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Items where Author is "Foad, M"

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Article

Giubertoni, D, Pepponi, G, Sahiner, MA, Kelty, SP, Gennaro, S, Bersani, M, Kah, M, Kirkby, KJ, Doherty, R, Foad, MA, Meirer, F, Streli, C, Woicik, JC and Pianetta, P (2010) Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 28 (1). C1B1-C1B5.

Giubertoni, D, Pepponi, G, Gennaro, S, Bersani, M, Sahiner, MA, Kelty, SP, Doherty, R, Foad, MA, Kah, M, Kirkby, KJ, Woicik, JC and Pianetta, P (2008) Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon JOURNAL OF APPLIED PHYSICS, 104 (10), ARTN 10371.

Sharp, JA, Smith, AJ, Webb, RP, Kirkby, KJ, Cowern, NEB, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA, Fazzini, PF and Cristiano, F (2008) Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing APPL PHYS LETT, 92 (8), 082109.

Sharp, JA, Smith, AJ, Webb, RP, Kirkby, KJ, Cowern, NEB, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA, Fazzini, PF and Cristiano, F (2008) Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing APPL PHYS LETT, 92 (8), 082109.

Sharp, JA, Cowern, NEB, Webb, RP, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA and Kirkby, KJ (2006) Deactivation of B and BF2 profiles after non-melt laser annealing Materials Research Society Symposium Proceedings, 912. pp. 159-163.

Sharp, JA, Cowern, NEB, Webb, RP, Kirkby, KJ, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA, Cristiano, F and Fazzini, PF (2006) Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans APPLIED PHYSICS LETTERS, 89 (19), ARTN 1.

Foad, MA, Webb, R, Smith, R, Matsuo, J, Al-Bayati, A, T-Sheng-Wang, and Cullis, T (2000) Shallow junction formation by decaborane molecular ion implantation JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 18 (1). pp. 445-449.

Smith, R, Shaw, M, Webb, RP and Foad, MA (1998) Ultrashallow junctions in Si using decaborane? A molecular dynamics simulation study JOURNAL OF APPLIED PHYSICS, 83 (6). pp. 3148-3152.

Current, M. I., Lopes, D., Foad, M.A., England, Jonathan, Jones, C. and Su, D. (1998) 200 eV–10 keV boron implantation and rapid thermal annealing: Secondary ion mass spectroscopy and transmission electron microscopy study Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 16 (1). pp. 327-333.

Webb, RP, Foad, MA, Gwilliam, RM, Knights, AP and Thomas, G (1997) Anomalous diffusion of ultra low energy boron implants in silicon DEFECTS AND DIFFUSION IN SILICON PROCESSING, 469. pp. 59-63.

England, Jonathan, Cook, C.E.A., Armour, D.G. and Foad, M.A. (1995) Charged particle energy spectrometers and their applications in fundamental studies of wafer charging and ion beam tuning phenomena Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 96 (1-2). pp. 39-42.

Conference or Workshop Item

Sharp, JA, Cowern, NEB, Webb, RP, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA and Kirkby, KJ (2006) Deactivation of low energy boron implants into pre-amorphised Si after non-melt laser annealing with multiple scans In: 16th International Conference on Ion Implantation Technology, 2006-06-11 - 2006-06-16, Marseille, FRANCE.

Sharp, JA, Cowern, NEB, Webb, RP, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA and Kirkby, KJ (2006) Deactivation of ultra shallow B and BF2 profiles after non-melt laser annealing In: Symposium on Sub Second Rapid Thermal Processing for Device Fabrication held at the 2006 MRS Spring Meeting, 2006-04-18 - 2006-04-19, San Francisco, CA.

Foad, M.A., England, Jonathan, Moffatt, S. and Armour, D.G. (1997) Analysis of sub-1keV Implants in Silicon using SIMS, SRP, MEISS and DLTS: The xRLEAP Low Energy, High Current Implanter Evaluated In: 11th International Conference on Ion Implantation Technology, 16-21 Jun 1996, Austin, Texas, USA.

England, Jonathan, Joyce, L., Burgess, C., Moffatt, S., Foad, M., Armour, D. and Current, M. (1997) The Applied Materials xRLEAP ion implanter for ultra shallow junction formation In: 11th International Conference on Ion Implantation Technology, 16-21 Jun 1996, Austin, Texas, USA.

Hatzopoulos, N., Suder, S., van den Berg, J.A., Donnelly, S.E., Cook, C.E.A., Armour, D.G., Panknin, D., Fukarek, W., Lucassen, M., Frey, L., Foad, M.A., England, Jonathan, Moffatt, S., Bailey, P., Noakes, C.T. and Ohno, H. (1997) Range and damage distributions in ultra-low energy boron implantation into silicon In: 11th International Conference on Ion Implantation Technology, 16-21 Jun 1996, Austin, Texas, USA.

England, Jonathan, Cook, C., Armour, D. and Foad, M. (1995) Charged particle energy spectrometers and their applications in fundamental studies of wafer charging and ion beam tuning phenomena In: Ion Implantation Technology 94 (IIT 94), 13-17 Jun 1994, Catania, Italy.

Foad, M., Armour, D., Kilmes, Z., Hilton, B., Van den Berg, J., Cook, C., Chew, A., Sykes, D., England, Jonathan, Devaney, A., Ito, H., Bryan, N., Plumb, F., Kindersley, P. and Moffatt, S. (1995) Dedicated Test Facility for Ion Beam Quality Evaluation and Spectroscopies In: Ion Implantation Technology 94 (IIT 94), 13-17 Jun 1994, Catania, Italy.

Foad, M., Armour, D. and England, Jonathan (1995) The Use of KOBRA for Implanter Beamline Design and Optimisation In: Ion Implantation Technology 94 (IIT 94), 13-17 Jun 1994, Catania, Italy.

Patent

England, et al. (1999) Ion implanter with post mass selection deceleration 5,969,366.

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