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Items where Author is "Boudreault, G"

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Ilori, OO, Osasona, O, Eleruja, MA, Egharevba, GO, Adegboyega, GA, Chiodelli, G, Boudreault, G, Jeynes, C and Ajayi, EOB (2005) Preparation and characterization of metallorganic chemical vapour deposited molybdenum (II) oxide (MoO) thin films THIN SOLID FILMS, 472 (1-2). pp. 84-89.

Ilori, OO, Osasona, O, Eleruja, MA, Egharevba, GO, Adegboyega, GA, Chiodelli, G, Boudreault, G, Jeynes, C and Ajayi, EOB (2005) Preparation and characterization of metallorganic chemical vapour deposited LixMoyOz using a single source solid precursor IONICS, 11 (5-6). pp. 387-392.

Boudreault, G, Elliman, RG, Grotzschel, R, Gujrathi, SC, Jeynes, C, Lennard, WN, Rauhala, E, Sajavaara, T, Timmers, H, Wang, YQ and Weijers, TDM (2004) Round Robin: measurement of H implantation distributions in Si by elastic recoil detection NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 222 (3-4). pp. 547-566.

Boudreault, G, Claudio, G, Jeynes, C, Low, R and Sealy, BJ (2004) Accurate calibration of the retained fluence from a versatile single wafer implanter using RBS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 217 (1). pp. 177-182.

Jeynes, C, Barradas, NP, Marriott, PK, Boudreault, G, Jenkin, M, Wendler, E and Webb, RP (2003) Elemental thin film depth profiles by ion beam analysis using simulated annealing - a new tool JOURNAL OF PHYSICS D-APPLIED PHYSICS, 36 (7), PII S0. R97-R126.

Webb, RP, Winston, SH, Gwilliam, RM, Sealy, BJ, Boudreault, G, Jeynes, C and Kirkby, KJ (2003) Comparison of boron halide, decaborane and B implants in Si from molecular dynamics simulations In: 6th International Conference on Computer Simulation of Radiation Effects in Solids, 2002-06-23 - 2002-06-27, DRESDEN, GERMANY.

Peng, N, Shao, G, Jeynes, C, Webb, RP, Gwilliam, RM, Boudreault, G, Astill, DM and Liang, WY (2003) Ion beam synthesis of superconducting MgB2 thin films APPLIED PHYSICS LETTERS, 82 (2). pp. 236-238.

Claudio, G, Boudreault, G, Jeynes, C, Sealy, BJ, Low, R, Brown, B, Alford, TL, Nastasi, M and Vella, MC (2003) Absolute dose performance of the SWIFT single wafer ion implanter In: 14th International Conference on Ion Implantation Technology, 2002-09-18 - 2002-09-27, TAOS, NM.

Zurrug, H, Mefo, J, Sealy, B, Boudreault, G, Jeynes, C, Webb, RP, Kirkby, KJ, Collart, EJH, Brown, B, Alford, TL, Nastasi, M and Vella, MC (2003) Characterization and enviromental impact of plasma products within an ion implanter In: 14th International Conference on Ion Implantation Technology, 2002-09-18 - 2002-09-27, TAOS, NM.

Mefo, J, Kirkby, KJ, Sealy, BJ, Boudreault, G, Jeynes, C and Collart, EJH (2003) Elemental analysis of residual deposits in an ion implanter using IBA techniques In: 14th International Conference on Ion Implantation Technology, 2002-09-18 - 2002-09-27, TAOS, NM.

Winston, SH, Gwilliam, RM, Sealy, BJ, Boudreault, G, Jeynes, C, Webb, RP and Kirkby, KJ (2003) Evaluation of the Boron activation and depth distribution using BBr2+ implants In: 14th International Conference on Ion Implantation Technology, 2002-09-18 - 2002-09-27, TAOS, NM.

Boudreault, G, Jeynes, C, Wendler, E, Nejim, A, Webb, RP and Watjen, U (2002) Accurate RBS measurement of ion implant doses in a silicon SURFACE AND INTERFACE ANALYSIS, 33 (6). pp. 478-486.

Boudreault, Ghislain. (2002) Accurate ion beam analysis. Doctoral thesis, University of Surrey (United Kingdom)..

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