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Items where Author is "Frauenheim, T"

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Article

Blumenau, AT, Fall, CJ, Elsner, J, Jones, R, Heggie, MI and Frauenheim, T (2003) A theoretical investigation of dislocations in cubic and hexagonal gallium nitride Physica Status Solidi C: Conferences (6 SPEC). pp. 1684-1709.

Jones, R, Fall, CJ, Gutiérrez-Sosa, A, Bangert, U, Heggie, MI, Blumenau, AT, Frauenheim, T and Briddon, PR (2002) Calculated and experimental low-loss electron energy loss spectra of dislocations in diamond and GaN Journal of Physics Condensed Matter, 14 (48). pp. 12793-12800.

Blumenau, AT, Fall, CJ, Jones, R, Heggie, MI, Briddon, PR, Frauenheim, T and Öberg, S (2002) Straight and kinked 90° partial dislocations in diamond and 3C-SiC Journal of Physics Condensed Matter, 14 (48). pp. 12741-12747.

Fall, CJ, Jones, R, Briddon, PR, Blumenau, AT, Frauenheim, T and Heggie, MI (2002) Influence of dislocations on electron energy-loss spectra in gallium nitride Physical Review B - Condensed Matter and Materials Physics, 65 (24). pp. 2453041-2453048.

Blumenau, AT, Heggie, MI, Fall, CJ, Jones, R and Frauenheim, T (2002) Dislocations in diamond: Core structures and energies Physical Review B - Condensed Matter and Materials Physics, 65 (20). pp. 2052051-2052058.

Fall, CJ, Jones, R, Briddon, PR, Blumenau, AT, Frauenheim, T and Heggie, MI (2002) Theory of electron energy loss spectroscopy and its application to threading edge dislocations in GaN Materials Research Society Symposium - Proceedings, 693. pp. 585-595.

Blumenau, AT, Elsner, J, Jones, R, Heggie, MI, Öberg, S, Frauenheim, T and Briddon, PR (2000) Dislocations in hexagonal and cubic GaN Journal of Physics Condensed Matter, 12 (49). pp. 10223-10233.

Elsner, J, Blumenau, AT, Frauenheim, T, Jones, R and Heggie, MI (2000) Structural and electronic properties of line defects in GaN MRS Internet Journal of Nitride Semiconductor Research, 5 (SUPPL.).

Haugk, M, Elsner, J, Frauenheim, T, Staab, TEM, Latham, CD, Jones, R, Leipner, HS, Heine, T, Seifert, G and Sternberg, M (2000) Structures, energetics and electronic properties of complex III–V semiconductor systems Physica Status Solidi B: Basic Solid State Physics, 217 (1). pp. 473-511.

Latham, CD, Jones, R, Haugk, M, Frauenheim, T and Briddon, PR (1999) Mechanism for dicarbon defect formation in AlAs and GaAs Physica B: Condensed Matter, 273–27. pp. 784-787.

Latham, CD, Haugk, M, Jones, R, Frauenheim, T and Briddon, PR (1999) Density-functional calculations of carbon diffusion in GaAs Physical Review B: Condensed Matter and Materials Physics, 60 (22). pp. 15117-15122.

Elsner, J, Frauenheim, T, Haugk, M, Gutierrez, R, Jones, R and Heggie, MI (1999) Extended defects in GaN: A theoretical study MRS Internet Journal of Nitride Semiconductor Research, 4 (SUPPL.).

Jones, R, Elsner, J, Haugk, M, Gutierrez, R, Frauenheim, TH, Heggie, MI, Öberg, S and Briddon, PR (1999) Interaction of Oxygen with Threading Dislocations in GaN Physica Status Solidi (A) Applied Research, 171 (1). pp. 167-173.

Gutiérrez, R, Haugk, M, Frauenheim, T, Elsner, J, Jones, R, Heggie, MI, Öberg, S and Briddon, PR (1999) The formation of nanopipes caused by donor impurities in GaN: A theoretical study for the case of oxygen Philosophical Magazine Letters, 79 (2-3). pp. 147-152.

Elsner, J, Kaukonen, M, Heggie, MI, Haugk, M, Frauenheim, T and Jones, R (1998) Domain boundaries on {112̄0} planes in GaN: A theoretical study Physical Review B - Condensed Matter and Materials Physics, 58 (23). pp. 15347-15350.

Elsner, J, Jones, R, Heggie, MI, Sitch, PK, Haugk, M, Frauenheim, T, Öberg, S and Briddon, PR (1998) Deep acceptors trapped at threading-edge dislocations in GaN Physical Review B - Condensed Matter and Materials Physics, 58 (19). pp. 12571-12574.

Elsner, J, Jones, R, Haugk, M, Gutierrez, R, Frauenheim, T, Heggie, MI, Öberg, S and Briddon, PR (1998) Effect of oxygen on the growth of (101̄0) GaN surfaces: The formation of nanopipes Applied Physics Letters, 73 (24). pp. 3530-3532.

Jungnickel, G, Sitch, PK, Frauenheim, T, Eggen, BR, Heggie, MI, Latham, CD and Cousins, CSG (1998) Nitrogen doping in purely sp2 bonded forms of carbon Physical Review B: Condensed Matter and Materials Physics, 57 (2). R661-R665.

Elsner, J, Jones, R, Sitch, PK, Frauenheim, T, Heggie, MI, Öberg, S and Briddon, PR (1997) Structural and electrical properties of threading dislocations in GaN Materials Science Forum, 258-26 (PART 2). pp. 1203-1210.

Elsner, J, Jones, R, Sitch, PK, Porezag, VD, Elstner, M, Frauenheim, T, Heggie, MI, Öberg, S and Briddon, PR (1997) Theory of threading edge and screw dislocations in GaN Physical Review Letters, 79 (19). pp. 3672-3675.

Jungnickel, G, Porezag, D, Frauenheim, T, Heggie, MI, Lambrecht, WRL, Segall, B and Angus, JC (1996) Graphitization effects on diamond surfaces and the diamond/graphite interface Physica Status Solidi (A) Applied Research, 154 (1). pp. 109-125.

Jungnickel, G, Latham, CD, Heggie, MI and Frauenheim, T (1996) On the graphitization of diamond surfaces: the importance of twins Diamond and Related Materials, 5 (1). pp. 102-112.

Book Section

Jungnickel, G, Sitch, PK, Frauenheim, T, Cousins, CR, Latham, CD, Eggen, BR and Heggie, MI (2000) Effective doping in novel sp² bonded carbon allotropes In: Handbook of Ceramic Hard Materials. WILEY-VCH Verlag GmbH, Weinheim, Germany, pp. 271-285. ISBN 9783527299720

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