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Article

Litvinenko, Konstantin, Li, Juerong, Stavrias, N, Meaney, A, Christianen, P, Engelkamp, H, Homewood, Kevin, Pidgeon, C and Murdin, Benedict (2016) The Quadratic Zeeman effect used for state-radius determination in neutral donors and donor bound excitons in Si:P Semiconductor Science and Technology, 31, 045007. 045007-045007.

Lourenco, MD, Hughes, MA, Lai, KT, Sofi, IM, Ludurczak, W, Wong, L, Gwilliam, RM and Homewood, KP (2016) Silicon-Modified Rare-Earth Transitions - a New Route to Near- and Mid-IR Photonics Advanced Functional Materials, 26. pp. 1986-1994.

Obradovic, M, Pjevic, D, Perusko, D, Grce, A, Milosavljevic, M, Homewood, KP and Siketic, Z (2015) Effects of helium ion irradiation on bubble formation in AlN/TiN multilayered system THIN SOLID FILMS, 591. pp. 164-168.

Lourenco, MA, Ludurczak, W, Prins, AD, Milosavljevic, M, Gwilliam, RM and Homewood, KP (2015) Light emission from rare-earths in dislocation engineered silicon substrates JAPANESE JOURNAL OF APPLIED PHYSICS, 54 (7), ARTN 07JB0.

Homewood, KP and Lourenco, MA (2015) OPTOELECTRONICS The rise of the GeSn laser NATURE PHOTONICS, 9 (2). pp. 78-79.

Hughes, MA, Lourenco, MA, Carey, JD, Ben, M and Homewood, KP (2014) Crystal field analysis of Dy and Tm implanted silicon for photonic and quantum technologies OPTICS EXPRESS, 22 (24). pp. 29292-29303.

Fedorenko, YG, Hughes, MA, Colaux, JL, Jeynes, C, Gwilliam, RM, Homewood, K, Gholipour, B, Yao, J, Hewak, DW, Lee, T-H, Elliott, SR and Curry, RJ (2014) Electrical properties of Bi-implanted amorphous chalcogenide films

Hughes, MA, Fedorenko, Y, Gwilliam, RM, Homewood, KP, Curry, RJ, Hinder, S, Gholipour, B, Hewak, DW, Lee, T-H and Elliott, SR (2014) Ion-implantation-enhanced chalcogenide-glass resistive-switching devices Applied Physics Letters, 105 (8).

Hughes, MA, Federenko, Y, Lee, TH, Yao, J, Gholipour, B, Gwilliam, RM, Homewood, KP, Hewak, DW, Elliott, SR, Curry, RJ, Digonnet, MJF and Jiang, S (2014) Optical and electronic properties of bismuth-implanted glasses OPTICAL COMPONENTS AND MATERIALS XI, 8982, ARTN 8.

Hughes, MA, Homewood, KP, Curry, RJ, Ohno, Y, Mizutani, T, Digonnet, MJF and Jiang, S (2014) Split gate and asymmetric contact carbon nanotube optical devices OPTICAL COMPONENTS AND MATERIALS XI, 8982, ARTN 8.

Hughes, MA, Fedorenko, Y, Gholipour, B, Yao, J, Lee, TH, Gwilliam, RM, Homewood, KP, Hinder, S, Hewak, DW, Elliott, SR and Curry, RJ (2014) n-type chalcogenides by ion implantation. Nat Commun, 5.

Hughes, MA, Homewood, KP, Curry, RJ, Ohno, Y and Mizutani, T (2013) An ultra-low leakage current single carbon nanotube diode with split-gate and asymmetric contact geometry Applied Physics Letters, 103 (13).

Loureno, MA, Mustafa, Z, Ludurczak, W, Wong, L, Gwilliam, RM and Homewood, KP (2013) High temperature luminescence of Dy3+ in crystalline silicon in the optical communication and eye-safe spectral regions OPTICS LETTERS, 38 (18). pp. 3669-3672.

Hughes, MA, Gwilliam, RM, Homewood, K, Curry, RJ, Gholipour, B, Hewak, DW, Lee, T-H, Elliott, SR, Suzuki, T, Ohishi, Y and Kohoutek, T (2013) On the analogy between photoluminescence and carrier-type reversal in Bi-and Pb-doped glasses Optics Express, 21 (7). pp. 8101-8115.

