University of Surrey

Test tubes in the lab Research in the ATI Dance Research

Items where Author is "England, J"

Up a level
Export as [feed] RSS 1.0 [feed] RSS 2.0
Group by: Item Type | No Grouping
Number of items: 67.

Article

England, JG and Moller, W (2015) Industrial Challenges in Ion Beam Processing and Metrology in the 3D Era Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 365 (Part A). pp. 105-109.

Elliman, R, Saleh, M, Kim, T-H, Venkatachalam, D, Belay, K, Ruffell, S, Kurunczi, P and England, JG (2013) Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 307. pp. 98-101.

Ruffell, S, Kurunczi, P, England, JG, Erokhin, Y, Hautala, J and Elliman, R (2013) Formation and characterization of Ta2O5/TaOx films formed by O ion implantation Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 307. pp. 491-494.

England, J, Phaneuf, MW, Laquerre, A, Smith, A and Gwilliam, R (2011) Ion beam assisted crystallization of amorphous silicon layers using high current density Gallium beams Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms.

Current, M. I., Lopes, D., Foad, M.A., England, Jonathan, Jones, C. and Su, D. (1998) 200 eV–10 keV boron implantation and rapid thermal annealing: Secondary ion mass spectroscopy and transmission electron microscopy study Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 16 (1). pp. 327-333.

England, Jonathan, Cook, C.E.A., Armour, D.G. and Foad, M.A. (1995) Charged particle energy spectrometers and their applications in fundamental studies of wafer charging and ion beam tuning phenomena Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 96 (1-2). pp. 39-42.

Wauk, Michael T., Castle, Matt, England, Jonathan and Current, Michael (1994) Controlling heavy metal and dopant contamination during ion implantation Microcontamination, 12 (10). pp. 29-37.

England, Jonathan, Current, Michael I., Kamata, T., Malone, Phil and Ito, Hiro (1994) Charge neutralisation during high-current ion implantation Solid State Technology. pp. 115-118.

England, Jonathan, Zindler, A., Reisberg, L.C., Rubenstone, J.L., Salters, V., Marcantonio, F., Bourdon, B., Brueckner, H., Turner, P.J., Weaver, S. and Read, P. (1992) The Lamont—Doherty Geological Observatory Isolab 54 isotope ratio mass spectrometer International Journal of Mass Spectrometry and Ion Processes, 121 (3). pp. 201-240.

England, Jonathan, Reisberg, Laurie, Marcantonio, Franco and Zindler, Alan (1992) Comparison of one- and two-color ionization schemes for the analysis for osmium and rhenium isotopic ratios by sputter-induced resonance ionization mass spectrometry Analytical Chemistry, 64 (21). pp. 2623-2627.

England, Jonathan, Grant, I.S., Griffith, J.A.R., Evans, D.E., Eastham, D.A., Newton, G.W.A. and Walker, P.M. (1990) Isotope shifts and hyperfine splitting in144-154Sm I Journal of Physics G: Nuclear and Particle Physics, 16 (1). pp. 105-123.

Eastham, D A, England, Jonathan, Evans, D E, Fawcett, M J, Grant, I S, Griffith, J A R, Newton, G W A and Walker, P M (1984) Optical isotope shift and hyperfine structure of153Sm Journal of Physics G: Nuclear Physics, 10 (12). L271-L274.

Eastham, D. A., Walker, P. M., Griffith, J. A. R., Evans, D. E., England, Jonathan and Grant, I. S. (1984) Optical isotope shifts of 146Sm and 151Sm Zeitschrift fur Physik A Atoms and Nuclei, 318 (2). pp. 243-244.

Monograph

England, Jonathan (1988) Ultra Sensitive Isotope Ratio Mass Spectrometry Other.

Conference or Workshop Item

England, Jonathan, Möller, W, van den Berg, JA, Rossall, A, Min, WJ and Kim, J (2017) Combining Dynamic Modelling Codes with Medium Energy Ion Scattering Measurements to Characterise Plasma Doping In: 20th International Conference on Ion Beam modification of materials, 30 Oct - 4 Nov 2016, Wellington, New Zealand.

England, Jonathan, van den Berg, J.A., Rossall, A.K., Alencar, I., Marmit, G.G., Trombini, H. and Grande, P.L. (2016) Combining Medium Energy Ion Scattering measurements with TRIDYN dynamic modelling to characterise a plasma doping process In: 8th International Workshop on High-Resolution Depth Profiling 2016, 7-11 Aug 2016, Western University, London, Ontario, Canada.

