University of Surrey

Test tubes in the lab Research in the ATI Dance Research

Items where Author is "Giubertoni, D"

Up a level
Export as [feed] RSS 1.0 [feed] RSS 2.0
Group by: Item Type | No Grouping
Number of items: 26.

Article

Secchi, M, Demenev, E, Colaux, JL, Giubertoni, D, Dell'Anna, R, Iacob, E, Gwilliam, M, Jeynes, C and Bersani, M (2015) Development of nanotopography during SIMS characterization of thin films of Ge1-xSnx alloy APPLIED SURFACE SCIENCE, 356. pp. 422-428.

Giubertoni, D, Demenev, E, Jestin, Y, Meirer, F, Gennaro, S, Iacob, E, Pepponi, G, Pucker, G, Bersani, M, Gupta, S, Saraswat, KC, Gwilliam, RM, Jeynes, C and Colaux, JL (2012) Solid phase epitaxial re-growth of Sn ion implanted germanium thin films AIP Conference Proceedings, 1496. pp. 103-106.

Giubertoni, D, Pepponi, G, Sahiner, MA, Kelty, SP, Gennaro, S, Bersani, M, Kah, M, Kirkby, KJ, Doherty, R, Foad, MA, Meirer, F, Streli, C, Woicik, JC and Pianetta, P (2010) Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 28 (1). C1B1-C1B5.

Giubertoni, D, Pepponi, G, Gennaro, S, Bersani, M, Sahiner, MA, Kelty, SP, Doherty, R, Foad, MA, Kah, M, Kirkby, KJ, Woicik, JC and Pianetta, P (2008) Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon JOURNAL OF APPLIED PHYSICS, 104 (10), ARTN 10371.

Sharp, JA, Smith, AJ, Webb, RP, Kirkby, KJ, Cowern, NEB, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA, Fazzini, PF and Cristiano, F (2008) Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing APPL PHYS LETT, 92 (8), 082109.

Sharp, JA, Smith, AJ, Webb, RP, Kirkby, KJ, Cowern, NEB, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA, Fazzini, PF and Cristiano, F (2008) Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing APPL PHYS LETT, 92 (8), 082109.

Bennett, NS, Cowern, NEB, Smith, AJ, Kah, M, Gwilliam, RM, Sealy, BJ, Noakes, TCQ, Bailey, P, Giubertoni, D and Bersani, M (2008) Differential Hall characterisation of ultrashallow doping in advanced Si-based materials Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 154-15 (1-3). pp. 229-233.

Ferri, M, Solmi, S, Giubertoni, D, Bersani, M, Hamilton, JJ, Kah, M, Kirkby, K, Collart, EJH and Cowern, NEB (2007) Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator JOURNAL OF APPLIED PHYSICS, 102 (10), ARTN 1.

Hamilton, JJ, Kirkby, KJ, Cowern, NEB, Collart, EJH, Bersani, M, Giubertoni, D, Gennaro, S and Parisini, A (2007) Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink APPLIED PHYSICS LETTERS, 91 (9), ARTN 0.

Hamilton, JJ, Collart, EJH, Bersani, M, Giubertoni, D, Gennaro, S, Bennett, NS, Cowern, NEB and Kirkby, KJ (2006) Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in silicon-on-insulator AIP Conference Proceedings, 866. pp. 73-75.

Gennaro, S, Giubertoni, D, Bersani, M, Foggiato, J, Yoo, WS, Gwilliam, R and Anderle, M (2006) The effect of flash annealing on the electrical properties of indium/carbon Co-implants in silicon AIP Conference Proceedings, 866. pp. 113-116.

Sharp, JA, Cowern, NEB, Webb, RP, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA and Kirkby, KJ (2006) Deactivation of B and BF2 profiles after non-melt laser annealing Materials Research Society Symposium Proceedings, 912. pp. 159-163.

Hamilton, JJ, Collart, EJH, Colombeau, B, Bersani, M, Giubertoni, D, Kah, M, Cowern, NEB and Kirkby, KJ (2006) Effect of B dose and Ge preamorphization energy on the electrical and structural properties of ultrashallow junctions in silicon-on-insulator Materials Research Society Symposium Proceedings, 912. pp. 45-50.

