Items where Author is "David, JPR"
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Article
Tan, SL, Hunter, CJ, Zhang, S, Tan, LJJ, Goh, YL, Ng, JS, David, JPR, Marko, IP, Sweeney, SJ, Adams, AR and Allam, J (2012) Improved optoelectronic properties of rapid thermally annealed dilute nitride GaInNAs photodetectors Journal of Electronic Materials, 41 (12). 3393 - 3401. ISSN 0361-5235
Mohmad, AR, Bastiman, F, Hunter, CJ, Richards, R, Sweeney, SJ, Ng, JS and David, JPR (2012) Effects of rapid thermal annealing on GaAs1-xBix alloys APPLIED PHYSICS LETTERS, 101 (1). ? - ?. ISSN 0003-6951
Mohmad, AR, Bastiman, F, Hunter, CJ, Ng, JS, Sweeney, SJ and David, JPR (2011) The effect of Bi composition to the optical quality of GaAs1-xBix APPLIED PHYSICS LETTERS, 99 (4). ? - ?. ISSN 0003-6951
Mohmad, AR, Bastiman, F, Ng, JS, Sweeney, SJ and David, JPR (2011) Photoluminescence investigation of high quality GaAs1-xBix on GaAs APPLIED PHYSICS LETTERS, 98 (12). ? - ?. ISSN 0003-6951
Ng, JS, Soong, WM, Steer, MJ, Hopkinson, M, David, JPR, Chamings, J, Sweeney, SJ and Adams, AR (2007) Long wavelength bulk GaInNAs p-i-n photodiodes lattice matched to GaAs JOURNAL OF APPLIED PHYSICS, 101 (6). ? - ?. ISSN 0021-8979
Ng, JS, Soong, WM, Steer, MJ, Hopkinson, M, David, JPR, Chamings, J, Sweeney, SJ and Adams, AR (2007) Long wavelength bulk GaInNAs p-i-n photodiodes lattice matched to GaAs JOURNAL OF APPLIED PHYSICS, 101 (6). ? - ?. ISSN 0021-8979
Conference or Workshop Item
Ng, JS, Tan, SL, Goh, YL, Tan, CH, David, JPR, Allam, J, Sweeney, SJ and Adams, AR (2010) InGaAsN as absorber in APDs for 1.3 micron wavelength applications In: IPRM 2010, 2010-05-31 - 2010-06-04, Kagawa, Japan.
Tan, SL, Tan, LJJ, Goh, YL, Zhang, S, Ng, JS, David, JPR, Marko, IP, Allam, J, Sweeney, SJ and Adams, AR (2010) Reduction of dark current and unintentional background doping in InGaAsN photodetectors by ex situ annealing In: Optical Sensing and Detection, 2010-04-12 - 2010-04-15, Brussels, Belgium.
Soong, WM, Ng, JS, Steer, MJ, Hopkinson, M, David, JPR, Chamings, J, Sweeney, SJ, Adams, AR and Allam, J (2008) Dark current mechanisms in bulk GaInNAs photodiodes In: IPRM 2008, 2008-05-25 - 2008-05-29, Versailles, France.
