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Items where Author is "Fehse, R"

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Article

Fehse, R, O'Reilly, EP, Sweeney, SJ, Adams, AR, McConville, D, Riechert, H and Geelhaar, L (2005) Investigation of carrier recombination processes and transport properties in GaInAsN/GaAs quantum wells AIP Conference Proceedings, 772. pp. 985-986.

Knowles, G, Fehse, R, Tomic, S, Sweeney, Stephen, Sale, TE, Adams, Alfred, O'Reilly, P, Steinle, G and Riechert, H (2003) Investigation of 1.3-mu m GaInNAs vertical-cavity surface-emitting lasers (VCSELs) using temperature, high-pressure, and modelling techniques IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 9 (5). pp. 1202-1208.

Tomic, S, O'Reilly, EP, Fehse, R, Sweeney, Stephen, Adams, Alfred, Andreev, Aleksey, Choulis, SA, Hosea, Thomas and Riechert, H (2003) Theoretical and experimental analysis of 1.3-mu m InGaAsN/GaAs lasers IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 9 (5). pp. 1228-1238.

O'Reilly, EP, Fahy, S, Lindsay, A, Tomić, S, Fehse, R, Adams, AR, Sweeney, SJ, Andreev, AD, Klar, PJ, Grüning, H and Riechert, H (2003) Novel electronic and optoelectronic properties of GaInNAs and related alloys OSA Trends in Optics and Photonics Series, 88. pp. 523-525.

Fehse, R, Tomic, S, Adams, AR, Sweeney, SJ, O'Reilly, EP, Andreev, A and Riechert, H (2002) A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-mu m GaInNAs-based quantum-well lasers IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 8 (4). pp. 801-810.

Jin, SR, Fehse, R, Sweeney, SJ, Knowles, G, Adams, AR, O'Reilly, EP, Reichert, H, Illek, S, Egorov, AY, Thijs, PJA, Uchida, T and Fujii, T (2002) Modal refractive index of 1.3 mu m InGaAsP, AlGaInAs and GaInNAs semiconductor lasers under high hydrostatic pressure ELECTRONICS LETTERS, 38 (7). pp. 325-327.

Tomić, S, Fehse, R, Choulis, SA, O'Reilly, EP, Adams, AR, Sweeney, SJ, Andreev, AD, Hosea, TJC and Riechert, H (2002) Experimental and theoretical analysis of the recombination processes in GaInNAs 1.3 μm Lasers Conference Digest - IEEE International Semiconductor Laser Conference. pp. 41-42.

Sweeney, SJ, Jin, SR, Fehse, R, Adams, AR, Higashi, T, Riechert, H and Thijs, PJA (2002) A comparison of the thermal stability of InGaAsP, AlGaInAs and GaInNAs quantum-well lasers for 1.3 μm operation Conference Digest - IEEE International Semiconductor Laser Conference. pp. 43-44.

Knowles, G, Fehse, R, Tomić, S, Sweeney, SJ, Sale, TE, Adams, AR, O'Reilly, EP, Steinle, G and Riechert, H (2002) The temperature and pressure dependence of 1.3 μm GaInNAs vertical-cavity surface emitting lasers (VCSELs) Conference Digest - IEEE International Semiconductor Laser Conference. pp. 139-140.

Fehse, R, Jin, S, Sweeney, SJ, Adams, AR, O'Reilly, EP, Riechert, H, Illek, S and Egorov, AY (2001) Evidence for large monomolecular recombination contribution to threshold current in 1.3 mu m GaInNAs semiconductor lasers ELECTRONICS LETTERS, 37 (25). pp. 1518-1520.

Fehse, R, Sweeney, SJ, Adams, AR, O'Reilly, EP, Egorov, AY, Riechert, H and Illek, S (2001) Insights into carrier recombination processes in 1.3 mu m GaInNAs-based semiconductor lasers attained using high pressure ELECTRONICS LETTERS, 37 (2). pp. 92-93.

Conference or Workshop Item

Fehse, R, Sweeney, SJ, Adams, AR, McConville, D, Riechert, H and Geelhaar, L (2004) Influence of growth temperature on carrier recombination in GaInNAs-based lasers In: Symposium on Dilute Nitride and Related Mismatched Semiconductor Alloys held at the 2004 Spring Meeting of the EMRS, 2004-05-24 - 2004-05-28, Strasbourg, FRANCE.

Fehse, R, Sweeney, Stephen, Adams, Alfred, McConville, D, Riechert, H and Geelhaar, L (2004) Influence of growth temperature on defect density in 1.3 mu m GaInNAs-based lasers In: 19th IEEE International Semiconductor Laser Conference, 2004-09-21 - 2004-09-25, Matsue, JAPAN.

Fehse, R, Marko, I and Adams, AR (2003) Long wavelength lasers on GaAs substrates In: 6th International Conference on Optoelectronics, Fibre Optics and Photonics, 2002-12 - ?, MUMBAI, INDIA.

Fehse, R, Adams, AR, Sweeney, SJ, Tomic, S, Reichart, H and Ramakrishnan, A (2003) Carrier recombination processes in MOVPE and MBE grown 1.3 mu m GaInNAs edge emitting lasers In: Spring Meeting of the European-Materials-Research-Society (E-MRS), 2002-06-18 - 2002-06-21, STRASBOURG, FRANCE.

Knowles, G, Tomic, S, Jin, S, Fehse, R, Sweeney, SJ, Sale, TE and Adams, AR (2003) Gain-cavity alignment profiling of 1.3 mu m emitting GaInNAs vertical cavity surface emitting lasers (VCSELs) using high pressure techniques In: 10th International Conference on High Pressures in Semiconductor Physics (HPSP-X), 2002-08-05 - 2002-08-08, UNIV SURREY, GUILDFORD, ENGLAND.

Sweeney, Stephen, Fehse, R, Adams, Alfred and Riechert, H (2003) Intrinsic temperature sensitivities of 1.3 mu m GaInNAs/GaAs, InGaAsP/InP and AlGaInAs/InP-based semiconductor lasers In: 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003-10-27 - 2003-10-30, TUCSON, AZ.

Adams, AR, Fehse, R, Tomic, S, O'Reilly, EP, Andreev, A, Knowles, G, Sale, TE, Sweeney, SJ, Steinle, G, Ramakrishnan, A and Riechert, H (2002) Characterisation of 1.3pm wavelength GaInNAs/GaAs edge-emitting and vertical-cavity surface-emitting lasers using low-temperature and high-pressure In: Conference on Asia-Pacific Optical and Wireless Communication (APOC 2002), 2002-10-15 - 2002-10-18, SHANGHAI, PEOPLES R CHINA.

Fehse, R, Jin, S, Sweeney, SJ, Adams, AR, O'Reilly, EP, Illek, S, Egorov, AY and Riechert, H (2001) The temperature dependence of the recombination processes in 1.3 mu m GaInNAs-based edge emitting lasers In: 14th Annual Meeting of the IEEE Lasers-and-Electro-Optics-Society, 2001-11-11 - 2001-11-15, SAN DIEGO, CA.

Thesis

Fehse, Robin (2003) Recombination Processes in GaInAs/GaAs Semiconductor Quantum-Well Lasers Doctoral thesis, University of Surrey.

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