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Items where Author is "Hossain, N"

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Number of items: 23.

Article

Marko, Igor, Read, GW, Hossain, N and Sweeney, Stephen (2015) Physical Properties and Characteristics of III-V Lasers on Silicon IEEE Journal of Selected Topics in Quantum Electronics, 21 (6), 1502208.

Ludewig, P, Knaub, N, Hossain, N, Reinhard, S, Nattermann, L, Marko, IP, Jin, SR, Hild, K, Chatterjee, S, Stolz, W, Sweeney, SJ and Volz, K (2013) Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser APPLIED PHYSICS LETTERS, 102 (24), ARTN 2.

Hossain, N, Hild, K, Jin, SR, Yu, S-Q, Johnson, SR, Ding, D, Zhang, Y-H and Sweeney, SJ (2013) The influence of growth conditions on carrier recombination mechanisms in 1.3 mu m GaAsSb/GaAs quantum well lasers APPLIED PHYSICS LETTERS, 102 (4), ARTN 0.

Srinivasan, S, Tang, Y, Read, G, Hossain, N, Hang, D, Sweeney, SJ and Bowers, JE (2013) HYBRID SILICON DEVICES FOR ENERGY-EFFICIENT OPTICAL TRANSMITTERS IEEE MICRO, 33 (1). pp. 22-31.

Marko, IP, Batool, Z, Hild, K, Jin, SR, Hossain, N, Hosea, TJC, Sweeney, SJ, Hosea, TJC, Petropoulos, JP, Zhong, Y, Dongmo, PB and Zide, JMO (2012) Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications Applied Physics Letters, 101 (22).

Hossain, N, Jin, SR, Liebich, S, Zimprich, M, Volz, K, Kunert, B, Stolz, W and Sweeney, SJ (2012) Efficiency-limiting processes in Ga(NAsP)/GaP quantum well lasers APPLIED PHYSICS LETTERS, 101 (1), ARTN 0.

Hossain, N, Marko, IP, Jin, SR, Hild, K, Sweeney, SJ, Lewis, RB, Beaton, DA and Tiedje, T (2012) Recombination mechanisms and band alignment of GaAs1-xBix/GaAs light emitting diodes APPLIED PHYSICS LETTERS, 100 (5), ARTN 0.

Hossain, N, Hosea, TJC, Sweeney, SJ, Liebich, S, Zimprich, M, Volz, K, Kunert, B and Stolz, W (2011) Band structure properties of novel BxGa1-xP alloys for silicon integration JOURNAL OF APPLIED PHYSICS, 110 (6), ARTN 0.

Liebich, S, Zimprich, M, Beyer, A, Lange, C, Franzbach, DJ, Chatterjee, S, Hossain, N, Sweeney, SJ, Volz, K, Kunert, B and Stolz, W (2011) Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate APPLIED PHYSICS LETTERS, 99 (7), ARTN 0.

Hossain, N, Sweeney, SJ, Rogowsky, S, Ostendorf, R, Wagner, J, Liebich, S, Zimprich, M, Volz, K, Kunert, B and Stolz, W (2011) Reduced threshold current dilute nitride Ga(NAsP)/GaP quantum well lasers grown by MOVPE ELECTRONICS LETTERS, 47 (16). pp. 931-933.

Kunert, B, Liebich, S, Zimprich, M, Beyer, A, Ziegler, S, Volz, K, Stolz, W, Hossain, N, Jin, SR and Sweeney, SJ (2011) Electrical pumped integrated III/V laser lattice-matched to a Silicon substrate Device Research Conference - Conference Digest, DRC. pp. 257-258.

Hossain, N, Jin, SR, Sweeney, SJ, Liebich, S, Ludewig, P, Zimprich, M, Kunert, B, Volz, K and Stolz, W (2010) On the temperature dependence of monolithically integrated Ga(NAsP)/(BGa)P/Si QW lasers Optics InfoBase Conference Papers.