Sharp, JA, Cowern, NEB, Webb, RP, Kirkby, KJ, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA, Cristiano, F and Fazzini, PF (2006) Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans APPLIED PHYSICS LETTERS, 89 (19), ARTN 1.

Hamilton, JJ, Cowern, NEB, Sharp, JA, Kirkby, KJ, Collart, EJH, Colombeau, B, Bersani, M, Giubertoni, D and Parisini, A (2006) Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si/SiO2 interface APPLIED PHYSICS LETTERS, 89 (4), ARTN 0.

Hamilton, JJ, Cowern, NEB, Sharp, JA, Kirkby, KJ, Collart, EJH, Colombeau, B, Bersani, M, Giubertoni, D and Parisini, A (2006) Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si/SiO2 interface APPLIED PHYSICS LETTERS, 89 (4), ARTN 0.

Smith, AJ, Cowern, NEB, Gwilliam, R, Sealy, BJ, Colombeau, B, Collart, EJH, Gennaro, S, Giubertoni, D, Bersani, M and Barozzi, M (2006) Vacancy-engineering implants for high boron activation in silicon on insulator APPLIED PHYSICS LETTERS, 88 (8), ARTN 0.

Hamilton, JJ, Colombeau, B, Sharp, JA, Cowern, NEB, Kirkby, KJ, Collart, EJH, Bersani, M and Giubertoni, D (2006) Effect of buried Si SiO2 interface on dopant and defect evolution in preamorphizing implant ultrashallow junction Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 24 (1). pp. 442-445.

Smith, AJ, Cowern, NEB, Colombeau, B, Gwilliam, R, Sealy, BJ, Collart, EJH, Gennaro, S, Giubertoni, D, Bersani, M and Barozzi, M (2006) Junction stability of B doped layers in SOI formed with optimized vacancy engineering implants Ion Implantation Technology, 866. pp. 84-87.

Conference or Workshop Item

Ferri, M, Solmi, S, Giubertoni, D, Bersani, M, Hamilton, JJ, Kah, M, Cowern, NEB, Kirkby, K and Collart, EJH (2007) Boron pile-up phenomena during ultra shallow junction formation

Sharp, JA, Cowern, NEB, Webb, RP, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA and Kirkby, KJ (2006) Deactivation of low energy boron implants into pre-amorphised Si after non-melt laser annealing with multiple scans In: 16th International Conference on Ion Implantation Technology, 2006-06-11 - 2006-06-16, Marseille, FRANCE.

Sharp, JA, Cowern, NEB, Webb, RP, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA and Kirkby, KJ (2006) Deactivation of ultra shallow B and BF2 profiles after non-melt laser annealing In: Symposium on Sub Second Rapid Thermal Processing for Device Fabrication held at the 2006 MRS Spring Meeting, 2006-04-18 - 2006-04-19, San Francisco, CA.

Hamilton, JJ, Collart, EJH, Colombeau, B, Bersani, M, Giubertoni, D, Kah, M, Cowern, NEB and Kirkby, KJ (2006) Effect of B dose and Ge prearnorphization energy on the electrical and structural properties of ultrashallow junctions in silicon-on-insulator In: Symposium on Sub Second Rapid Thermal Processing for Device Fabrication held at the 2006 MRS Spring Meeting, 2006-04-18 - 2006-04-19, San Francisco, CA.

Gennaro, S, Giubertoni, D, Bersani, M, Foggiato, J, Yoo, WS and Gwilliam, R (2006) Nonconventional flash annealing on shallow indium implants in silicon In: 8th International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors, 2005-06-05 - 2005-06-08, Daytona Beach, FL.

Hamilton, JJ, Collart, EJH, Bersani, M, Giubertoni, D, Gennaro, S, Bennett, NS, Cowern, NEB and Kirkby, KJ (2006) Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in Silicon-on-insulator In: 16th International Conference on Ion Implantation Technology, 2006-06-11 - 2006-06-16, Marseille, FRANCE.

Hamilton, JJ, Collart, EJH, Colombeau, B, Jeynes, C, Bersani, M, Giubertoni, D, Sharp, JA, Cowern, NEB and Kirkby, KJ (2005) Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI In: 15th International Conference on Ion Implantation Technology, 2004-10-25 - 2004-10-27, Taipei, TAIWAN.

This list was generated on Tue Sep 26 09:09:15 2017 UTC.

Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800