Milosavljevic, M, Toprek, D, Obradovic, M, Grce, A, Perusko, D, Drazic, G, Kovac, J and Homewood, KP (2013) Ion irradiation induced solid-state amorphous reaction in Ni/Ti multilayers APPLIED SURFACE SCIENCE, 268. pp. 516-523.

Berhanuddin, DD, Lourenco, MA, Jeynes, C, Milosavljevic, M, Gwilliam, RM and Homewood, KP (2012) Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre JOURNAL OF APPLIED PHYSICS, 112 (10), ARTN 1.

Berhanuddin, DD, Lourenco, MA, Gwilliam, RM and Homewood, KP (2012) Co-Implantation of Carbon and Protons: An Integrated Silicon Device Technology Compatible Method to Generate the Lasing G-Center ADVANCED FUNCTIONAL MATERIALS, 22 (13). pp. 2709-2712.

Petrovic, S, Perusko, D, Mitric, M, Kovac, J, Drazic, G, Gakovic, B, Homewood, KP and Milosavljevic, M (2012) Formation of intermetallic phase in Ni/Ti multilayer structure by ion implantation and thermal annealing INTERMETALLICS, 25. pp. 27-33.

Antwis, L, Gwilliam, R, Smith, A, Jeynes, C and Homewood, K (2012) Characterization of a-FeSi /c-Si heterojunctions for photovoltaic applications Semiconductor Science and Technology, 27 (3).

Milosavljevic, M, Lourenco, MA, Gwilliam, RM and Homewood, KP (2011) Role of heavy ion co-implantation and thermal spikes on the development of dislocation loops in nanoengineered silicon light emitting diodes JOURNAL OF APPLIED PHYSICS, 110 (3), ARTN 0.

Lourenço, M, Gwilliam, R and Homewood, K (2011) Eye-safe 2 μm luminescence from thulium-doped silicon. Opt Lett, 36 (2). pp. 169-171.

Lourenço, MA and Homewood, KP (2011) Crystalline-silicon-based infra-red LEDs and routes to laser diodes Thin Solid Films, 519 (24). pp. 8441-8445.

Fedotova, JA, Przewoznik, J, Kapusta, C, Milosavljevi, M, Kasiuk, JV, Zukrowski, J, Sikora, M, Maximenko, AA, Szepietowska, D and Homewood, KP (2011) Magnetoresistance in FeCoZrAl2O3 nanocomposite films containing metal coreoxide shell nanogranules Journal of Physics D: Applied Physics, 44 (49), 495001.

Maeda, Y, Terai, Y, Homewood, Kevin, Takarabe, K, Yamaguchi, K, Suzuki, M, Sadoh, T and Nakamura, Y (2011) Preface Thin Solid Films, 519 (24). p. 8433.

Milosavljević, M, Milinović, V, Peruško, D, Grce, A, Stojanović, M, Pjević, D, Mitrić, M, Kovač, J and Homewood, KP (2011) Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms.

Milosavljevic, M, Wong, L, Lourenco, M, Valizadeh, R, Colligon, J, Shao, G and Homewood, K (2010) Correlation of Structural and Optical Properties of Sputtered FeSi2 Thin Films JAPANESE JOURNAL OF APPLIED PHYSICS, 49 (8), ARTN 08140.

Homewood, KP, Lourenço, MA and Gwilliam, RM (2010) Nano-engineered silicon light emitting diodes and optically active waveguides Optical Materials.

Lourenço, MA, Opoku, C, Gwilliam, RM and Homewood, KP (2010) Photoluminescence study of thulium-doped silicon substrates for light emitting diodes Optical Materials.

Sun, CM, Tsang, HK, Wong, SP, Cheung, WY, Ke, N, Lourenco, MA and Homewood, KP (2009) Electroluminescence from metal-oxide-silicon tunneling diode with ion-beam-synthesized beta-FeSi2 precipitates embedded in the active region NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 267 (7). pp. 1081-1084.

Lourenco, MA and Homewood, KP (2008) Dislocation-engineered silicon light emitters for photonic integration SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 23 (6), ARTN 06400.

Lourenco, MA, Gwilliam, RM and Homewood, KP (2008) Silicon light emitting diodes emitting over the 1.2-1.4 mu m wavelength region in the extended optical communication band APPLIED PHYSICS LETTERS, 92 (16), ARTN 1.

