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Items where Author is "Egorov, A"

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Number of items: 4.

Article

Jin, SR, Fehse, R, Sweeney, SJ, Knowles, G, Adams, AR, O'Reilly, EP, Reichert, H, Illek, S, Egorov, AY, Thijs, PJA, Uchida, T and Fujii, T (2002) Modal refractive index of 1.3 mu m InGaAsP, AlGaInAs and GaInNAs semiconductor lasers under high hydrostatic pressure ELECTRONICS LETTERS, 38 (7). pp. 325-327.

Fehse, R, Jin, S, Sweeney, SJ, Adams, AR, O'Reilly, EP, Riechert, H, Illek, S and Egorov, AY (2001) Evidence for large monomolecular recombination contribution to threshold current in 1.3 mu m GaInNAs semiconductor lasers ELECTRONICS LETTERS, 37 (25). pp. 1518-1520.

Fehse, R, Sweeney, SJ, Adams, AR, O'Reilly, EP, Egorov, AY, Riechert, H and Illek, S (2001) Insights into carrier recombination processes in 1.3 mu m GaInNAs-based semiconductor lasers attained using high pressure ELECTRONICS LETTERS, 37 (2). pp. 92-93.

Conference or Workshop Item

Fehse, R, Jin, S, Sweeney, SJ, Adams, AR, O'Reilly, EP, Illek, S, Egorov, AY and Riechert, H (2001) The temperature dependence of the recombination processes in 1.3 mu m GaInNAs-based edge emitting lasers In: 14th Annual Meeting of the IEEE Lasers-and-Electro-Optics-Society, 2001-11-11 - 2001-11-15, SAN DIEGO, CA.

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