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Items where Author is "Hemment, P"

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El Mubarek, H. A. W., Karunaratne, M., Bonar, J. M., Dilliway, G. D., Wang, Y., Hemment, P. L. F., Willoughby, A. F. and Ashburn, P. (2005) Effect of fluorine implantation dose on boron transient enhanced diffusion and boron thermal diffusion in Si<sub>1-<i>x</i></sub>Ge<sub><i>x</sub></i> x, 52 (4). pp. 518-526.

Bain, M., El Mubarek, A. W., Bonar, J. M., Wang, Y., Buiu, O., Gamble, H., Armstrong, B. M., Hemment, P. L. F., Hall, Steven and Ashburn, Peter (2005) SiGe HBTs on bonded SOI incorporating buried silicide layers IEEE Transactions on Electron Devices. pp. 317-324.

El Mubarek, H A, Karunaratne, M, Bonar, J M, Dilliway, G D, Wang, Y, Hemment, P L, Willoughby, A F and Ashburn, P (2005) Effect of Fluorine Implantation Dose on Boron Transient Enhanced Diffusion and Boron Thermal Diffusion in S1-xGex IEEE Transactions on Electron Devices, 52 (4).

Bain, M, El Mubarek, H A, Bonar, J M, Wang, Y, Buiu, O, Gamble, H, Armstrong, B M, Hemment, P L, Hall, S and Ashburn, P (2005) SiGeHBTs on Bonded SOI Incorporating Buried Silicide Layers IEEE Transactions on Electron Devices, 52 (3).

El Mubarek, H A, Bonar, J M, Dilliway, G D, Ashburn, P, Karunaratne, M, Willoughby, A F, Wang, Y, Hemment, P L, Price, R, Zhang, J and Ward, P (2004) Effect of Fluorine Implantation Dose on Boron Thermal Diffusion in Silicon Journal of Applied Physics, 96 (8).

Waite, A. M., Lloyd, N. S., Ashburn, P., Evans, A. G. R., Ernst, T., Achard, H., Deleonibus, S., Wang, Y. and Hemment, Peter L. F. (2003) Raised source/drain (RSD) for 50nm MOSFETs - effect of epitaxy layer thickness on short channel effects 33rd Conference on European Solid-State Device Research, 2003. pp. 223-226.

Kunz, V. Dominik, Uchino, Takashi, De Groot, C. H. (Kees), Ashburn, Peter, Donaghy, David C., Hall, Steven, Wang, Yun and Hemment, P. L. F. (2003) Reduction of parasitic capacitance in vertical MOSFETs by spacer local oxidation IEEE Transactions on Electron Devices. pp. 1487-1493.

Schiz, J. F. W., Lamb, Andrew C., Cristiano, Fuccio, Bonar, J. M., Ashburn, Peter, Hall, Stephen and Hemment, P. L. F. (2001) Leakage current mechanisms in SiGe HBTs fabricated using selective and nonselective epitaxy IEEE Transactions on Electron Devices. pp. 2492-2499.

Vyatkin, A. F., Avrutin, V. S., Izyumskaya, N. F., Egorov, V. K., Starkov, V. V., Zinenko, V. I., Smirnova, I. A., Hemment, Peter L. F., Nejim, A., Vdovin, V. I. and Yugova, T. G. (2000) Ion beam induced strain relaxation in pseudomorphous epitaxial SiGe layers Conference on Ion Implantation Technology, 2000.. pp. 70-72.

Graouil, H., Nejim, A., Hemment, Peter L. F., Riley, L., Hall, S., Mitchell, M. and Ashburn, P. (2000) SiGe device architectures synthesised by local area Ge+ implantation-structural and electrical characterisation Conference on Ion Implantation Technology, 2000. pp. 38-41.

Jianqing, Wen, Evans-Freeman, J., Peaker, A. R., Zhang, J. P., Hemment, Peter L. F., Marsh, C. D. and Booker, G. R. (2000) Role of oxygen on the implantation related residual defects in silicon IEEE Proceedings of Electron Devices Meeting, Hong Kong, 2000.. pp. 112-115.

Mitchell, M., Nigrin, S., Cristiano, F., Ashburn, P. and Hemment, Peter L. F. (1999) Characterisation of NPN and PNP SiGe heterojunction bipolar transistors formed by Ge+ implantation 1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. pp. 254-259.

Nejim, A., Cristiano, F., Knights, A. P., Barradas, N. P., Hemment, P. L. F. and Coleman, P. G. (1998) Dose rate dependence of residual defects in device grade Si/SiGe heterostructures formed by ion beam synthesis Proceedings of the 1998 International Conference on Ion Implantation Technology, 2. pp. 692-695.

Cristiano, F., Nejim, A. and Hemment, Peter L. F. (1998) The surface proximity effect on the formation of extended defects in ion beam synthesised SiGe/Si heterostructures 1998 International Conference on Ion Implantation Technology Proceedings, 2. pp. 913-916.