Wong, L, Milosavljevic, M, Lourenco, MA, Shao, G, Valizadeh, R, Colligon, JS and Homewood, KP (2008) Annealing and deposition temperature dependence of the bandgap of amorphous FeSi(2) fabricated by co-sputter deposition SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 23 (3), ARTN 03500.

Milgram, JN, Knights, AP, Homewood, KP and Gwilliam, RM (2007) Considerations for interpretation of luminescence from silicon-on-insulator light emitting structures SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 22 (10). pp. 1104-1110.

Lourenco, MA, Gwilliam, RM and Homewood, KP (2007) Extraordinary optical gain from silicon implanted with erbium APPLIED PHYSICS LETTERS, 91 (14), ARTN 1.

Gao, Y, Shao, GS, Li, Q, Xu, YM, Wong, SP, Zhou, MY, Lourenco, MA and Homewood, KP (2007) Microstructural and optical properties of semiconducting MnSi1.7 synthesized by ion implantation JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46 (9A). pp. 5777-5779.

Maeda, Y, Homewood, KP, Sadoh, T, Terai, Y, Yamaguchi, K and Akiyama, K (2007) Asia-Pacific conference on semiconducting silicides science and technology towards sustainable optoelectronics (APAC-SILICIDE 2006) July 29-31, 2006, Kyoto - Preface THIN SOLID FILMS, 515 (22). p. 8101.

Gao, Y, Chong, YT, Chow, CF, Wong, SP, Homewood, KP and Li, Q (2007) Post-annealing effect on the microstructure and photoluminescence properties of the ion beam synthesized FeSi2 precipitates in Si NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 259 (2). pp. 871-874.

Milosavljevic, M, Lourenco, MA, Shao, G, Gwilliam, RM and Homewood, KP (2006) Optimising dislocation-engineered silicon light-emitting diodes APPLIED PHYSICS B-LASERS AND OPTICS, 83 (2). pp. 289-294.

Milosavljevic, M, Shao, G, Lourenco, MA, Gwilliam, RM, Homewood, KP, Edwards, SP, Valizadeh, R and Colligon, JS (2005) Transition from amorphous to crystalline beta phase in co-sputtered FeSi2 films as a function of temperature JOURNAL OF APPLIED PHYSICS, 98 (12), ARTN 1.

Lourenco, MA, Milosavljevic, M, Gwilliam, RM, Homewood, KP and Shao, G (2005) On the role of dislocation loops in silicon light emitting diodes APPLIED PHYSICS LETTERS, 87 (20), ARTN 2.

Milosavljevic, M, Shao, G, Lourenco, MA, Gwilliam, RM and Homewood, KP (2005) Engineering of boron-induced dislocation loops for efficient room-temperature silicon light-emitting diodes JOURNAL OF APPLIED PHYSICS, 97 (7), ARTN 0.

Chow, CF, Gao, Y, Wong, SP, Ke, N, Li, Q, Cheung, WY, Shao, G, Lourenco, MA and Homewood, KP (2005) Photoluminescence and electroluminescence properties of FeSi2-Si structures formed by MEVVA implantation Amorphous and Nanocrystalline Silicon Science and Technology-2005, 862. pp. 507-512.

Chow, CF, Gao, Y, Wong, SP, Ke, N, Li, Q, Cheung, WY, Shao, G, Lourenco, MA and Homewood, KP (2005) Structures and light emission properties of ion beam synthesized FeSi2 in silicon Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems II, 5650. pp. 17-22.

Lourenco, MA, Siddiqui, MSA, Shao, G, Gwilliam, RM and Homewood, KP (2004) Ion beam fabricated silicon light emitting diodes PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 201 (2). pp. 239-244.

Homewood, KP, Lourenco, MA, Ng, WL, Gwilliam, RM, Shao, G and Ledain, S (2002) Novel light emitting diodes in silicon Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest.

Butler, T.M., McKinty, C.N., Homewood, K P, Gwilliam, R.M., Kirkby, K.J., Shao, G and Edwards, S (2002) Effect of Implant Conditions on the Optical and Structural Properties of β-FeSi2 Proceedings of the 14th International Conference on Ion Implantation Technology. pp. 579-582.