England, JG and Spitzer, MB (2010) Ion beam surface modification of solar module glass for reduced reflectance In: 35th IEEE Photovoltaic Specialists Conference (PVSC), 2010, 2010-06-20 - 2010-06-25, Honolulu, Hawaii, USA.

England, Jonathan, Kontos, Alexander, Renau, Anthony, Gwilliam, Russell, Smith, Andrew, Knights, Andrew, Jain, Amitabh, Seebauer, Edmund G., Felch, Susan B., Jain, Amitabh and Kondratenko, Yevgeniy V. (2008) The Effect of Amorphization Conditions on the Measured Activation of Source Drain Extension Implants In: Ion Implantation Technology 2008: 17th International Conference on Ion Implantation Technology, 8–13 Jun 2008, Monterey, USA.

Hoffmann, T., Storms, G., Ercken, M., Maenhoudt, M., Pollentier, I., Ronse, K., Felten, F., Wong, E. and England, Jonathan (2001) Impact of 193nm Resist Shrinkage on CD-SEM Metrology In: Interface 2001 Conference, 2001.

Behringer, Uwe F. W., James, A., Felten, F., Polli, M., England, Jonathan, Marschner, Thomas and Vandenberghe, Geert (2000) Reticle imaging and metrology using a CD-SEM at IMEC In: 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 15 Nov 1999, Munich, Germany.

Foad, M.A., England, Jonathan, Moffatt, S. and Armour, D.G. (1997) Analysis of sub-1keV Implants in Silicon using SIMS, SRP, MEISS and DLTS: The xRLEAP Low Energy, High Current Implanter Evaluated In: 11th International Conference on Ion Implantation Technology, 16-21 Jun 1996, Austin, Texas, USA.

England, Jonathan, Joyce, L., Burgess, C., Moffatt, S., Foad, M., Armour, D. and Current, M. (1997) The Applied Materials xRLEAP ion implanter for ultra shallow junction formation In: 11th International Conference on Ion Implantation Technology, 16-21 Jun 1996, Austin, Texas, USA.

England, Jonathan, McLaren, M., Mitchell, R. and Uritsky, Y. (1997) Elemental analysis of ion implantation added particles In: 11th International Conference on Ion Implantation Technology, 16-21 Jun 1996, Austin, Texas, USA.

Lowrie, C., England, Jonathan, Hunter, A., Burgin, D. and Harrison, B. (1997) Factors affecting the design of the Applied Materials xR80 implant family In: 11th International Conference on Ion Implantation Technology, 16-21 Jun 1996, Austin, Texas, USA.

Hatzopoulos, N., Suder, S., van den Berg, J.A., Donnelly, S.E., Cook, C.E.A., Armour, D.G., Panknin, D., Fukarek, W., Lucassen, M., Frey, L., Foad, M.A., England, Jonathan, Moffatt, S., Bailey, P., Noakes, C.T. and Ohno, H. (1997) Range and damage distributions in ultra-low energy boron implantation into silicon In: 11th International Conference on Ion Implantation Technology, 16-21 Jun 1996, Austin, Texas, USA.

England, Jonathan, Cook, C., Armour, D. and Foad, M. (1995) Charged particle energy spectrometers and their applications in fundamental studies of wafer charging and ion beam tuning phenomena In: Ion Implantation Technology 94 (IIT 94), 13-17 Jun 1994, Catania, Italy.

Foad, M., Armour, D., Kilmes, Z., Hilton, B., Van den Berg, J., Cook, C., Chew, A., Sykes, D., England, Jonathan, Devaney, A., Ito, H., Bryan, N., Plumb, F., Kindersley, P. and Moffatt, S. (1995) Dedicated Test Facility for Ion Beam Quality Evaluation and Spectroscopies In: Ion Implantation Technology 94 (IIT 94), 13-17 Jun 1994, Catania, Italy.

Malone, P., Shull, W., England, Jonathan and Fotheringham, I. (1995) A Demonstration using the THOR Monitor that Beam Quality Can Affect Device Yield In: Ion Implantation Technology 94 (IIT 94), 13-17 Jun 1994, Catania, Italy.

Szajnowski, W., England, Jonathan, Stephens, K., Fotheringham, I., Scargill, D. and Rimini, E. (1995) Measuring a Two Dimensional Profile of an Ion Beam In: Ion Implantation Technology 94 (IIT 94), 13-17 Jun 1994, Catania, Italy.

Ito, H., Kamata, T., England, Jonathan, Fotheringham, I., Plumb, F. and Current, M. (1995) The Precision Implant 9500 Plasma Flood System In: Ion Implantation Technology 94 (IIT 94), 13-17 Jun 1994, Catania, Italy.

