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Items where Author is "Collart, E"

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Article

Collart, EJH, Teel, R, Free, C, Wan, Z, Kopalidis, P, Razali, MA, Gwilliam, R, Smith, A, Tsidilkovski, E and Karpowicz, T (2010) Process characterization of low temperature ion implantation using ribbon beam and spot beam on the AIBT iPulsar high current AIP Conference Proceedings, 1321. pp. 49-52.

Ferri, M, Solmi, S, Giubertoni, D, Bersani, M, Hamilton, JJ, Kah, M, Kirkby, K, Collart, EJH and Cowern, NEB (2007) Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator JOURNAL OF APPLIED PHYSICS, 102 (10), ARTN 1.

Hamilton, JJ, Kirkby, KJ, Cowern, NEB, Collart, EJH, Bersani, M, Giubertoni, D, Gennaro, S and Parisini, A (2007) Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink APPLIED PHYSICS LETTERS, 91 (9), ARTN 0.

Hamilton, JJ, Collart, EJH, Bersani, M, Giubertoni, D, Gennaro, S, Bennett, NS, Cowern, NEB and Kirkby, KJ (2006) Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in silicon-on-insulator AIP Conference Proceedings, 866. pp. 73-75.

Hamilton, JJ, Collart, EJH, Colombeau, B, Bersani, M, Giubertoni, D, Kah, M, Cowern, NEB and Kirkby, KJ (2006) Effect of B dose and Ge preamorphization energy on the electrical and structural properties of ultrashallow junctions in silicon-on-insulator Materials Research Society Symposium Proceedings, 912. pp. 45-50.

Hamilton, JJ, Cowern, NEB, Sharp, JA, Kirkby, KJ, Collart, EJH, Colombeau, B, Bersani, M, Giubertoni, D and Parisini, A (2006) Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si/SiO2 interface APPLIED PHYSICS LETTERS, 89 (4), ARTN 0.

Hamilton, JJ, Cowern, NEB, Sharp, JA, Kirkby, KJ, Collart, EJH, Colombeau, B, Bersani, M, Giubertoni, D and Parisini, A (2006) Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si/SiO2 interface APPLIED PHYSICS LETTERS, 89 (4), ARTN 0.

Smith, AJ, Cowern, NEB, Gwilliam, R, Sealy, BJ, Colombeau, B, Collart, EJH, Gennaro, S, Giubertoni, D, Bersani, M and Barozzi, M (2006) Vacancy-engineering implants for high boron activation in silicon on insulator APPLIED PHYSICS LETTERS, 88 (8), ARTN 0.

Hamilton, JJ, Colombeau, B, Sharp, JA, Cowern, NEB, Kirkby, KJ, Collart, EJH, Bersani, M and Giubertoni, D (2006) Effect of buried Si SiO2 interface on dopant and defect evolution in preamorphizing implant ultrashallow junction Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 24 (1). pp. 442-445.

Smith, AJ, Cowern, NEB, Colombeau, B, Gwilliam, R, Sealy, BJ, Collart, EJH, Gennaro, S, Giubertoni, D, Bersani, M and Barozzi, M (2006) Junction stability of B doped layers in SOI formed with optimized vacancy engineering implants Ion Implantation Technology, 866. pp. 84-87.

Sealy, BJ, Smith, AJ, Alzanki, T, Bennett, N, Li, L, Jeynes, C, Colombeau, B, Collart, EJH, Emerson, NG, Gwilliam, RM and Cowern, NEB (2006) Shallow junctions in silicon via low thermal budget processing Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06. pp. 10-15.

Conference or Workshop Item

Ferri, M, Solmi, S, Giubertoni, D, Bersani, M, Hamilton, JJ, Kah, M, Cowern, NEB, Kirkby, K and Collart, EJH (2007) Boron pile-up phenomena during ultra shallow junction formation

Hamilton, JJ, Collart, EJH, Colombeau, B, Bersani, M, Giubertoni, D, Kah, M, Cowern, NEB and Kirkby, KJ (2006) Effect of B dose and Ge prearnorphization energy on the electrical and structural properties of ultrashallow junctions in silicon-on-insulator In: Symposium on Sub Second Rapid Thermal Processing for Device Fabrication held at the 2006 MRS Spring Meeting, 2006-04-18 - 2006-04-19, San Francisco, CA.

Hamilton, JJ, Collart, EJH, Bersani, M, Giubertoni, D, Gennaro, S, Bennett, NS, Cowern, NEB and Kirkby, KJ (2006) Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in Silicon-on-insulator In: 16th International Conference on Ion Implantation Technology, 2006-06-11 - 2006-06-16, Marseille, FRANCE.

Hamilton, JJ, Collart, EJH, Colombeau, B, Jeynes, C, Bersani, M, Giubertoni, D, Sharp, JA, Cowern, NEB and Kirkby, KJ (2005) Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI In: 15th International Conference on Ion Implantation Technology, 2004-10-25 - 2004-10-27, Taipei, TAIWAN.

Cowern, NEB, Smith, AJ, Colombeau, B, Gwilliam, R, Sealy, BJ and Collart, EJH (2005) Understanding, modeling and optimizing vacancy engineering for stable highly boron-doped ultrashallow junctions In: IEEE International Electron Devices Meeting, 2005-12-05 - 2005-12-07, Washington, DC.

Smith, A J, Colombeau, B, Gwilliam, R, Collart, E, Cowern, N E B and Sealy, B J (2004) Doping and Mobility Profiles in Defect-Engineered Ultra-Shallow Junctions: Bulk and SOI

Zurrug, H, Mefo, J, Sealy, B, Boudreault, G, Jeynes, C, Webb, RP, Kirkby, KJ, Collart, EJH, Brown, B, Alford, TL, Nastasi, M and Vella, MC (2003) Characterization and enviromental impact of plasma products within an ion implanter In: 14th International Conference on Ion Implantation Technology, 2002-09-18 - 2002-09-27, TAOS, NM.

Gennaro, S, Sealy, BJ, Jeynes, C, Gwilliam, R, Collart, EJH and Licciardello, A (2003) Effects of carbon content and annealing conditions on the electrical activation of indium implanted silicon In: 14th International Conference on Ion Implantation Technology, 2002-09-18 - 2002-09-27, TAOS, NM.

Mefo, J, Kirkby, KJ, Sealy, BJ, Boudreault, G, Jeynes, C and Collart, EJH (2003) Elemental analysis of residual deposits in an ion implanter using IBA techniques In: 14th International Conference on Ion Implantation Technology, 2002-09-18 - 2002-09-27, TAOS, NM.

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