Ng, WL, Lourenço, MA, Gwilliam, RM, Ledain, S, Shao, G and Homewood, KP (2001) Erratum: An efficient room-temperature silicon-based light-emitting diode (Nature (2001) 410 (192-194)) Nature, 414 (6862).

Ng, WL, Lourenco, MA, Gwilliam, RM, Ledain, S, Shao, G and Homewood, KP (2001) An efficient room-temperature silicon-based light-emitting diode (vol 410, pg 192, 2001) NATURE, 414 (6862). p. 470.

Milosavljevic, M, Shao, G, Bibic, N, McKinty, CN, Jeynes, C and Homewood, KP (2001) Amorphous-iron disilicide: A promising semiconductor APPLIED PHYSICS LETTERS, 79 (10). pp. 1438-1440.

Lourenco, MA, Butler, TM, Kewell, AK, Gwilliam, RM, Kirkby, KJ and Homewood, KP (2001) Electroluminescence of beta-FeSi2 light emitting devices JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 40 (6A). pp. 4041-4044.

Ng, WL, Lourenco, MA, Gwilliam, RM, Ledain, S, Shao, G and Homewood, KP (2001) An efficient room-temperature silicon-based light-emitting diode NATURE, 410 (6825). pp. 192-194.

Knights, AP, Lourenco, MA, Homewood, KP, Morrison, DJ, Wright, NG, Ortolland, S, Johnson, CM, O'Neill, AG, Coleman, PG, Hilton, KP and Uren, MJ (2000) Low temperature annealing of 4H-SiC Schottky diode edge terminations formed by 30 keV Ar+ implantation JOURNAL OF APPLIED PHYSICS, 87 (8). pp. 3973-3977.

Sharpe, JS, Chen, YL, Gwilliam, RM, Kewell, AK, McKinty, CN, Lourenco, MA, Shao, G, Homewood, KP and Kirkby, KR (1999) Ion beam synthesized Ru2Si3 APPLIED PHYSICS LETTERS, 75 (9). pp. 1282-1283.

Lourenco, MA, Ng, WL, Homewood, KP and Durose, K (1999) A deep semiconductor defect with continuously variable activation energy and capture cross section APPLIED PHYSICS LETTERS, 75 (2). pp. 277-279.

Barradas, NP, Jeynes, C, Homewood, KP, Sealy, BJ and Milosavljevic, M (1998) RBS/simulated annealing analysis of silicide formation in Fe/Si systems NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 139 (1-4). pp. 235-238.

Lourenco, MA, Yew, YK, Homewood, KP, Durose, K, Richter, H and Bonnet, D (1997) Deep level transient spectroscopy of CdS/CdTe thin film solar cells JOURNAL OF APPLIED PHYSICS, 82 (3). pp. 1423-1426.

Niby, MA, Li, DQ, Lourenco, MA, Nejim, A, Homewood, KP, Hemment, PLF, Ishidida, E, Current, M, Banerjee, S, Larson, L, Mehta, S, Tasch, A, Smith, TC and Romig, T (1997) The lifetime distribution of excess carriers in H+ ion implanted silicon by photoconductive frequency resolved spectroscopy ION IMPLANTATION TECHNOLOGY - 96. pp. 668-671.

Pérez-Rodríguez, A., Martín, E., Samitier, J., Jiménez, J., Morante, J. R., Hemment, P. L. F. and Homewood, K. P. (1991) In depth resolved analysis of SIMOX materials by optical characterization techniques Proceedings of the IEEE International SOI Conference, 1991. pp. 110-111.

Perez, A., Samitier, J., Cornet, A., Morante, J. R., Hemment, P. L. F. and Homewood, K. P. (1990) Infrared reflection spectroscopy analysis of SIMOX material obtained by multiple implant IEEE 1990 SOS/SOI Technology Conference. pp. 63-64.

Conference or Workshop Item

Homewood, KP, Lourenço, MA and Gwilliam, RM (2010) 1.1 to 1.6 μm silicon light emitting diodes and optical gain In: 7th IEEE GFP, 2010-09-01 - 2010-09-03, Beijing, China.

Lourenço, MA, Wong, L, Gwilliam, RM and Homewood, KP (2010) Luminescence of Tm3+in dislocation engineered silicon substrates In: 7th IEEE GFP, 2010-09-01 - 2010-09-03, Beijing, China.

