Items where Author is "Homewood, KP"
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Article
Milosavljevic, M, Lourenco, MA, Gwilliam, RM and Homewood, KP (2011) Role of heavy ion co-implantation and thermal spikes on the development of dislocation loops in nanoengineered silicon light emitting diodes JOURNAL OF APPLIED PHYSICS, 110 (3). ? - ?. ISSN 0021-8979
Lourenço, MA and Homewood, KP (2011) Crystalline-silicon-based infra-red LEDs and routes to laser diodes Thin Solid Films, 519 (24). 8441 - 8445. ISSN 0040-6090
Lourenco, MA, Gwilliam, RM and Homewood, KP (2008) Silicon light emitting diodes emitting over the 1.2-1.4 mu m wavelength region in the extended optical communication band APPLIED PHYSICS LETTERS, 92 (16). ? - ?. ISSN 0003-6951
Lourenco, MA, Gwilliam, RM and Homewood, KP (2007) Extraordinary optical gain from silicon implanted with erbium APPLIED PHYSICS LETTERS, 91 (14). ? - ?. ISSN 0003-6951
Milosavljevic, M, Shao, G, Lourenco, MA, Gwilliam, RM, Homewood, KP, Edwards, SP, Valizadeh, R and Colligon, JS (2005) Transition from amorphous to crystalline beta phase in co-sputtered FeSi2 films as a function of temperature JOURNAL OF APPLIED PHYSICS, 98 (12). ? - ?. ISSN 0021-8979
Lourenco, MA, Milosavljevic, M, Gwilliam, RM, Homewood, KP and Shao, G (2005) On the role of dislocation loops in silicon light emitting diodes APPLIED PHYSICS LETTERS, 87 (20). ? - ?. ISSN 0003-6951
Milosavljevic, M, Shao, G, Lourenco, MA, Gwilliam, RM and Homewood, KP (2005) Engineering of boron-induced dislocation loops for efficient room-temperature silicon light-emitting diodes JOURNAL OF APPLIED PHYSICS, 97 (7). ? - ?. ISSN 0021-8979
Niby, MA, Li, DQ, Lourenco, MA, Nejim, A, Homewood, KP, Hemment, PLF, Ishidida, E, Current, M, Banerjee, S, Larson, L, Mehta, S, Tasch, A, Smith, TC and Romig, T (1997) The lifetime distribution of excess carriers in H+ ion implanted silicon by photoconductive frequency resolved spectroscopy ION IMPLANTATION TECHNOLOGY - 96 . 668 - 671.
Conference or Workshop Item
Homewood, KP, Lourenco, MA, Milosavljevic, M, Shao, G and Gwilliam, RM (2005) Dislocation engineered silicon for light emission
