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Items where Author is "Gennaro, S"

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Article

Giubertoni, D, Demenev, E, Jestin, Y, Meirer, F, Gennaro, S, Iacob, E, Pepponi, G, Pucker, G, Bersani, M, Gupta, S, Saraswat, KC, Gwilliam, RM, Jeynes, C and Colaux, JL (2012) Solid phase epitaxial re-growth of Sn ion implanted germanium thin films AIP Conference Proceedings, 1496. pp. 103-106.

Giubertoni, D, Pepponi, G, Sahiner, MA, Kelty, SP, Gennaro, S, Bersani, M, Kah, M, Kirkby, KJ, Doherty, R, Foad, MA, Meirer, F, Streli, C, Woicik, JC and Pianetta, P (2010) Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 28 (1). C1B1-C1B5.

Giubertoni, D, Pepponi, G, Gennaro, S, Bersani, M, Sahiner, MA, Kelty, SP, Doherty, R, Foad, MA, Kah, M, Kirkby, KJ, Woicik, JC and Pianetta, P (2008) Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon JOURNAL OF APPLIED PHYSICS, 104 (10), ARTN 10371.

Sharp, JA, Smith, AJ, Webb, RP, Kirkby, KJ, Cowern, NEB, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA, Fazzini, PF and Cristiano, F (2008) Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing APPL PHYS LETT, 92 (8), 082109.

Sharp, JA, Smith, AJ, Webb, RP, Kirkby, KJ, Cowern, NEB, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA, Fazzini, PF and Cristiano, F (2008) Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing APPL PHYS LETT, 92 (8), 082109.

Hamilton, JJ, Kirkby, KJ, Cowern, NEB, Collart, EJH, Bersani, M, Giubertoni, D, Gennaro, S and Parisini, A (2007) Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink APPLIED PHYSICS LETTERS, 91 (9), ARTN 0.

Hamilton, JJ, Collart, EJH, Bersani, M, Giubertoni, D, Gennaro, S, Bennett, NS, Cowern, NEB and Kirkby, KJ (2006) Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in silicon-on-insulator AIP Conference Proceedings, 866. pp. 73-75.

Gennaro, S, Giubertoni, D, Bersani, M, Foggiato, J, Yoo, WS, Gwilliam, R and Anderle, M (2006) The effect of flash annealing on the electrical properties of indium/carbon Co-implants in silicon AIP Conference Proceedings, 866. pp. 113-116.

Sharp, JA, Cowern, NEB, Webb, RP, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA and Kirkby, KJ (2006) Deactivation of B and BF2 profiles after non-melt laser annealing Materials Research Society Symposium Proceedings, 912. pp. 159-163.

Sharp, JA, Cowern, NEB, Webb, RP, Kirkby, KJ, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA, Cristiano, F and Fazzini, PF (2006) Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans APPLIED PHYSICS LETTERS, 89 (19), ARTN 1.

Smith, AJ, Cowern, NEB, Gwilliam, R, Sealy, BJ, Colombeau, B, Collart, EJH, Gennaro, S, Giubertoni, D, Bersani, M and Barozzi, M (2006) Vacancy-engineering implants for high boron activation in silicon on insulator APPLIED PHYSICS LETTERS, 88 (8), ARTN 0.

Smith, AJ, Cowern, NEB, Colombeau, B, Gwilliam, R, Sealy, BJ, Collart, EJH, Gennaro, S, Giubertoni, D, Bersani, M and Barozzi, M (2006) Junction stability of B doped layers in SOI formed with optimized vacancy engineering implants Ion Implantation Technology, 866. pp. 84-87.

Conference or Workshop Item

Sharp, JA, Cowern, NEB, Webb, RP, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA and Kirkby, KJ (2006) Deactivation of low energy boron implants into pre-amorphised Si after non-melt laser annealing with multiple scans In: 16th International Conference on Ion Implantation Technology, 2006-06-11 - 2006-06-16, Marseille, FRANCE.

Sharp, JA, Cowern, NEB, Webb, RP, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA and Kirkby, KJ (2006) Deactivation of ultra shallow B and BF2 profiles after non-melt laser annealing In: Symposium on Sub Second Rapid Thermal Processing for Device Fabrication held at the 2006 MRS Spring Meeting, 2006-04-18 - 2006-04-19, San Francisco, CA.

Gennaro, S, Giubertoni, D, Bersani, M, Foggiato, J, Yoo, WS and Gwilliam, R (2006) Nonconventional flash annealing on shallow indium implants in silicon In: 8th International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors, 2005-06-05 - 2005-06-08, Daytona Beach, FL.

Hamilton, JJ, Collart, EJH, Bersani, M, Giubertoni, D, Gennaro, S, Bennett, NS, Cowern, NEB and Kirkby, KJ (2006) Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in Silicon-on-insulator In: 16th International Conference on Ion Implantation Technology, 2006-06-11 - 2006-06-16, Marseille, FRANCE.

Gennaro, S, Sealy, BJ, Jeynes, C, Gwilliam, R, Collart, EJH and Licciardello, A (2003) Effects of carbon content and annealing conditions on the electrical activation of indium implanted silicon In: 14th International Conference on Ion Implantation Technology, 2002-09-18 - 2002-09-27, TAOS, NM.

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