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Items where Author is "Georgakilas, A"

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Number of items: 12.

Article

Cengher, D, Aperathitis, E, Androulidaki, M, Deligeorgis, G, Kayambaki, M, Michelakis, K, Hatzopoulos, Z, Tzanetakis, P and Georgakilas, A (2001) Evaluation of performance capabilities of emitters and detectors based on a common MQW structure Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 80 (1-3). pp. 241-244.

Michelakis, C, Georgakilas, A, Androulidaki, M, Harteros, K, Deligeorgis, G, Calamiotou, M, Peiro, F, Bécourt, N, Cornet, A and Halkias, G (1999) Comparison of InGaAs/InAlAs electroabsorption modulator structures on (100) and (111) InP substrates Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 66 (1). pp. 181-184.

Arbiol, J, Peiró, F, Cornet, A, Morante, JR, Michelakis, K and Georgakilas, A (1999) Comparison of homogeneously grown and temperature-graded InAlAs buffers in the range 400-560 °C: Effects on surface morphology and layer stability Thin Solid Films, 357 (1). pp. 61-65.

Delimitis, A, Lioutas, CB, Michelakis, K and Georgakilas, A (1999) Interplay between planar defects and threading dislocations in GaAs-on-Si Materials Science Forum, 294-29. pp. 317-320.

Arbiol, J, Peiró, F, Cornet, A, Michelakis, K and Georgakilas, A (1999) Temperature-graded InAIAs buffers applied on InGaAs/lnAIAs/lnP high electron mobility transistor heterostructures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 17 (6). pp. 2540-2544.

Georgakilas, A, Michelakis, K, Kayambaki, M, Tsagaraki, K, Macarona, E, Hatzopoulos, Z, Vila, A, Becourt, N, Peiro, F, Cornet, A, Chrysanthakopoulos, N and Calamiotou, M (1999) Material properties of InAlAs layers grown by MBE on vicinal (1 1 1)B InP substrates Journal of Crystal Growth, 201. pp. 248-251.

Georgakilas, A, Michelakis, K, Halkias, G, Bécourt, N, Peiro, F and Cornet, A (1998) Potential use of the tendency of III-V alloys to separate for fabrication of low dimensionality structures Microelectronic Engineering, 41-42. pp. 583-586.

Bécourt, N, Ferrer, JC, Peiró, F, Cornet, A, Morante, JR, Gorostiza, P, Halkias, G, Michelakis, K and Georgakilas, A (1997) Defects analysis in strained InAlAs and InGaAs films grown on (111)B InP substrates Materials Science Forum, 258-26 (PART 2). pp. 1211-1216.

Bécourt, N, Peiró, F, Cornet, A, Morante, JR, Gorostiza, P, Halkias, G, Michelakis, K and Georgakilas, A (1997) Surface step bunching and crystal defects in InAlAs films grown by molecular beam epitaxy on (111)B InP substrates Applied Physics Letters, 71 (20). pp. 2961-2963.

Dimoulas, A, Leng, J, Giapis, KP, Georgakilas, A, Michelakis, C and Christou, A (1993) Interband transitions in InxGa1-xAs/In0.52Al0.48As single quantum wells studied by room-temperature modulation spectroscopy. Phys Rev B Condens Matter, 47 (12). pp. 7198-7207.

Zekentes, K, Georgakilas, A, Lagadas, M, Michelakis, K, Christou, A, Mercy, JM, Robert, JL and Konczewicz, L (1992) Electrical transport study of pseudomorphic heterostructures InGaAs-InAlAs on Si and InP substrates Sensors and Actuators: A. Physical, 33 (1-2). pp. 67-70.

Dimoulas, A, Georgakilas, A, Halkias, G, Zekentes, C, Michelakis, C and Christou, A (1991) Confined states in InGaAs/InAlAs single quantum wells studied by room temperature phototransmitance and electrotransmitance at high electric fields Institute of Physics Conference Series, 120. pp. 263-266.

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