Antwis, L, Wong, L, Smith, A, Homewood, K, Jeynes, C and Gwilliam, R (2010) Optimization and characterisation of amorphous iron disilicide formed by ion beam mixing of Fe/Si multilayer structures for photovoltaic applications In: Ion Implantation Technology 2101: 18th International Conference on Ion Implantation Technology IIT 2010, 2010-06-06 - 2010-06-11, Kyoto, Japan.

Milosavljevic, M, Lourenco, MA, Shao, G, Gwilliam, RM and Homewood, KP (2008) Formation of dislocation loops in silicon by ion irradiation for silicon light emitting diodes In: 9th European Conference on Accelerators in Applied Research and Technology, 2007-09-03 - 2007-09-07, Florence, ITALY.

Gao, Y, Chen, RS, Zhou, MY, Lourenco, MA, Homewood, KP and Shao, G (2008) Structural, electronic, and optical properties of Mn4Si 7 In: Sixth International Conference on Thin Film Physics and Applications (TFPA 2007), 2007-09-25 - 2007-09-28, Shanghai, China.

Lourenco, MA, Milosavljevic, M, Shao, G, Gwilliam, RM and Homewood, KP (2007) Dislocation engineered silicon light emitting devices In: Asia-Pacific Conference on Semiconducting Silicides, 2006-07-29 - 2006-07-31, Kyoto, JAPAN.

Wong, SP, Chow, CF, Roller, J, Chong, YT, Li, Q, Lourenco, MA and Homewood, KP (2007) Structures and light emission properties of nanocrystalline FeSi2/Si formed by ion beam synthesis with a metal vapor vacuum arc ion source In: Asia-Pacific Conference on Semiconducting Silicides, 2006-07-29 - 2006-07-31, Kyoto, JAPAN.

Ishibashi, Y, Kobayashi, T, Prins, AD, Nakahara, J, Lourenco, MA, Gwilliam, RM and Homewood, KP (2007) Excitation and pressure effects on photoluminescence from dislocation engineered silicon material In: 12th International Conference on High Pressure Semiconductor Physics (HPSP-12), 2006-07-31 - 2006-08-03, Barcelona, SPAIN.

Lourenco, MA, Milosavljevic, M, Shao, G, Gwilliam, RM and Homewood, KP (2006) Boron engineered dislocation loops for efficient room temperature silicon light emitting diodes In: 3rd International Conference on Materials for Advanced Technologies/9th International Conference on Advanced Materials, 2005-07-03 - 2005-07-08, Singapore, SINGAPORE.

Gwilliam, R, Lourenco, MA, Milosavljevic, M, Homewood, KP and Shao, G (2005) Dislocation engineering for Si-based light emitting diodes In: Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting, 2005-05-31 - 2005-06-03, Strasbourg, FRANCE.

Chow, CF, Wong, SP, Gao, Y, Ke, N, Li, Q, Cheung, WY, Lourenco, MA and Homewood, KP (2005) Electroluminescence properties of Si MOS structures with incorporation of FeSi2 precipitates formed by iron implantation In: Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting, 2005-05-31 - 2005-06-03, Strasbourg, FRANCE.

Lourenco, MA, Milosavljevic, M, Galata, S, Siddiqui, MSA, Shao, G, Gwilliam, RM and Homewood, KP (2005) Silicon-based light emitting devices In: 5th International Conference on Ion Implantation and Other Applications of Ions and Electrons (ION2004), 2004-06-14 - 2004-06-17, Kazimierz Dolny, POLAND.

Homewood, KP, Lourenco, MA, Milosavljevic, M, Shao, G and Gwilliam, RM (2005) Dislocation engineered silicon for light emission

Prins, AD, Ishibashi, Y, Sasahara, S, Nakahara, J, Lourenco, MA, Gwilliam, RM, Kobayashi, T, Nagata, A and Homewood, KP (2004) Silicon-based light emitting diode material studied under high pressure In: 11th International Conference on High-Pressure Semiconductor Physics (HPSP-11), 2004-08-02 - 2004-08-05, Berkeley, CA.

