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Items where Author is "Hemment, Peter L. F."

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Waite, A. M., Lloyd, N. S., Ashburn, P., Evans, A. G. R., Ernst, T., Achard, H., Deleonibus, S., Wang, Y. and Hemment, Peter L. F. (2003) Raised source/drain (RSD) for 50nm MOSFETs - effect of epitaxy layer thickness on short channel effects 33rd Conference on European Solid-State Device Research, 2003. pp. 223-226.

Vyatkin, A. F. , Avrutin, V. S., Izyumskaya, N. F., Egorov, V. K., Starkov, V. V., Zinenko, V. I., Smirnova, I. A., Hemment, Peter L. F., Nejim, A., Vdovin, V. I. and Yugova, T. G. (2000) Ion beam induced strain relaxation in pseudomorphous epitaxial SiGe layers Conference on Ion Implantation Technology, 2000.. pp. 70-72.

Graouil, H., Nejim, A., Hemment, Peter L. F., Riley, L., Hall, S., Mitchell, M. and Ashburn, P. (2000) SiGe device architectures synthesised by local area Ge+ implantation-structural and electrical characterisation Conference on Ion Implantation Technology, 2000. pp. 38-41.

Jianqing, Wen, Evans-Freeman, J., Peaker, A. R., Zhang, J. P., Hemment, Peter L. F., Marsh, C. D. and Booker, G. R. (2000) Role of oxygen on the implantation related residual defects in silicon IEEE Proceedings of Electron Devices Meeting, Hong Kong, 2000.. pp. 112-115.

Mitchell, M., Nigrin, S., Cristiano, F., Ashburn, P. and Hemment, Peter L. F. (1999) Characterisation of NPN and PNP SiGe heterojunction bipolar transistors formed by Ge+ implantation 1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. pp. 254-259.

Cristiano, F., Nejim, A. and Hemment, Peter L. F. (1998) The surface proximity effect on the formation of extended defects in ion beam synthesised SiGe/Si heterostructures 1998 International Conference on Ion Implantation Technology Proceedings, 2. pp. 913-916.

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