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Items where Author is "Gwilliam, R"

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Scapellato, GG, Boninelli, S, Napolitani, E, Bruno, E, Smith, AJ, Mirabella, S, Mastromatteo, M, De Salvador, D, Gwilliam, R, Spinella, C, Carnera, A and Priolo, F (2011) Self-interstitials injection in crystalline Ge induced by GeO2 nanoclusters PHYSICAL REVIEW B, 84 (2). ? - ?. ISSN 1098-0121

Loiacono, R, Reed, GT, Mashanovich, GZ, Gwilliam, R, Henley, SJ, Hu, YF, Feldesh, R and Jones, R (2011) Laser erasable implanted gratings for integrated silicon photonics Optics Express, 19 (11). 10728 - 10734. ISSN 1094-4087

Lourenço, M, Gwilliam, R and Homewood, K (2011) Eye-safe 2 μm luminescence from thulium-doped silicon. Opt Lett, 36 (2). 169 - 171. ISSN 0146-9592

Wright, NM, Thomson, DJ, Litvinenko, KL, Headley, WR, Smith, AJ, Knights, AP, Deane, JHB, Gardes, FY, Mashanovich, GZ, Gwilliam, R and Reed, GT (2008) Free carrier lifetime modification for silicon waveguide based devices OPT EXPRESS, 16 (24). 19779 - 19784. ISSN 1094-4087

Rudawski, N G, Jones, K S and Gwilliam, R (2008) Dopant-Stress Synergy in Si Solid-Phase Epitaxy Applied Physics Letters, 92 (23). ISSN 00036951

Pantouvaki, M, Renaud, C C, Cannard, P, Robertson, M J, Gwilliam, R and Seeds, A J (2007) Fast Tuneable InGaAsP DBR Laser Using Quantum-Confined Stark-Effect-Induced Refractive Index Change IEEE Journal of Selected Topics in Quantum Electronics, 13 (5). ISSN 1077-260X

Renaud, C C, Pantouvaki, M, Gregoire, S, Lealman, I, Cannard, P, Cole, S, Moore, R, Gwilliam, R and Seeds, A J (2007) A Monolithic MQW InP-InGaAsP-Based Optical Comb Generator IEEE Journal of Quantum Electronics, 43 (11). ISSN 0018-9197

Rudawski, N G, Jones, K S and Gwilliam, R (2007) Solid Phase Epitaxy in Uniaxially Stressed (001) Si Applied Physics Letters, 91 (17). ISSN 00036951

Smith, AJ, Cowern, NEB, Gwilliam, R, Sealy, BJ, Colombeau, B, Collart, EJH, Gennaro, S, Giubertoni, D, Bersani, M and Barozzi, M (2006) Vacancy-engineering implants for high boron activation in silicon on insulator APPLIED PHYSICS LETTERS, 88 (8). ? - ?. ISSN 0003-6951

Han, S Y, Hite, J, Thaler, G T, Frazier, R M, Abernathy, C R, Pearton, S J, Choi, H K, Lee, W O, Park, Y D, Zavada, J M and Gwilliam, R (2006) Effect of Gd Implantation on the Structural and Magnetic Properties of GaN and AlN Applied Physics Letters, 88 (4). ISSN 00036951

Zavada, J M, Nepal, N, Lin, J Y, Jiang, H X, Brown, E, Hommerich, U, Hite, J, Thaler, G T, Abernathy, C R, Pearton, S J and Gwilliam, R (2006) Ultraviolet Photoluminescence from Gd-implanted AlN Epilayers Applied Physics Letters, 89 (15). ISSN 00036951

Whelan, S, Kelly, MJ, Gwilliam, R, Jeynes, C and Bongiorno, C (2005) The dependence of the radiation damage formation on the substrate implant temperature in GaN during Mg ion implantation JOURNAL OF APPLIED PHYSICS, 98 (1). ? - ?. ISSN 0021-8979

Bollet, F, Gillin, W P, Hopkinson, M and Gwilliam, R (2005) Concentration Dependent Interdiffusion in InGaAs/GaAs as Evidenced by High Resolution X-ray Diffraction and Photoluminescence Spectroscopy Journal of Applied Physics, 97 (1). ISSN 00218979

Cowern, NEB, Smith, AJ, Colombeau, B, Gwilliam, R, Sealy, BJ and Collart, EJH (2005) Understanding, modeling and optimizing vacancy engineering for stable highly boron-doped ultrashallow junctions In: IEEE International Electron Devices Meeting, 2005-12-05 - 2005-12-07, Washington, DC.

Pantouvaki, M, Fice, M J, Feced, R, Burr, E P, Gwilliam, R, Krysa, A B, Roberts, J S and Seeds, A J (2004) 10-Gb/s All-Optical 2R Regeneration Using an MQW Fabry-Perot Saturable Absorber and a Nonlinear Fiber IEEE Photonics Technology Letters, 16 (2). ISSN 1041-1135

Alzanki, T, Gwilliam, R, Emerson, N and Sealy, B J (2004) Differential Hall Effect Profiling of Ultrashallow Junctions in Sb Implanted Silicon Applied Physics Letters, 85 (11). ISSN 00036951

Smith, A J, Colombeau, B, Gwilliam, R, Collart, E, Cowern, N E B and Sealy, B J (2004) Doping and Mobility Profiles in Defect-Engineered Ultra-Shallow Junctions: Bulk and SOI

Claudio, G, Kirkby, K J, Bersani, M, Low, R, Sealy, B J and Gwilliam, R (2004) Effect of the Tilt Angle on Antimony in Silicon Implanted Wafers Journal of Applied Physics, 95 (10). ISSN 00218979

Claudio, G, Jeynes, C, Kirkby, KJ, Sealy, BJ, Gwilliam, R, Low, R, Brown, B, Alford, TL, Nastasi, M and Vella, MC (2003) Electrical behaviour of arsenic implanted silicon wafers at large tilt angle IIT2002: ION IMPLANTATION TECHNOLOGY, PROCEEDINGS. 614 - 617.

Too, P, Ahmed, S, Jakiela, R, Barcz, A, Kozanecki, A, Sealy, B J and Gwilliam, R (2003) Implant Isolation of Both n-Type InP and InGaAs by Iron Irradiation: Effect of Post-Implant Annealing Temperature In: The 11th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003..

Ahmed, S, Amirov, K, Larsson, U, Too, P, Sealy, B J and Gwilliam, R (2003) Thermal Processing Effects in Proton-Isolated N-Type GaAs Devices In: The 11th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003..

Gwilliam, R (2002) Boron Bromide as a Source Precursor for Low Energy Applications In: SCS 2003. International Symposium on Signals, Circuits and Systems. Proceedings (Cat. No.03EX720).

Too, P, Ahmed, S, Sealy, B J and Gwilliam, R (2002) An Effective Electrical Isolation Scheme by Iron Implantation at Different Substrate Temperatures In: SCS 2003. International Symposium on Signals, Circuits and Systems. Proceedings (Cat. No.03EX720).

Curry, RJ, Gillin, WP, Knights, AP and Gwilliam, R (2000) Silicon-based organic light-emitting diode operating at a wavelength of 1.5 μm Applied Physics Letters, 77 (15). 2271 - 2273. ISSN 0003-6951

This list was generated on Tue Sep 2 07:57:47 2014 IST.

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