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Items where Author is "Cowern, N"

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Number of items: 41.

Article

Pawlak, BJ, Cowern, NEB, Ahn, C, Vandervorst, W, Gwilliam, R and van Berkum, JGM (2014) Local traps as nanoscale reaction-diffusion probes: B clustering in c-Si APPLIED PHYSICS LETTERS, 105 (22), ARTN 22160.

Bennett, NS, Radamson, HH, Beer, CS, Smith, AJ, Gwilliam, RM, Cowern, NEB and Sealy, BJ (2008) Enhanced n-type dopant solubility in tensile-strained Si THIN SOLID FILMS, 517 (1). pp. 331-333.

O'Reilly, L, Horan, K, McNally, PJ, Bennett, NS, Cowern, NEB, Lankinen, A, Sealy, BJ, Gwilliam, RM, Noakes, TCQ and Bailey, P (2008) Constraints on micro-Raman strain metrology for highly doped strained Si materials APPLIED PHYSICS LETTERS, 92 (23), ARTN 2.

Sharp, JA, Smith, AJ, Webb, RP, Kirkby, KJ, Cowern, NEB, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA, Fazzini, PF and Cristiano, F (2008) Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing APPL PHYS LETT, 92 (8), 082109.

Sharp, JA, Smith, AJ, Webb, RP, Kirkby, KJ, Cowern, NEB, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA, Fazzini, PF and Cristiano, F (2008) Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing APPL PHYS LETT, 92 (8), 082109.

Bennett, NS, Smith, AJ, Gwilliam, RM, Webb, RP, Sealy, BJ, Cowern, NEB, O'Reilly, L and McNally, PJ (2008) Antimony for n-type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic? JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 26 (1). pp. 391-395.

Bennett, NS, Cowern, NEB, Smith, AJ, Kah, M, Gwilliam, RM, Sealy, BJ, Noakes, TCQ, Bailey, P, Giubertoni, D and Bersani, M (2008) Differential Hall characterisation of ultrashallow doping in advanced Si-based materials Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 154-15 (1-3). pp. 229-233.

Cowern, NEB, Smith, AJ, Bennett, N, Sealy, BJ, Gwilliam, R, Webb, RP, Colombeau, B, Paul, S, Lerch, W and Pakfar, A (2008) Vacancy engineering - An ultra-low thermal budget method for high-concentration 'diffusionless' implantation doping Materials Science Forum, 573-57. pp. 295-304.

Ferri, M, Solmi, S, Giubertoni, D, Bersani, M, Hamilton, JJ, Kah, M, Kirkby, K, Collart, EJH and Cowern, NEB (2007) Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator JOURNAL OF APPLIED PHYSICS, 102 (10), ARTN 1.

Christmas, UME, Faux, DA and Cowern, NEB (2007) Elastic interaction energy between a silicon interstitial and a carbon substitutional in a silicon crystal PHYSICAL REVIEW B, 76 (20), ARTN 2.

Hamilton, JJ, Kirkby, KJ, Cowern, NEB, Collart, EJH, Bersani, M, Giubertoni, D, Gennaro, S and Parisini, A (2007) Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink APPLIED PHYSICS LETTERS, 91 (9), ARTN 0.

Gwilliam, R, Cowern, NEB, Colombeau, B, Sealy, B and Smith, AJ (2007) Vacancy engineering for ultra-shallow junction formation NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 261 (1-2). pp. 600-603.

Hamilton, JJ, Collart, EJH, Bersani, M, Giubertoni, D, Gennaro, S, Bennett, NS, Cowern, NEB and Kirkby, KJ (2006) Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in silicon-on-insulator AIP Conference Proceedings, 866. pp. 73-75.

Sharp, JA, Cowern, NEB, Webb, RP, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA and Kirkby, KJ (2006) Deactivation of B and BF2 profiles after non-melt laser annealing Materials Research Society Symposium Proceedings, 912. pp. 159-163.

Hamilton, JJ, Collart, EJH, Colombeau, B, Bersani, M, Giubertoni, D, Kah, M, Cowern, NEB and Kirkby, KJ (2006) Effect of B dose and Ge preamorphization energy on the electrical and structural properties of ultrashallow junctions in silicon-on-insulator Materials Research Society Symposium Proceedings, 912. pp. 45-50.

