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Items where Author is "Ghugre, S"

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Number of items: 8.

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Mason, PJR, Alharbi, T, Regan, PH, Marginean, N, Podolyak, Z, Simpson, EC, Alkhomashi, N, Bender, PC, Bowry, M, Bostan, M, Bucurescu, D, Bruce, AM, Cata-Danil, G, Cata-Danil, I, Chakrabarti, R, Deleanu, D, Detistov, P, Erduran, MN, Filipescu, D, Garg, U, Glodariu, T, Ghita, D, Ghugre, SS, Kusoglu, A, Marginean, R, Mihai, C, Nakhostin, M, Negret, A, Pascu, S, Triguero, CR, Sava, T, Sinha, AK, Stroe, L, Suliman, G and Zamfir, NV (2012) Half-life of the I-pi=4(-) intruder state in P-34: M2 transition strengths approaching the island of inversion PHYSICAL REVIEW C, 85 (6), ARTN 0.

Mason, PJR, Alharbi, T, Regan, PH, Marginean, N, Podolyak, Z, Alkhomashi, N, Bender, PC, Bowry, M, Bostan, M, Bucurescu, D, Bruce, AM, Cata-Danil, G, Cata-Danil, I, Chakrabarti, R, Deleanu, D, Detistov, P, Erduran, MN, Filipescu, D, Garg, U, Glodariu, T, Ghita, D, Ghugre, SS, Kusoglu, A, Marginean, R, Mihai, C, Nakhostin, M, Negret, A, Pascu, S, Triguero, CR, Sava, T, Simpson, EC, Sinha, AK, Stroe, L, Suliman, G, Zamfir, NV, Freeman, S, Andreyev, A, Bruce, A, Deacon, A, Jenkins, D, Joss, D, MacGregor, D, Regan, P, Simpson, J, Tungate, G, Wadsworth, B and Watts, D (2012) Half-life of the I-pi=4(-) Intruder State in P-34 Using LaBr3:Ce Fast Timing RUTHERFORD CENTENNIAL CONFERENCE ON NUCLEAR PHYSICS, 381, ARTN 0.

Alharbi, T, Mason, PJ, Regan, PH, Podolyák, Z, Mărginean, N, Nakhostin, M, Bowry, M, Bucurescu, D, Căta-Danil, G, Căta-Danil, I, Deleanu, D, Filipescu, D, Glodariu, T, Ghiţă, D, Mărginean, R, Mihai, C, Negret, A, Pascu, S, Sava, T, Stroe, L, Suliman, G, Zamfir, NV, Bruce, AM, Rodriguez Triguero, C, Bender, PC, Garg, U, Erduran, MN, Kusoglu, A, Bostan, M, Detistov, P, Alkhomashi, N, Sinha, AK, Chakrabarti, R and Ghugre, SS (2012) Gamma-ray fast-timing coincidence measurements from the (18)O+(18)O fusion-evaporation reaction using a mixed LaBr(3)-HPGe array Appl Radiat Isot, 70 (7). pp. 1337-1339.

Chaudhuri, SK, Goswami, K, Ghugre, SS and Das, D (2011) Evidence of formation of tetravacancies in uniformly oxygen irradiated n-type silicon Physica B: Condensed Matter, 406 (3). pp. 693-698.

Chaudhuri, SK, Goswami, K, Ghugre, SS and Das, D (2007) Isochronal annealing behaviour of defects induced by swift oxygen ions in high-resistivity p-type silicon Journal of Physics Condensed Matter, 19 (21).

Chaudhuri, SK, Rajesh, PV, Ghugre, SS and Das, D (2005) Oxygen enrichment of silicon wafer by ion implantation method and fabrication of surface barrier detectors Defect and Diffusion Forum, 245-24. pp. 23-28.

Chaudhuri, SK, Mukherjee, S, Rajesh, PV, Ghugre, SS and Das, D (2005) Positron annihilation studies of detector grade n-type silicon irradiated with 140 MeV oxygen (O6+) ions Physica B: Condensed Matter, 362 (1-4). pp. 249-254.

Vincent, SM, Regan, PH, Mohammadi, S, Blumenthal, D, Carpenter, M, Davids, CN, Gelletly, W, Ghugre, SS, Henderson, DJ, Janssens, RVF, Hjorth-Jensen, M, Kharraja, B, Lister, CJ, Pearson, CJ, Seweryniak, D, Schwartz, J, Simpson, J and Warner, DD (1999) Near yrast study of the fpg shell nuclei Ni-58, Cu-61, and Zn-61 PHYSICAL REVIEW C, 60 (6), ARTN 06430.

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