, Stepikhova, M, Lanzerstorfer, S, Jantsch, W, Palmetshofer, L, Sealy, BJ and Jeynes, C (1998) Excitation of Er3+ ions in silicon dioxide films thermally grown on silicon APPLIED PHYSICS LETTERS, 73 (20). pp. 2929-2931.

Conference or Workshop Item

Hild, K, Sweeney, SJ, Jin, SR, Healy, SB, O'Rellly, EP, Johnson, SR, Wang, J-B, Zhang, Y-H, Jantsch, W and Schaffler, F (2007) Band alignment and carrier recombination in GaAsSb/GaAs quantum wells In: 28th International Conference on the Physics of Semiconductors (ICPS-28), 2006-07-24 - 2006-07-28, Vienna, AUSTRIA.

Marko, IP, Masse, NF, Sweeney, SJ, Adams, AR, Hatori, N, Sugawara, M, Jantsch, W and Schaffler, F (2007) Recombination, transport and loss mechanisms in p-doped InAs/GaAs quantum dots In: 28th International Conference on the Physics of Semiconductors (ICPS-28), 2006-07-24 - 2006-07-28, Vienna, AUSTRIA.

Kozanecki, A, Jeynes, C, Barradas, NP, Sealy, BJ and Jantsch, W (1999) The influence of implantation and annealing conditions on optical activity of Er3+ ions in 6H SiC In: 11th International Conference on Ion Beam Modification of Materials (IBMM98), 1998-08-31 - 1998-09-04, ROYAL TROP INST, AMSTERDAM, NETHERLANDS.

Kozanecki, A, Jeynes, C, Sealy, BJ, Jantsch, W, Lanzerstorfer, S, Heiss, W and Prechtl, G (1998) Photoluminescence and backscattering characterization of 6H SiC implanted with erbium and oxygen ions In: 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), 1997-08-31 - 1997-09-05, STOCKHOLM, SWEDEN.

Kozanecki, N, Jantsch, W, Heis, W, Prechtl, G, Sealy, BJ and Jeynes, C (1997) Infrared luminescence in Er and Er+O implanted 6H SiC In: XXVI International School on Physics of Semiconducting Compounds, 1997-06-06 - 1997-06-13, JASZOWIEC, POLAND.

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