Sharp, JA, Cowern, NEB, Webb, RP, Kirkby, KJ, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA, Cristiano, F and Fazzini, PF (2006) Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans APPLIED PHYSICS LETTERS, 89 (19), ARTN 1.

Bennett, NS, Cowern, NEB, Smith, AJ, Gwilliam, RM, Sealy, BJ, O'Reilly, L, McNally, PJ, Cooke, G and Kheyrandish, H (2006) Highly conductive Sb-doped layers in strained Si APPLIED PHYSICS LETTERS, 89 (18), ARTN 1.

Abdulmalik, DA, Coleman, PG, Cowern, NEB, Smith, AJ, Sealy, BJ, Lerch, W, Paul, S and Cristiano, F (2006) Fluorine-vacancy complexes in ultrashallow B-implanted Si APPLIED PHYSICS LETTERS, 89 (5), ARTN 0.

Hamilton, JJ, Cowern, NEB, Sharp, JA, Kirkby, KJ, Collart, EJH, Colombeau, B, Bersani, M, Giubertoni, D and Parisini, A (2006) Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si/SiO2 interface APPLIED PHYSICS LETTERS, 89 (4), ARTN 0.

Hamilton, JJ, Cowern, NEB, Sharp, JA, Kirkby, KJ, Collart, EJH, Colombeau, B, Bersani, M, Giubertoni, D and Parisini, A (2006) Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si/SiO2 interface APPLIED PHYSICS LETTERS, 89 (4), ARTN 0.

Smith, AJ, Cowern, NEB, Gwilliam, R, Sealy, BJ, Colombeau, B, Collart, EJH, Gennaro, S, Giubertoni, D, Bersani, M and Barozzi, M (2006) Vacancy-engineering implants for high boron activation in silicon on insulator APPLIED PHYSICS LETTERS, 88 (8), ARTN 0.

Hamilton, JJ, Colombeau, B, Sharp, JA, Cowern, NEB, Kirkby, KJ, Collart, EJH, Bersani, M and Giubertoni, D (2006) Effect of buried Si SiO2 interface on dopant and defect evolution in preamorphizing implant ultrashallow junction Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 24 (1). pp. 442-445.

Bennett, NS, Smith, AJ, Beer, CS, O'Reilly, L, Colombeau, B, Dilliway, GD, Harper, R, McNally, PJ, Gwilliam, R, Cowern, NEB and Sealy, BJ (2006) Enhanced antimony activation for ultra-shallow junctions in strained silicon Doping Engineering for Device Fabrication, 912. pp. 59-64.

Smith, AJ, Cowern, NEB, Colombeau, B, Gwilliam, R, Sealy, BJ, Collart, EJH, Gennaro, S, Giubertoni, D, Bersani, M and Barozzi, M (2006) Junction stability of B doped layers in SOI formed with optimized vacancy engineering implants Ion Implantation Technology, 866. pp. 84-87.

Sealy, BJ, Smith, AJ, Alzanki, T, Bennett, N, Li, L, Jeynes, C, Colombeau, B, Collart, EJH, Emerson, NG, Gwilliam, RM and Cowern, NEB (2006) Shallow junctions in silicon via low thermal budget processing Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06. pp. 10-15.

Bennett, NS, O'Reilly, L, Smith, AJ, Gwilliam, RM, McNally, PJ, Cowern, NEB and Sealy, BJ (2006) Strain-enhanced activation of Sb ultrashallow junctions Ion Implantation Technology, 866. pp. 54-57.

Gwilliam, RM, Cowern, NEB, Colombeau, B, Sealy, B and Smith, AJ (2006) Ultra-shallow junction formation in SOI using vacancy engineering Physics of Ionized Gases, 876. pp. 181-190.

Dilliway, GDM, Cowern, NEB, Xu, L, McNally, PJ, Jeynes, C, Mendoza, E, Ashburn, P and Bagnall, DM (2004) Influence of H2 preconditioning on the nucleation and growth of self-assembled germanium islands on silicon (001) Materials Research Society Symposium Proceedings, 820. pp. 351-356.

Dilliway, GDM, Cowern, NEB, Jeynes, C, O'Reilly, L, McNally, PJ and Bagnall, DM (2003) Structural and compositional evolution of self-assembled germanium islands on silicon (001) during high growth rate LPCVD Materials Research Society Symposium - Proceedings, 775. pp. 275-280.

