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Items where Author is "Elsner, J"

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Article

Blumenau, AT, Fall, CJ, Elsner, J, Jones, R, Heggie, MI and Frauenheim, T (2003) A theoretical investigation of dislocations in cubic and hexagonal gallium nitride Physica Status Solidi C: Conferences (6 SPEC). pp. 1684-1709.

Blumenau, AT, Elsner, J, Jones, R, Heggie, MI, Öberg, S, Frauenheim, T and Briddon, PR (2000) Dislocations in hexagonal and cubic GaN Journal of Physics Condensed Matter, 12 (49). pp. 10223-10233.

Elsner, J, Blumenau, AT, Frauenheim, T, Jones, R and Heggie, MI (2000) Structural and electronic properties of line defects in GaN MRS Internet Journal of Nitride Semiconductor Research, 5 (SUPPL.).

Haugk, M, Elsner, J, Frauenheim, T, Staab, TEM, Latham, CD, Jones, R, Leipner, HS, Heine, T, Seifert, G and Sternberg, M (2000) Structures, energetics and electronic properties of complex III–V semiconductor systems Physica Status Solidi B: Basic Solid State Physics, 217 (1). pp. 473-511.

Elsner, J, Frauenheim, T, Haugk, M, Gutierrez, R, Jones, R and Heggie, MI (1999) Extended defects in GaN: A theoretical study MRS Internet Journal of Nitride Semiconductor Research, 4 (SUPPL.).

Elsner, J, Fraucnheim, T, Haugk, M, Gutierrez, R, Jones, R and Heggie, MI (1999) Extended defects in GaN: a theoretical study Materials Research Society Symposium - Proceedings, 537.

Jones, R, Elsner, J, Haugk, M, Gutierrez, R, Frauenheim, TH, Heggie, MI, Öberg, S and Briddon, PR (1999) Interaction of Oxygen with Threading Dislocations in GaN Physica Status Solidi (A) Applied Research, 171 (1). pp. 167-173.

Gutiérrez, R, Haugk, M, Frauenheim, T, Elsner, J, Jones, R, Heggie, MI, Öberg, S and Briddon, PR (1999) The formation of nanopipes caused by donor impurities in GaN: A theoretical study for the case of oxygen Philosophical Magazine Letters, 79 (2-3). pp. 147-152.

Elsner, J, Kaukonen, M, Heggie, MI, Haugk, M, Frauenheim, T and Jones, R (1998) Domain boundaries on {112̄0} planes in GaN: A theoretical study Physical Review B - Condensed Matter and Materials Physics, 58 (23). pp. 15347-15350.

Elsner, J, Jones, R, Heggie, MI, Sitch, PK, Haugk, M, Frauenheim, T, Öberg, S and Briddon, PR (1998) Deep acceptors trapped at threading-edge dislocations in GaN Physical Review B - Condensed Matter and Materials Physics, 58 (19). pp. 12571-12574.

Elsner, J, Jones, R, Haugk, M, Gutierrez, R, Frauenheim, T, Heggie, MI, Öberg, S and Briddon, PR (1998) Effect of oxygen on the growth of (101̄0) GaN surfaces: The formation of nanopipes Applied Physics Letters, 73 (24). pp. 3530-3532.

Elsner, J, Jones, R, Sitch, PK, Frauenheim, T, Heggie, MI, Öberg, S and Briddon, PR (1997) Structural and electrical properties of threading dislocations in GaN Materials Science Forum, 258-26 (PART 2). pp. 1203-1210.

Elsner, J, Jones, R, Sitch, PK, Porezag, VD, Elstner, M, Frauenheim, T, Heggie, MI, Öberg, S and Briddon, PR (1997) Theory of threading edge and screw dislocations in GaN Physical Review Letters, 79 (19). pp. 3672-3675.

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