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Items where Author is "Colombeau, B"

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Number of items: 19.

Article

Kah, M, Smith, AJ, Hamilton, JJ, Sharp, J, Yeong, SH, Colombeau, B, Gwilliam, R, Webb, RP and Kirkby, KJ (2008) Interaction of the end of range defect band with the upper buried oxide interface for B and BF2 implants in Si and silicon on insulator with and without preamorphizing implant JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 26 (1). pp. 347-350.

Cowern, NEB, Smith, AJ, Bennett, N, Sealy, BJ, Gwilliam, R, Webb, RP, Colombeau, B, Paul, S, Lerch, W and Pakfar, A (2008) Vacancy engineering - An ultra-low thermal budget method for high-concentration 'diffusionless' implantation doping Materials Science Forum, 573-57. pp. 295-304.

Gwilliam, R, Cowern, NEB, Colombeau, B, Sealy, B and Smith, AJ (2007) Vacancy engineering for ultra-shallow junction formation NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 261 (1-2). pp. 600-603.

Hamilton, JJ, Collart, EJH, Colombeau, B, Bersani, M, Giubertoni, D, Kah, M, Cowern, NEB and Kirkby, KJ (2006) Effect of B dose and Ge preamorphization energy on the electrical and structural properties of ultrashallow junctions in silicon-on-insulator Materials Research Society Symposium Proceedings, 912. pp. 45-50.

Mok, KRC, Colombeau, B, Jaraiz, M, Castrillo, P, Rubio, JE, Pinacho, R, Srinivasan, MP, Benistant, F, Martin-Bragado, I and Hamilton, JJ (2006) Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowth Materials Research Society Symposium Proceedings, 912. pp. 99-104.

Hamilton, JJ, Cowern, NEB, Sharp, JA, Kirkby, KJ, Collart, EJH, Colombeau, B, Bersani, M, Giubertoni, D and Parisini, A (2006) Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si/SiO2 interface APPLIED PHYSICS LETTERS, 89 (4), ARTN 0.

Hamilton, JJ, Cowern, NEB, Sharp, JA, Kirkby, KJ, Collart, EJH, Colombeau, B, Bersani, M, Giubertoni, D and Parisini, A (2006) Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si/SiO2 interface APPLIED PHYSICS LETTERS, 89 (4), ARTN 0.

Smith, AJ, Cowern, NEB, Gwilliam, R, Sealy, BJ, Colombeau, B, Collart, EJH, Gennaro, S, Giubertoni, D, Bersani, M and Barozzi, M (2006) Vacancy-engineering implants for high boron activation in silicon on insulator APPLIED PHYSICS LETTERS, 88 (8), ARTN 0.

Hamilton, JJ, Colombeau, B, Sharp, JA, Cowern, NEB, Kirkby, KJ, Collart, EJH, Bersani, M and Giubertoni, D (2006) Effect of buried Si SiO2 interface on dopant and defect evolution in preamorphizing implant ultrashallow junction Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 24 (1). pp. 442-445.

Bennett, NS, Smith, AJ, Beer, CS, O'Reilly, L, Colombeau, B, Dilliway, GD, Harper, R, McNally, PJ, Gwilliam, R, Cowern, NEB and Sealy, BJ (2006) Enhanced antimony activation for ultra-shallow junctions in strained silicon Doping Engineering for Device Fabrication, 912. pp. 59-64.

Smith, AJ, Cowern, NEB, Colombeau, B, Gwilliam, R, Sealy, BJ, Collart, EJH, Gennaro, S, Giubertoni, D, Bersani, M and Barozzi, M (2006) Junction stability of B doped layers in SOI formed with optimized vacancy engineering implants Ion Implantation Technology, 866. pp. 84-87.

Sealy, BJ, Smith, AJ, Alzanki, T, Bennett, N, Li, L, Jeynes, C, Colombeau, B, Collart, EJH, Emerson, NG, Gwilliam, RM and Cowern, NEB (2006) Shallow junctions in silicon via low thermal budget processing Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06. pp. 10-15.

Gwilliam, RM, Cowern, NEB, Colombeau, B, Sealy, B and Smith, AJ (2006) Ultra-shallow junction formation in SOI using vacancy engineering Physics of Ionized Gases, 876. pp. 181-190.

Conference or Workshop Item

Smith, AJ, Yeong, SH, Colombeau, B, Sealy, BJ and Gwilliam, RM (2008) The Formation of Ultra-Shallow Phosphorous Doped Layers Using Vacancy Engineering In: 17th International Conference on Ion Implantation Technology, 2008-06-08 - 2008-06-13, Monterey, CA.

Smith, AJ, Antwis, LD, Yeong, SH, Knights, AP, Colombeau, B, Sealy, BJ and Gwilliam, RM (2008) Junction Leakage Analysis of Vacancy Engineered Ultra-Shallow p-type Layers In: 17th International Conference on Ion Implantation Technology, 2008-06-08 - 2008-06-13, Monterey, CA.

Hamilton, JJ, Collart, EJH, Colombeau, B, Bersani, M, Giubertoni, D, Kah, M, Cowern, NEB and Kirkby, KJ (2006) Effect of B dose and Ge prearnorphization energy on the electrical and structural properties of ultrashallow junctions in silicon-on-insulator In: Symposium on Sub Second Rapid Thermal Processing for Device Fabrication held at the 2006 MRS Spring Meeting, 2006-04-18 - 2006-04-19, San Francisco, CA.

Hamilton, JJ, Collart, EJH, Colombeau, B, Jeynes, C, Bersani, M, Giubertoni, D, Sharp, JA, Cowern, NEB and Kirkby, KJ (2005) Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI In: 15th International Conference on Ion Implantation Technology, 2004-10-25 - 2004-10-27, Taipei, TAIWAN.

Cowern, NEB, Smith, AJ, Colombeau, B, Gwilliam, R, Sealy, BJ and Collart, EJH (2005) Understanding, modeling and optimizing vacancy engineering for stable highly boron-doped ultrashallow junctions In: IEEE International Electron Devices Meeting, 2005-12-05 - 2005-12-07, Washington, DC.

Smith, A J, Colombeau, B, Gwilliam, R, Collart, E, Cowern, N E B and Sealy, B J (2004) Doping and Mobility Profiles in Defect-Engineered Ultra-Shallow Junctions: Bulk and SOI

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