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Items where Author is "Cristiano, F"

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Number of items: 13.

Article

Sharp, JA, Smith, AJ, Webb, RP, Kirkby, KJ, Cowern, NEB, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA, Fazzini, PF and Cristiano, F (2008) Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing APPL PHYS LETT, 92 (8), 082109.

Sharp, JA, Smith, AJ, Webb, RP, Kirkby, KJ, Cowern, NEB, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA, Fazzini, PF and Cristiano, F (2008) Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing APPL PHYS LETT, 92 (8), 082109.

Sharp, JA, Cowern, NEB, Webb, RP, Kirkby, KJ, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA, Cristiano, F and Fazzini, PF (2006) Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans APPLIED PHYSICS LETTERS, 89 (19), ARTN 1.

Abdulmalik, DA, Coleman, PG, Cowern, NEB, Smith, AJ, Sealy, BJ, Lerch, W, Paul, S and Cristiano, F (2006) Fluorine-vacancy complexes in ultrashallow B-implanted Si APPLIED PHYSICS LETTERS, 89 (5), ARTN 0.

Schiz, J. F. W., Lamb, Andrew C., Cristiano, Fuccio, Bonar, J. M., Ashburn, Peter, Hall, Stephen and Hemment, P. L. F. (2001) Leakage current mechanisms in SiGe HBTs fabricated using selective and nonselective epitaxy IEEE Transactions on Electron Devices. pp. 2492-2499.

Nejim, A, Gwilliam, RM, Emerson, NG, Knights, AP, Cristiano, F, Barradas, NP and Jeynes, C (1999) Electrical behaviour associated with defect tails in germanium implanted silicon Proceedings of the International Conference on Ion Implantation Technology, 1. pp. 506-509.

Mitchell, M., Nigrin, S., Cristiano, F., Ashburn, P. and Hemment, Peter L. F. (1999) Characterisation of NPN and PNP SiGe heterojunction bipolar transistors formed by Ge+ implantation 1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. pp. 254-259.

Nejim, A., Cristiano, F., Knights, A. P., Barradas, N. P., Hemment, P. L. F. and Coleman, P. G. (1998) Dose rate dependence of residual defects in device grade Si/SiGe heterostructures formed by ion beam synthesis Proceedings of the 1998 International Conference on Ion Implantation Technology, 2. pp. 692-695.

Cristiano, F., Nejim, A. and Hemment, Peter L. F. (1998) The surface proximity effect on the formation of extended defects in ion beam synthesised SiGe/Si heterostructures 1998 International Conference on Ion Implantation Technology Proceedings, 2. pp. 913-916.

Barklie, R. C., O'Raifeartaigh, C., Nylandsted-Larsen, A., Priolo, F., Lulli, G., Grob, J. J., Mesli, A., Lindner, J. K. N., Cristiano, F. and Hemment, P. L. F. (1996) Ion implantation induced damage in relaxed Si1-xGex Proceedings of the 11th International Conference on Ion Implantation Technology.

Nejim, A., Cristiano, F., Gwilliam, R. M., Hemment, P. L. F., Hope, D. A. O., Newey, J. and Houlton, M. R. (1996) Synthesis of Si/Si1-xGex/Si heterostructures for device applications using Ge+ implantation into silicon Proceedings of the 11th International Conference on Ion Implantation Technology.

Conference or Workshop Item

Nejim, A, Barradas, NP, Jeynes, C, Cristiano, F, Wendler, E, Gartner, K and Sealy, BJ (1998) Residual post anneal damage of Ge and C co-implantation of Si determined by quantitative RBS-channelling In: 5th European Conference on Accelerators in Applied Research and Technology (ECAART5), 1997-08-26 - 1997-08-30, EINDHOVEN UNIV, EINDHOVEN, NETHERLANDS.

Thesis

Cristiano, Filadelfo. (1998) Extended defects in SiGe device structures formed by ion implantation. Doctoral thesis, University of Surrey (United Kingdom)..

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