Niby, MA, Li, DQ, Lourenco, MA, Nejim, A, Homewood, KP, Hemment, PLF, Ishidida, E, Current, M, Banerjee, S, Larson, L, Mehta, S, Tasch, A, Smith, TC and Romig, T (1997) The lifetime distribution of excess carriers in H+ ion implanted silicon by photoconductive frequency resolved spectroscopy ION IMPLANTATION TECHNOLOGY - 96. pp. 668-671.

Barklie, R. C., O'Raifeartaigh, C., Nylandsted-Larsen, A., Priolo, F., Lulli, G., Grob, J. J., Mesli, A., Lindner, J. K. N., Cristiano, F. and Hemment, P. L. F. (1996) Ion implantation induced damage in relaxed Si1-xGex Proceedings of the 11th International Conference on Ion Implantation Technology.

Nejim, A., Cristiano, F., Gwilliam, R. M., Hemment, P. L. F., Hope, D. A. O., Newey, J. and Houlton, M. R. (1996) Synthesis of Si/Si1-xGex/Si heterostructures for device applications using Ge+ implantation into silicon Proceedings of the 11th International Conference on Ion Implantation Technology.

Lin, Chenglu, Wang, Lianwai, Zhu, Shiyang, Liu, Ping, Hemment, P. L. F. and Zou, Shichang (1995) Investigation of Ti, Co and Fe silicides on SIMOX materials 4th International Conference on Solid-State and Integrated Circuit Technology. pp. 248-252.

Lu, Dian-Tong, Qingcheng, Zheng, Mitchell, Ian V., Hemment, P. L. F. and Ryssel, H. (1995) A new determination method of very low Fe contamination by UFS 4th International Conference on Solid-State and Integrated Circuit Technology.

Giles, L. F., Nejim, A., Marsh, C. D., Hemment, P. L. F. and Booker, G. R. (1993) Formation of oxidation induced stacking sacrificial thinning of SIMOX materials Proceedings of the 1993 International SOI Conference. pp. 54-55.

Marsh, C. D., Booker, G. R., Nejim, A., Giles, L. F., Hemment, P. L. F., Li, Y., Chater, R. J., Kilner, J. A., Wainwright, S. and Hall, S. (1992) Identification of Optimal Doses for Device Quality Thin-Film and Standard Simox Structures Formed by Low (50keV, 70keV or 90keV) or High (200keV) Energy Oxygen Implantation Proceedings of the 1992 International SOI Conference. pp. 6-8.

Pérez-Rodríguez, A., Martín, E., Samitier, J., Jiménez, J., Morante, J. R., Hemment, P. L. F. and Homewood, K. P. (1991) In depth resolved analysis of SIMOX materials by optical characterization techniques Proceedings of the IEEE International SOI Conference, 1991. pp. 110-111.

Robinson, A. K., Bussman, U., Hemment, P. L. F., Sharma, V. and Kilner, J. A. (1990) Dopant redistribution and activation in thin film SOI/SIMOX substrates 1990 IEEE SOS/SOI Technology Conference. pp. 71-72.

Perez, A., Samitier, J., Cornet, A., Morante, J. R., Hemment, P. L. F. and Homewood, K. P. (1990) Infrared reflection spectroscopy analysis of SIMOX material obtained by multiple implant IEEE 1990 SOS/SOI Technology Conference. pp. 63-64.

Bussman, U., Robinson, A. K., Hemment, P. L. F. and Campisi, G. J. (1990) SOI device islands formed by oxygen implantation through patterned masking layers IEEE 1990 SOS/SOI Technology Conference. pp. 51-52.

Papaioannou, G., Ioannou-Sugleridis, V., Cristoloveanu, S., Bruel, M. and Hemment, P. (1988) Investigation of trapping properties in SIMOX films by photo-induced transient current spectroscopy IEEE Proceedings of the 1988 SOS/SOI Technology Workshop.

Godfrey, D. J., Chater, R., Robinson, A. K., Augustus, P. D., Alderman, J. R., Davis, J. R., Kilner, J. and Hemment, P. L. F. (1988) Measurement and modelling of arsenic and boron diffusion in oxygen implanted silicon-on-insulator (SOI) layers IEEE Proceedings of the 1988 SOS/SOI Technology Workshop.

Robinson, A. K., Reeson, K. J., Hemment, P. L. F., Thomas, N., Davis, J. R., Christensen, K. N., Marsh, C., Booker, G. R., Kilner, J. A. and Chater, R. J. (1988) Total dielectric isolation (TDI) of silicon device islands by a single O+implantation stage IEEE Proceedings of the 1988 SOS/SOI Technology Workshop.

Thomas, N. J., Davis, J. R., Reeson, K. J., Hemment, P. L. F., Keen, J., Castledine, J., Brumhead, D., Goulding, M., Alderman, J., Farr, J. P. G. and Earwaker, L. G. (1988) A comparison of fully depleted SOI-CMOS transistors in FIPOS and SIMOX substrates IEEE Proceedings of the 1988 SOS/SOI Technology Workshop.

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