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Items where Author is "Current, M"

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Current, M. I., Lopes, D., Foad, M.A., England, Jonathan, Jones, C. and Su, D. (1998) 200 eV–10 keV boron implantation and rapid thermal annealing: Secondary ion mass spectroscopy and transmission electron microscopy study Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 16 (1). pp. 327-333.

Niby, MA, Li, DQ, Lourenco, MA, Nejim, A, Homewood, KP, Hemment, PLF, Ishidida, E, Current, M, Banerjee, S, Larson, L, Mehta, S, Tasch, A, Smith, TC and Romig, T (1997) The lifetime distribution of excess carriers in H+ ion implanted silicon by photoconductive frequency resolved spectroscopy ION IMPLANTATION TECHNOLOGY - 96. pp. 668-671.

Wauk, Michael T., Castle, Matt, England, Jonathan and Current, Michael (1994) Controlling heavy metal and dopant contamination during ion implantation Microcontamination, 12 (10). pp. 29-37.

England, Jonathan, Current, Michael I., Kamata, T., Malone, Phil and Ito, Hiro (1994) Charge neutralisation during high-current ion implantation Solid State Technology. pp. 115-118.

Book Section

Webb, RP, Current, MI, Yamada, I, Mack, M, Gwinn, M and Jacobson, D (2006) Molecular and Cluster Ion Beams: Doping and Deposition with "Massive" Ions In: Ion Implantation Science and Technology. Ion Implantation Technology Co., MD USA, 10-1 - 10-28.

Conference or Workshop Item

England, Jonathan, Joyce, L., Burgess, C., Moffatt, S., Foad, M., Armour, D. and Current, M. (1997) The Applied Materials xRLEAP ion implanter for ultra shallow junction formation In: 11th International Conference on Ion Implantation Technology, 16-21 Jun 1996, Austin, Texas, USA.

Ito, H., Kamata, T., England, Jonathan, Fotheringham, I., Plumb, F. and Current, M. (1995) The Precision Implant 9500 Plasma Flood System In: Ion Implantation Technology 94 (IIT 94), 13-17 Jun 1994, Catania, Italy.

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