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Items where Author is "HOMEWOOD, K"

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Number of items: 8.

Article

LOURENCO, MA, HOMEWOOD, KP and HEMMENT, PLF (1993) EVALUATION OF SILICON-ON-INSULATOR SUBSTRATES USING PHOTOCONDUCTIVE FREQUENCY-RESOLVED SPECTROSCOPY JOURNAL OF APPLIED PHYSICS, 74 (11). pp. 6754-6758.

LOURENCO, MA and HOMEWOOD, KP (1993) PHOTOCONDUCTIVE FREQUENCY-RESOLVED SPECTROSCOPY OF SEMICONDUCTORS - AN ANALYSIS OF LIFETIME DISTRIBUTIONS SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 8 (7). pp. 1277-1282.

LOURENCO, MA, HOMEWOOD, KP and MCLELLAN, RD (1993) THE ANALYSIS OF THE TEMPERATURE-DEPENDENCE OF PHOTOCONDUCTIVE FREQUENCY-RESOLVED SPECTROSCOPY IN THE PRESENCE OF CARRIER TRAPPING - APPLICATION TO POLYCRYSTALLINE SILICON JOURNAL OF APPLIED PHYSICS, 73 (6). pp. 2958-2964.

BRADLEY, I, GILLIN, WP, HOMEWOOD, KP and WEBB, RP (1993) THE EFFECTS OF ION-IMPLANTATION ON THE INTERDIFFUSION COEFFICIENTS IN INXGA1-XAS/GAAS QUANTUM-WELL STRUCTURES JOURNAL OF APPLIED PHYSICS, 73 (4). pp. 1686-1692.

DUNSTAN, DJ, DIXON, RH, KIDD, P, HOWARD, LK, WILKINSON, VA, LAMBKIN, JD, JEYNES, C, HALSALL, MP, LANCEFIELD, D, EMENY, MT, GOODHEW, PJ, HOMEWOOD, KP, SEALY, BJ and ADAMS, AR (1993) GROWTH AND CHARACTERIZATION OF RELAXED EPILAYERS OF INGAAS ON GAAS JOURNAL OF CRYSTAL GROWTH, 126 (4). pp. 589-600.

GILLIN, WP, BRADLEY, I, HOMEWOOD, KP and WEBB, RP (1993) THE EFFECT OF GALLIUM IMPLANTATION ON THE INTERMIXING OF INGAAS/GAAS STRAINED QUANTUM-WELLS SOLID STATE COMMUNICATIONS, 85 (3). pp. 197-198.

KOZANECKI, A, CHAN, M, JEYNES, C, SEALY, B and HOMEWOOD, K (1991) LATTICE LOCATION OF ERBIUM IMPLANTED INTO GAAS SOLID STATE COMMUNICATIONS, 78 (8). pp. 763-766.

Conference or Workshop Item

LOURENCO, MA, HOMEWOOD, KP and CONSIDINE, L (1994) RELAXATION OF STRAINED INGAAS/GAAS LAYERS UNDER THERMAL-PROCESSING In: 2nd International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC 94), 1994-05-18 - 1994-05-20, PARMA, ITALY.

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