Lourenco, MA, Milosavljevic, M, Gwilliam, RM, Shao, G and Homewood, KP (2004) Experimental and theoretical study of the electroluminescence temperature dependence of iron disilicide light-emitting devices In: 8th IUMRS International Conference on Advanced Materials (ICAM 2003), 2003 - ?, Yokohama, JAPAN.

Milosavljevic, M, Shao, G, Gwilliam, RM, Gao, Y, Lourenco, MA, Valizadeh, R, Colligon, JS and Homewood, KP (2004) Semiconducting amorphous FeSi2 layers synthesized by co-sputter deposition In: 8th IUMRS International Conference on Advanced Materials (ICAM 2003), 2003 - ?, Yokohama, JAPAN.

Png, CE, Reed, GT, Headley, WR, Homewood, KP, Liu, A, Paniccia, M, Atta, RMH, Ensell, G, Evans, AGR, Hak, D and Cohen, O (2004) Design and experimental results of small silicon-based optical modulators In: Conference on Optoelectronic Integrated Circuits VI, 2004-01-26 - ?, San Jose, CA.

Milosavljevic, M, Lourenco, MA, Siddiqui, MSA, Shao, G, Gwilliam, RM and Homewood, KP (2004) TEM studies of dislocation-based silicon light emitting devices In: Institute-of-Physics-Electron-Microscopy and Analysis-Group Conference (EMAG 2003), 2003-09-03 - 2003-09-05, Univ Oxford, Examinat Sch, Oxford, ENGLAND.

Lourenco, MA, Gwilliam, RM, Shao, G and Homewood, KP (2003) Dislocation engineered beta-FeSi2 light emitting diodes In: 13th International Conference on Ion Beam Modification of Materials, 2002-09-01 - 2002-09-06, KOBE, JAPAN.

Lourenco, MA, Siddiqui, MSA, Gwilliam, RM, Shao, G and Homewood, KP (2003) Efficient silicon light emitting diodes made by dislocation engineering In: Spring Meeting of the European-Materials-Research-Society (E-MRS), 2002-06-18 - 2002-06-21, STRASBOURG, FRANCE.

Lourenco, MA, Siddiqui, MSA, Shao, G, Gwilliam, RM and Homewood, KP (2003) Dislocation-based silicon light emitting devices In: Conference of the NATO Advanced Research Workshop on Towards the First Silicon Laser, 2002-09-21 - 2002-09-26, TRENT, ITALY.

Milosavljevic, M, Shao, G, Bibic, N, McKinty, CN, Jeynes, C and Homewood, KP (2002) Synthesis of amorphous FeSi2 by ion beam mixing In: 7th European Conference on Accelerators in Applied Research and Technology, 2001-08-21 - 2001-08-24, UNIV SURREY, GUILDFORD, ENGLAND.

Lourenco, MA, Ng, WL, Shao, G, Gwilliam, RM and Homewood, KP (2002) Dislocation engineered silicon light emitting diodes In: Silicon-based and Hybrid Optoelectronics IV Conference, 2002-01-23 - 2002-01-24, SAN JOSE, CA.

Gwilliam, R, Lourenco, MA, Galata, S, Homewood, KP and Shao, G (2002) Efficient optical sources in silicon using dislocation engineering In: 8th Conference on Photonics for Space Environments VIII, 2002-07-09 - 2002-07-10, SEATTLE, WA.

Lourenco, MA, Gwilliam, RM, Shao, G and Homewood, KP (2002) Efficient silicon light emitting diodes made by dislocation engineering In: Symposium on Defect and Impurity Engineered Semiconductors and Devices III held at the 2002 MRS Spring Meeting, 2002-04-01 - 2002-04-05, SAN FRANCISCO, CA.

Lourenco, MA, Butler, TM, Kewell, AK, Gwilliam, RM, Kirkby, KJ and Homewood, KP (2001) Electrical, electronic and optical characterisation of ion beam synthesised beta-FeSi2 light emitting devices In: 12th International Conference on Ion Beam Modification of Materials (IBMM2000), 2000-09-03 - 2000-09-08, CANELA, BRAZIL.

Milosavljevic, M, Shao, G, Gwilliam, RM, Jeynes, C, McKinty, CN and Homewood, KP (2001) Properties of beta-FeSi2 grown by combined ion irradiation and annealing of Fe/Si bilayers In: 12th International Conference on Ion Beam Modification of Materials (IBMM2000), 2000-09-03 - 2000-09-08, CANELA, BRAZIL.