Conference or Workshop Item

Bennett, NS, Cowern, NEB, Kheyrandish, H, Paul, S, Lerch, W, Smith, AJ, Gwilliam, R and Sealy, BJ (2008) Vacancy engineering for highly activated 'diffusionless' boron doping in bulk silicon In: ESSDERC 2008, 2008-09-15 - 2008-09-19, Edinburgh, UK.

Ferri, M, Solmi, S, Giubertoni, D, Bersani, M, Hamilton, JJ, Kah, M, Cowern, NEB, Kirkby, K and Collart, EJH (2007) Boron pile-up phenomena during ultra shallow junction formation

Sharp, JA, Cowern, NEB, Webb, RP, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA and Kirkby, KJ (2006) Deactivation of low energy boron implants into pre-amorphised Si after non-melt laser annealing with multiple scans In: 16th International Conference on Ion Implantation Technology, 2006-06-11 - 2006-06-16, Marseille, FRANCE.

Sharp, JA, Cowern, NEB, Webb, RP, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA and Kirkby, KJ (2006) Deactivation of ultra shallow B and BF2 profiles after non-melt laser annealing In: Symposium on Sub Second Rapid Thermal Processing for Device Fabrication held at the 2006 MRS Spring Meeting, 2006-04-18 - 2006-04-19, San Francisco, CA.

Hamilton, JJ, Collart, EJH, Colombeau, B, Bersani, M, Giubertoni, D, Kah, M, Cowern, NEB and Kirkby, KJ (2006) Effect of B dose and Ge prearnorphization energy on the electrical and structural properties of ultrashallow junctions in silicon-on-insulator In: Symposium on Sub Second Rapid Thermal Processing for Device Fabrication held at the 2006 MRS Spring Meeting, 2006-04-18 - 2006-04-19, San Francisco, CA.

Hamilton, JJ, Collart, EJH, Bersani, M, Giubertoni, D, Gennaro, S, Bennett, NS, Cowern, NEB and Kirkby, KJ (2006) Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in Silicon-on-insulator In: 16th International Conference on Ion Implantation Technology, 2006-06-11 - 2006-06-16, Marseille, FRANCE.

Hamilton, JJ, Collart, EJH, Colombeau, B, Jeynes, C, Bersani, M, Giubertoni, D, Sharp, JA, Cowern, NEB and Kirkby, KJ (2005) Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI In: 15th International Conference on Ion Implantation Technology, 2004-10-25 - 2004-10-27, Taipei, TAIWAN.

Xu, L, McNally, PJ, Dilliway, GDM, Cowern, NEB, Jeynes, C, Mendoza, E, Ashburn, P and Bagnall, DM (2005) Raman study of the strain and H-2 preconditioning effect on self-assembled Ge island on Si (001) In: 5th International Conference on Materials for Microelectronics and Nanoengineering, 2004-09-13 - 2004-09-14, Univ Southampton, Southampton, ENGLAND.

Cowern, NEB, Smith, AJ, Colombeau, B, Gwilliam, R, Sealy, BJ and Collart, EJH (2005) Understanding, modeling and optimizing vacancy engineering for stable highly boron-doped ultrashallow junctions In: IEEE International Electron Devices Meeting, 2005-12-05 - 2005-12-07, Washington, DC.

Smith, A J, Colombeau, B, Gwilliam, R, Collart, E, Cowern, N E B and Sealy, B J (2004) Doping and Mobility Profiles in Defect-Engineered Ultra-Shallow Junctions: Bulk and SOI

Dilliway, GDM, Bagnall, DM, Cowern, NEB and Jeynes, C (2003) Self-assembled germanium islands grown on (001) silicon substrates by low-pressure chemical vapor deposition In: 4th International Conference on Materials for Microelectronics and Nanoengineering, 2002-06-10 - 2002-06-12, ESPOO, FINLAND.

Nejim, A, Jeynes, C, Webb, RP, Cowern, NEB and Patel, CJ (1997) Influence of dynamic annealing on the depth distribution of germanium implanted in (100) silicon at elevated temperatures In: Symposium on Defects and Diffusion in Silicon Processing, 1997-04-01 - 1997-04-04, SAN FRANCISCO, CA.

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