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Items where Author is "Fedorenko, Y"

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Number of items: 12.

Article

Fedorenko, YG, Hughes, MA, Colaux, JL, Jeynes, C, Gwilliam, RM, Homewood, K, Gholipour, B, Yao, J, Hewak, DW, Lee, T-H, Elliott, SR and Curry, RJ (2014) Electrical properties of Bi-implanted amorphous chalcogenide films

Hughes, MA, Fedorenko, Y, Gwilliam, RM, Homewood, KP, Curry, RJ, Hinder, S, Gholipour, B, Hewak, DW, Lee, T-H and Elliott, SR (2014) Ion-implantation-enhanced chalcogenide-glass resistive-switching devices Applied Physics Letters, 105 (8).

Hughes, MA, Fedorenko, Y, Gholipour, B, Yao, J, Lee, TH, Gwilliam, RM, Homewood, KP, Hinder, S, Hewak, DW, Elliott, SR and Curry, RJ (2014) n-type chalcogenides by ion implantation. Nat Commun, 5.

Yashchenok, AM, Gorin, DA, Badylevich, M, Serdobintsev, AA, Bedard, M, Fedorenko, YG, Khomutov, GB, Grigoriev, DO and Möhwald, H (2010) Impact of magnetite nanoparticle incorporation on optical and electrical properties of nanocomposite LbL assemblies. Phys Chem Chem Phys, 12 (35). pp. 10469-10475.

Dmitrievskiy, AA, Efremova, NY, Vihlyaeva, EM, Korenkov, VV, Shuklinov, AV, Badylevich, MV and Fedorenko, YG (2010) Mechanical properties of AIN/Si structures under conditions of low-flux beta irradiations Bulletin of the Russian Academy of Sciences: Physics, 74 (2). pp. 209-212.

Badylevich, M, Shamuilia, S, Afanas'Ev, VV, Stesmans, A, Fedorenko, YG and Zhao, C (2008) Electronic structure of the interface of aluminum nitride with Si(100) Journal of Applied Physics, 104 (9).

Swerts, J, Fedorenko, Y, Maes, JW, Tois, E, Delabie, A, Ragnarsson, LA, Yu, HY, Nyns, L, Adelmann, C and Van Elshocht, S (2007) ALD La-based oxides for vt-tuning in high-k/metal gate stacks ECS Transactions, 11 (7). pp. 201-211.

Delabie, A, Nyns, L, Bellenger, F, Caymax, M, Conard, T, Franquet, A, Houssa, M, Lin, D, Meuris, M, Ragnarsson, LA, Sioncke, S, Swerts, J, Fedorenko, Y, Maes, JW, Van Elshocht, S and De Gendt, S (2007) Atomic Layer Deposition of hafnium based gate dielectric layers for CMOS applications ECS Transactions, 11 (7). pp. 227-241.

Delabie, A, Pourtois, G, Caymax, M, De Gendt, S, Ragnarsson, LA, Heyns, M, Fedorenko, Y, Swerts, J and Maes, JW (2007) Atomic layer deposition of hafnium silicate gate dielectric layers Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 25 (4). pp. 1302-1308.

Fedorenko, Y, Swerts, J, Maes, JW, Tois, E, Haukka, S, Wang, CG, Wilk, G, Delabie, A, Deweerd, W and De Gendt, S (2007) Atomic layer deposition of hafnium silicate from HfCl4, SiCl4, and H2O Electrochemical and Solid-State Letters, 10 (5). pp. 149-152.

Swerts, J, Deweerd, W, Wang, CG, Fedorenko, Y, Delabie, A, Shero, E, Zhao, C, Maes, JW, De Gendt, S and Wilk, G (2006) Highly scalable ALD-deposited hafnium silicate gate stacks for low standby power applications Materials Research Society Symposium Proceedings, 917. pp. 155-160.

Dataset

Curry, RJ and Fedorenko, YG Electrical Properties of Bi-implanted amorphous chalcogenide films [Dataset]

This list was generated on Sun Sep 24 01:40:06 2017 UTC.

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