Conference or Workshop Item

Hild, K, Batool, Z, Jin, SR, Hossain, N, Marko, IP, Hosea, TJC, Lu, X, Tiedje, T and Sweeney, SJ (2013) Auger Recombination Suppression And Band Alignment In GaAsBi/GaAs Heterostructures In: 31st International Conference on the Physics of Semiconductors (ICPS), 2012-07-29 - 2012-08-03, Zurich, SWITZERLAND.

Hossain, N, Hosea, J, Liebich, S, Zimprich, M, Volz, K, Kunert, B, Stolz, W and Sweeney, S (2013) Band Structure Properties of (BGa)P Semiconductors for Lattice Matched Integration on (001) Silicon In: 31st International Conference on the Physics of Semiconductors (ICPS), 2012-07-29 - 2012-08-03, Zurich, SWITZERLAND.

Hosea, TJC, Chai, GMT, Marko, IP, Batool, Z, Hild, K, Jin, SR, Hossain, N, Sweeney, SJ, Petropoulos, JP, Zhong, Y, Dongmo, PB and Zide, JMO (2012) InGaBiAs/InP semiconductors for mid-infrared applications: Dependence of bandgap and spin-orbit splitting on temperature and bismuth content

Hossain, N, Jin, SR, Sweeney, SJ, Liebich, S, Ludewig, P, Zimprich, M, Volz, K, Kunert, B and Stolz, W (2011) Physical properties of monolithically integrated Ga(NAsP)/(BGa)P QW lasers on silicon In: Group IV Photonics, 2011-09-14 - 2011-09-16, London, UK.

Hossain, N, Jin, SR, Sweeney, SJ, Yu, S-Q, Johnson, SR, Ding, D and Zhang, Y-H (2010) Improved performance of GaAsSb/GaAs SQW lasers In: Novel In-Plane Semiconductor Lasers IX, 2010-01-25 - 2010-01-28, San Francisco, USA.

Hossain, N, Hild, K, Jin, SR, Sweeney, SJ, Yu, S-Q, Johnson, SR, Ding, D and Zhang, Y-H (2010) Influence of device structures on carrier recombination in GaAsSb/GaAs QW lasers In: PGC 2010, 2010-12-14 - 2010-12-16, Orchard, Singapore.

Hossain, N, Jin, SR, Sweeney, SJ, Liebich, S, Ludewig, P, Zimprich, M, Kunert, B, Volz, K and Stolz, W (2010) Lasing properties of monolithically integrated Ga(NAsP)/(BGa)P QW lasers on a Silicon substrate grown by MOVPE In: 22nd IEEE ISLC, 2010-09-26 - 2010-09-30, Kyoto, Japan.

Liebich, S, Zimprich, M, Ludewig, P, Beyer, A, Volz, K, Stolz, W, Kunert, B, Hossain, N, Jin, SR and Sweeney, SJ (2010) MOVPE growth and characterization of Ga(NAsP) laser structures monolithically integrated on Si (001) substrates In: 22nd IEEE ISLC, 2010-09-26 - 2010-09-30, Kyoto, Japan.

Hossain, N, Jin, SR, Sweeney, SJ, Liebich, S, Reinhard, S, Volz, K, Kunert, B and Stolz, W (2010) Physical properties of Ga(NAsP)/GaP QW lasers grown by MOVPE In: Photonics 2010, 2010-11-07 - 2010-11-11, Denver, USA.

Hossain, N, Chamings, J, Jin, SR, Sweeney, SJ, Liebich, S, Reinhard, S, Volz, K, Kunert, B and Stolz, W (2010) Recombination and loss mechanisms in GaNAsP/GaP QW lasers In: PGC 2010, 2010-12-14 - 2010-12-16, Orchard, Singapore.

Hossain, N, Hild, K, Jin, S, Sweeney, SJ, Yu, S-Q, Johnson, SR, Ding, D and Zhang, Y-H (2010) Role of growth temperature on the physical characteristics of GaAsSb/GaAs QW lasers In: Photonics 2010, 2010-11-07 - 2010-11-11, Denver, USA.

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