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Items where Author is "HEASMAN, K"

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Number of items: 8.

Article

TANG, YS, HEASMAN, KC, GILLIN, WP and SEALY, BJ (1989) CHARACTERISTICS OF RARE-EARTH ELEMENT ERBIUM IMPLANTED IN SILICON APPLIED PHYSICS LETTERS, 55 (5). pp. 432-433.

BLOOD, P, FLETCHER, ED, WOODBRIDGE, K, HEASMAN, KC and ADAMS, AR (1989) INFLUENCE OF THE BARRIERS ON THE TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN GAAS ALGAAS QUANTUM WELL LASERS IEEE JOURNAL OF QUANTUM ELECTRONICS, 25 (6). pp. 1459-1468.

HEASMAN, KC, BLOOD, P, ADAMS, AR and FLETCHER, ED (1987) PRESSURE-DEPENDENCE OF THE NONRADIATIVE LIFETIME IN GAAS/AIGAAS DOUBLE-HETEROSTRUCTURE LASERS JOURNAL OF APPLIED PHYSICS, 62 (8). pp. 3448-3450.

HEASMAN, KC, ADAMS, AR and PLUMB, RG (1987) SCANNING THE LASER GAIN SPECTRUM USING DISTRIBUTED FEEDBACK AND HYDROSTATIC-PRESSURE ELECTRONICS LETTERS, 23 (11). pp. 555-557.

HEASMAN, KC, ADAMS, AR, GREENE, PD and HENSHALL, GD (1987) PRESSURE-DEPENDENCE OF THRESHOLD CURRENT AND CARRIER LIFETIME IN 1.55-MU-M GAINASP LASERS ELECTRONICS LETTERS, 23 (10). pp. 492-493.

OREILLY, EP, HEASMAN, KC, ADAMS, AR and WITCHLOW, GP (1987) CALCULATIONS OF THE THRESHOLD CURRENT AND TEMPERATURE SENSITIVITY OF A (GAIN)AS STRAINED QUANTUM-WELL LASER OPERATING AT 1.55 MU-M SUPERLATTICES AND MICROSTRUCTURES, 3 (2). pp. 99-102.

HEASMAN, KC, HAYES, J, ADAMS, AR and GREENE, PD (1981) TEMPERATURE-DEPENDENCE OF THE TRANSFERRED ELECTRON THRESHOLD CURRENTIN IN1-XGAXASYP1-Y ELECTRONICS LETTERS, 17 (20). pp. 756-757.

Conference or Workshop Item

BRUTON, TM and HEASMAN, KC (1993) THE ACHIEVEMENT OF 20-PERCENT EFFICIENCY IN A CZ SILICON SOLAR-CELL UNDER CONCENTRATION In: 23rd IEEE Photovoltaic Specialists Conference, 1993-05-10 - 1993-05-14, LOUISVILLE, KY.

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