Lourenco, MA, Knights, AP, Homewood, KP, Gwilliam, RM, Simpson, PJ and Mascher, P (2001) A comparative study of vacancies produced by proton implantation of silicon using positron annihilation and deep level transient spectroscopy In: 12th International Conference on Ion Beam Modification of Materials (IBMM2000), 2000-09-03 - 2000-09-08, CANELA, BRAZIL.

Homewood, KP, Reeson, KJ, Gwilliam, RM, Kewell, AK, Lourenco, MA, Shao, G, Chen, YL, Sharpe, JS, McKinty, CN and Butler, T (2001) Ion beam synthesized silicides: growth, characterization and devices In: 46th Spring Meeting of the Japan-Society-of-Applied-Physics, 1999 - ?, CHIBA, JAPAN.

Hoettges, KF, Gwilliam, RM, Homewood, KP and Stevenson, D (2001) Fast prototyping of microfluidic devices for separation science In: 23rd International Symposium on Chromatography, 2000-10-01 - 2000-10-05, LONDON, ENGLAND.

Young, WT, Silva, SRP, Anguita, JV, Shannon, JM, Homewood, KP and Sealy, BJ (2000) Low temperature growth of gallium nitride In: 10th European Conference on Diamond, Diamond-Like Materials, Nitrides and Silicon Carbide (Diamond 1999), 1999-09-12 - 1999-09-17, PRAGUE, CZECH REPUBLIC.

Sharpe, JS, Chen, YL, Gwilliam, RM, Kewell, AK, Ledain, S, McKinty, CN, Lourenco, MA, Butler, T, Homewood, KP, Kirkby, KJR and Shao, G (2000) Structural characterisation of ion beam synthesised Ru2Si3 In: 14th International Conference on Ion Beam Analysis/6th European Conference on Accelerators in Applied Research and Technology, 1999-07-26 - 1999-07-30, DRESEDEN, GERMANY.

McKinty, CN, Kewell, AK, Sharpe, JS, Lourenco, MA, Butler, TM, Valizadeh, R, Colligon, JS, Kirkby, KJR and Homewood, KP (2000) The optical properties of beta-FeSi2 fabricated by ion beam assisted sputtering In: 14th International Conference on Ion Beam Analysis/6th European Conference on Accelerators in Applied Research and Technology, 1999-07-26 - 1999-07-30, DRESEDEN, GERMANY.

Kewell, AK, Lourenco, MA, Gwilliam, RM, Sharpe, J, McKinty, C, Butler, T, Kirkby, KJR and Homewood, KP (2000) Light-emitting diodes fabricated in silicon/iron disilicide In: 2nd Conference on Silicon-Based Optoelectronics, 2000-01-28 - ?, SAN JOSE, CA.

Young, WT, Silva, SRP, Benyoucef, M, Kuball, M, Anguita, JV, Shannon, JM, Homewood, KP and Sealy, BJ (1999) The growth of gallium nitride films produced by reactive sputtering at low temperature In: 3rd International Conference on Nitride Semiconductors (ICNS 99), 1999-07-05 - 1999-07-09, MONTPELLIER, FRANCE.

Knights, AP, Morrison, DJ, Wright, NG, Johnson, CM, O'Neill, AG, Ortolland, S, Homewood, KP, Lourenco, MA, Gwilliam, RM and Coleman, PG (1999) The effect of annealing on argon implanted edge terminations for 4H-SiC Schottky diodes In: Symposium on Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications-1999 at the 1999 MRS Spring Meeting, 1999-04-05 - 1999-04-08, SAN FRANCISCO, CA.

Silva, SRP, Rusli, , Homewood, KP and Amaratunga, GAJ (1998) Superlattice structures based on amorphous carbon In: 17th International Conference on Amorphous and Microcrystalline Semiconductors - Science and Technology (ICAMS 17), 1997-08-25 - 1997-08-29, BUDAPEST, HUNGARY.

Beanland, R, Lourenco, MA and Homewood, KP (1997) Relaxation of strained epitaxial layers by dislocation rotation, reaction and generation during annealing In: Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials, 1997-04-07 - 1997-04-10, UNIV OXFORD, OXFORD, ENGLAND.

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