Horvath, J., Little, N., Rigsby, D., Anthony, M. and England, Jonathan (1995) Reduction of Boron Cross Contamination During Arsenic Implantation in the Applied Materials Precision Implant 9500 In: Ion Implantation Technology 94 (IIT 94), 13-17 Jun 1994, Catania, Italy.

Foad, M., Armour, D. and England, Jonathan (1995) The Use of KOBRA for Implanter Beamline Design and Optimisation In: Ion Implantation Technology 94 (IIT 94), 13-17 Jun 1994, Catania, Italy.

England, Jonathan (1993) Advanced charge neutralisation In: European Semiconductor 19, Nov 1993.

England, Jonathan (1993) Wafer Charging Effects in Ion Implantation Processing In: Wafer Charging Effects in Ion Implantation Processing, Berkeley Short Course, 10-11 Jun 1993, Dallas, U.S.A..

Ito, H., Plumb, F., England, Jonathan, Fotheringham, I. and Kindersley, P. (1993) Considerations for Advanced Charging Solutions Applied to ULSI Device Fabrication In: Ninth International Conference on Ion Implantation Technology (IIT 92), Sep 20-24, 1992, Gainesvile, Florida, USA.

England, Jonathan, Bryan, N., Ito, H., Armour, D., Van den Berg, J., Fotheringham, I. and Kindersley, P. (1993) Measurement of Beam Potentials and Surface Voltages on Semiconductor Wafers Using an Ion Spectrometer In: Ninth International Conference on Ion Implantation Technology (IIT 92), Sep 20-24, 1992, Gainesvile, Florida, USA.

Thesis

England, James A. (2002) Calculation of theoretical NMR chemical shieldings in small molecules. Doctoral thesis, University of Surrey (United Kingdom)..

Patent

Waite, et al. (2015) Method of doping a polycrystalline transistor channel for vertical NAND devices 9,018,064.

England, et al. (2015) Techniques for generating three dimensional structures 8,937,019.

England, et al. (2014) Method of implanting high aspect ratio features 8,846,508.

England, et al. (2013) Techniques for temperature-controlled ion implantation 8,450,193.

England, et al. (2012) Technique for low-temperature ion implantation 8,319,196.

England , et al. (2011) Particle beam assisted modification of thin film materials 8,003,498.

Blake, et al. (2011) Techniques for temperature controlled ion implantation 7,993,698.

England, et al. (2011) Technique for low-temperature ion implantation 7,935,942.

Koo, et al. (2011) Measuring energy contamination using time-of-flight techniques 7,888,636.

Koo, et al. (2011) Measuring energy contamination using time-of-flight techniques 7,888,636.

England, et al. (2010) Techniques for temperature-controlled ion implantation 7,655,933.

Arevalo, et al. (2010) Techniques for forming shallow junctions 7,642,150.

England, et al. (2009) Ion implantation device with a dual pumping mode and method thereof 7,622,722.

Gupta, et al. (2009) Technique for improving ion implantation based on ion beam angle-related information 7,561,983.

Renau, et al. (2009) Techniques for providing a ribbon-shaped gas cluster ion beam 7,547,900.

England, et al. (2009) Techniques for low-temperature ion implantation 7,528,392.

Low, et al. (2009) Techniques for preventing parasitic beamlets from affecting ion implantation 7,482,598.

Low, et al. (2009) Techniques for reducing effects of photoresist outgassing 7,476,878.

Chaney, et al. (2008) Technique for improving ion implanter productivity 7,446,326.

Low, et al. (2008) Methods and apparatus for glitch recovery in stationary-beam ion implantation process using fast ion beam control 7,361,913.

Olson, et al. (2008) Technique for uniformity tuning in an ion implanter system 7,355,188.

England, et al. (2000) Beam stop apparatus for an ion implanter 6,060,715.

England, et al. (2000) Ion beam apparatus and a method for neutralizing space charge in an ion beam 6,060,715.

England, et al. (2000) Method and apparatus for ion beam scanning in an ion implanter 6,060,715.

England, et al. (1999) Ion implanter with post mass selection deceleration 5,969,366.

England, et al. (1999) Ion implanter with post mass selection deceleration 5932882.

Adibi, et al. (1999) Ion implantation apparatus and a method of monitoring high energy neutral contamination in an ion implantation process 5883391.

Armour, et al. (1995) Spectrum analyzer in an ion implanter 5,457,324.

Ito, et al. (1995) Plasma flood system for the reduction of charging of wafers during ion implantation 5,399,871.

Armour, et al. (1995) Spectrum analyzer in an ion implanter 5,384,465.

This list was generated on Tue Nov 21 23:23:38 2017 UTC.

Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800