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Items where Author is "Booker, G. R."

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Jianqing, Wen, Evans-Freeman, J., Peaker, A. R., Zhang, J. P., Hemment, Peter L. F., Marsh, C. D. and Booker, G. R. (2000) Role of oxygen on the implantation related residual defects in silicon IEEE Proceedings of Electron Devices Meeting, Hong Kong, 2000.. pp. 112-115.

Giles, L. F., Nejim, A., Marsh, C. D., Hemment, P. L. F. and Booker, G. R. (1993) Formation of oxidation induced stacking sacrificial thinning of SIMOX materials Proceedings of the 1993 International SOI Conference. pp. 54-55.

Marsh, C. D., Booker, G. R., Nejim, A., Giles, L. F., Hemment, P. L. F., Li, Y., Chater, R. J., Kilner, J. A., Wainwright, S. and Hall, S. (1992) Identification of Optimal Doses for Device Quality Thin-Film and Standard Simox Structures Formed by Low (50keV, 70keV or 90keV) or High (200keV) Energy Oxygen Implantation Proceedings of the 1992 International SOI Conference. pp. 6-8.

Robinson, A. K., Reeson, K. J. , Hemment, P. L. F., Thomas, N., Davis, J. R., Christensen, K. N., Marsh, C., Booker, G. R., Kilner, J. A. and Chater, R. J. (1988) Total dielectric isolation (TDI) of silicon device islands by a single O+implantation stage IEEE Proceedings of the 1988 SOS/SOI Technology Workshop .

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